The invention provides a buried-channel SiC trench gate metal oxide semiconductor field effect transistors (MOSFETs) device and a fabrication method thereof. The device comprises an n-type SiC substrate, n-type buried channels, p-type SiC regions, a trench medium, a gate contact, base region contacts, source contacts and a drain contact, wherein an n-type SiC drift layer is arranged on the substrate and internally comprises p<+>-type SiC regions at intervals, and n<+>-type SiC regions are arranged between the p<+>-type SiC regions; the n-type buried channels are arranged between the p<+>-type SiC regions and arranged in the n-type SiC drift layers under the n<+>-type SiC source regions; and the p-type SiC regions are arranged under the n<+>-type SiC source regions, are arranged in the n-type buried channels, and are opposite to the p<+>-type SiC regions. On the basis of a trench gate MOSFET structure, the buried channels provided for source and drain conductive passages are achieved by reversely doping a part of p well regions, the problems of low effective mobility of surface electrons and high threshold voltage are prevented, and a normally-closed device is achieved.