
基本信息:
- 专利标题: 基于3N+3开关级联的多端口能馈型高压变换器及控制方法
- 专利标题(英):(3N+3) switched cascaded based multi-port energy-feedback high-voltage converter and control method thereof
- 申请号:CN201710862326.9 申请日:2017-09-21
- 公开(公告)号:CN107612341A 公开(公告)日:2018-01-19
- 发明人: 刘飞 , 王盼 , 查晓明 , 宫金武 , 庄一展 , 陈超 , 俞天毅
- 申请人: 武汉大学
- 申请人地址: 湖北省武汉市武昌区珞珈山武汉大学
- 专利权人: 武汉大学
- 当前专利权人: 武汉大学
- 当前专利权人地址: 湖北省武汉市武昌区珞珈山武汉大学
- 代理机构: 武汉科皓知识产权代理事务所
- 代理人: 张火春
- 主分类号: H02M3/335
- IPC分类号: H02M3/335 ; H02M7/797 ; H02P27/08 ; H02P5/74
The invention discloses a (3N+3) switched cascaded based multi-port energy-feedback high-voltage converter and a control method thereof. The multi-port energy-feedback high-voltage converter is formedby cascading a plurality of (3N+3) switch units, each (3N+3) switch unit comprises a three-phase bridge-type pulse width modulation (PWM) rectifier, a DC-side capacitor and a (3N+3) switch converter,N three-phase output ports are formed in the (3N+3) switch converter and are sequentially recorded as a port 1, a port 2 until a port N, the multi-port energy-feedback high-voltage converter is formed by cascading the plurality of (3N+3) switch units, the port 1 of the (3N+3) switch converter in each (3N+3) switch unit employs an inductance cascading mode, and the other ports of the (3N+3) switchconverter in each (3N+3) switch unit employ a three-phase transformer cascading mode. By the multi-port energy-feedback high-voltage converter, a plurality of load ports can be provided, regenerationenergy among a multi-port load can be directly utilized, the energy utilization efficiency is improved, the feedback power grid pressure is reduced, and meanwhile, the equipment volume also can be reduced.
IPC结构图谱:
H | 电学 |
--H02 | 发电、变电或配电 |
----H02M | 用于交流和交流之间、交流和直流之间、或直流和直流之间的转换以及用于与电源或类似的供电系统一起使用的设备;直流或交流输入功率至浪涌输出功率的转换;以及它们的控制或调节 |
------H02M3/00 | 直流功率输入变换为直流功率输出 |
--------H02M3/02 | .没有中间变换为交流的 |
----------H02M3/24 | ..用静态变换器的 |
------------H02M3/28 | ...应用有控制极的放电管或有控制极的半导体器件产生中间交流电的 |
--------------H02M3/305 | ....应用需要熄灭装置的闸流管或晶闸管型器件的 |
----------------H02M3/335 | .....仅用半导体器件的 |