基本信息:
- 专利标题： 一种用于生长高质量碳化硅晶体的籽晶处理方法
- 专利标题（英）：Seed crystal processing method for growing high-quality silicon carbide crystals
- 申请号：CN201610024961.5 申请日：2016-01-15
- 公开(公告)号：CN105463575A 公开(公告)日：2016-04-06
- 发明人： 刘春俊 , 王波 , 赵宁
- 申请人： 北京天科合达半导体股份有限公司 , 新疆天科合达蓝光半导体有限公司
- 申请人地址： 北京市海淀区中关村东路66号1号楼2005室
- 专利权人： 北京天科合达半导体股份有限公司,新疆天科合达蓝光半导体有限公司
- 当前专利权人： 北京天科合达半导体股份有限公司,新疆天科合达蓝光半导体有限公司
- 当前专利权人地址： 北京市海淀区中关村东路66号1号楼2005室
- 主分类号： C30B29/36
- IPC分类号： C30B29/36 ; C30B23/00
The invention provides a seed crystal processing method for growing high-quality silicon carbide crystals. According to the method, compact silicon carbon yttrium or yttrium carbide film coatings are formed on the back of the growth face of a seed crystal to inhibit back evaporation of the seed crystal, and the high-quality silicon carbide crystals are grown. The distillation process of the backs of the silicon carbide crystals is directly inhibited due to the high temperature resistance of the coatings and the specialty of the material composition, the flat hexagonal defect caused by back evaporation in the crystal growth process is effectively eliminated, the quality of the silicon carbide crystals is greatly improved, and the yield of the silicon carbide crystals is greatly raised.
公开/授权文献:
- CN105463575B 一种用于生长高质量碳化硅晶体的籽晶处理方法 公开/授权日：2019-02-19