基本信息:
- 专利标题： 氮化钛去除用液体组合物和使用其的半导体元件的清洗方法、以及半导体元件的制造方法
- 申请号：CN201580005638.7 申请日：2015-01-23
- 公开(公告)号：CN105981136B 公开(公告)日：2018-09-07
- 发明人： 玉井聪 , 岛田宪司
- 申请人： 三菱瓦斯化学株式会社
- 申请人地址： 日本东京都
- 专利权人： 三菱瓦斯化学株式会社
- 当前专利权人： 三菱瓦斯化学株式会社
- 当前专利权人地址： 日本东京都
- 代理机构： 北京林达刘知识产权代理事务所
- 代理人： 刘新宇; 李茂家
- 优先权： 2014-012364 2014.01.27 JP
- 国际申请： PCT/JP2015/051784 2015.01.23
- 国际公布： WO2015/111684 JA 2015.07.30
- 进入国家日期： 2016-07-22
- 主分类号： H01L21/304
- IPC分类号： H01L21/304 ; C09K13/08 ; C11D1/22 ; C11D1/29 ; C11D1/34 ; C11D1/40 ; C11D1/62 ; C11D1/75 ; C11D1/90 ; C11D1/92 ; C11D3/04 ; C11D3/24 ; C11D3/39 ; C23F11/04 ; H01L21/308
This invention provides a liquid composition that removes titanium nitride from a substrate without corroding tungsten or a low-k interlayer dielectric also present on said substrate. Said liquid composition has a pH between 0 and 4, inclusive, and contains the following: at least one oxidizing agent (A) selected from the group consisting of potassium permanganate, ammonium peroxodisulfate, potassium peroxodisulfate, and sodium peroxodisulfate; a fluorine compound (B); and a tungsten-corrosion preventer (C). The tungsten-corrosion preventer (C) either contains at least two different compounds selected from a group of compounds (C1) consisting of alkylamines, salts thereof, fluoroalkylamines, salts thereof, and the like or contains at least one compound selected from said group of compounds (C1) and at least one compound selected from a group of compounds (C2) consisting of polyoxyalkylene alkylamines, polyoxyalkylene fluoroalkylamines, and the like. The mass concentration of potassium permanganate in the abovementioned oxidizing agent (A) is between 0.001% and 0.1%, inclusive, and the mass concentration of the abovementioned fluorine compound (B) is between 0.01% and 1%, inclusive.
公开/授权文献:
- CN105981136A 氮化钛去除用液体组合物和使用其的半导体元件的清洗方法、以及半导体元件的制造方法 公开/授权日：2016-09-28
IPC结构图谱:
| H | 电学 |
| --H01 | 基本电气元件 |
| ----H01L | 半导体器件；其他类目未包含的电固体器件 |
| ------H01L21/00 | 专门适用于制造或处理半导体或固体器件或其部件的方法或设备 |
| --------H01L21/02 | .半导体器件或其部件的制造或处理 |
| ----------H01L21/027 | ..未在H01L21/18或H01L21/34组中包含的为进一步的光刻工艺在半导体之上制作掩膜 |
| ------------H01L21/18 | ...器件有由周期表第Ⅳ族元素或含有/不含有杂质的AⅢBⅤ族化合物构成的半导体，如掺杂材料 |
| --------------H01L21/26 | ....用波或粒子辐射轰击的 |
| ----------------H01L21/302 | .....改变半导体材料的表面物理特性或形状的，例如腐蚀、抛光、切割 |
| ------------------H01L21/304 | ......机械处理，例如研磨、抛光、切割 |