基本信息:
- 专利标题： 使用CF4来增强氧自由基产生的自由基增强的原子层沉积
- 专利标题（英）：Radical-enhanced atomic layer deposition using CF4 to enhance oxygen radical generation
- 申请号：CN201510534891.3 申请日：2015-08-27
- 公开(公告)号：CN105386010A 公开(公告)日：2016-03-09
- 发明人： A·W·扎菲罗波洛 , M·J·索瓦
- 申请人： 超科技公司
- 申请人地址： 美国加利福尼亚
- 专利权人： 超科技公司
- 当前专利权人： 超科技公司
- 当前专利权人地址： 美国加利福尼亚
- 代理机构： 中国国际贸易促进委员会专利商标事务所
- 代理人： 李英
- 优先权： 62/042,686 2014.08.27 US
- 主分类号： C23C16/455
- IPC分类号： C23C16/455 ; C23C16/40
A method of performing a radical-enhanced atomic-layer deposition process on a surface of a substrate that resides within an interior of a reactor chamber is disclosed. The method includes forming plasma from a gas mixture consisting of CF4 and O2, wherein the CF4 is present in a concentration in the range from 0.1 vol % to 10 vol %. The plasma formed from the gas mixture generates oxygen radicals O* faster than if there were no CF4 present in the gas mixture. The method also includes feeding the oxygen radicals and a precursor gas sequentially into the interior of the reactor chamber to form an oxide film on the surface of the substrate. A system for performing the radical-enhanced atomic-layer deposition process using the rapidly formed oxygen radicals is also disclosed.