The invention discloses an ultra wide band amplifier circuit employing an inductance counteracting technology. The ultra wide band amplifier circuit comprises an active bias circuit, an inductance counteracting element, a power supply VDD and a cascade structure formed by stacking two transistors. The active bias circuit is connected with the power supply VDD. The inductance counteracting elementcomprises an inductor L2 and the inductor L3. The two transistors in the cascade structure comprise a transistor M1 and the transistor M2. A source of the transistor M1 is grounded through the inductor L2. A gate of the transistor M1 is connected with a resistor R1 and then a gate voltage is input. The source of the transistor M2 is connected with a drain of the transistor M1. The gate of the transistor M2 is grounded through a capacitor C2. The gate of the transistor M2 is connected with a resistor R3 in series and then the gate voltage is input. The drain of the transistor M3 is connected with the inductor L3 in series and then is connected with the active bias circuit. According to the ultra wide band amplifier circuit, a working frequency covers from MHz to GHz, a bandwidth is equal tothat of a distributed amplifier, and the gain performance, power consumption, a chip area and the like of the unit circuit are superior to those of a distributed structure.