基本信息:
- 专利标题： 借助于等温凝固反应来连接接合配对件以形成In-Bi-Ag连接层的方法和接合配对件的相应装置
- 专利标题（英）：Process for connecting joining partners by means of an isothermic solidifying reaction in order to form an In-Bi-Ag connecting layer and corresponding arrangement of joining partners
- 申请号：CN201480018514.8 申请日：2014-03-24
- 公开(公告)号：CN105103287A 公开(公告)日：2015-11-25
- 发明人： 安德烈亚斯·普洛斯尔
- 申请人： 欧司朗光电半导体有限公司
- 申请人地址： 德国雷根斯堡
- 专利权人： 欧司朗光电半导体有限公司
- 当前专利权人： 欧司朗光电半导体有限公司
- 当前专利权人地址： 德国雷根斯堡
- 代理机构： 北京集佳知识产权代理有限公司
- 代理人： 丁永凡; 李德山
- 优先权： 102013103081.5 2013.03.26 DE
- 国际申请： PCT/EP2014/055848 2014.03.24
- 国际公布： WO2014/154637 DE 2014.10.02
- 进入国家日期： 2015-09-25
- 主分类号： H01L23/62
- IPC分类号： H01L23/62 ; H01L21/60 ; H01L23/488
The invention provides a process for connecting joining partners (1, 2), for example an optoelectronic semiconductor chip (e.g. a light-emitting diode chip) and a printed circuit board or a metallic conductor frame, said process comprising the following steps: - providing a first joining partner (1) and a second joining partner (2), - applying a first layer sequence (10) to the first joining partner (1), which sequence comprises at least one layer (11, 15) containing or consisting of silver, - applying a second layer sequence (20) to the second joining partner (2), said sequence comprising at least one layer (29) containing indium and bismuth or a layer (23) containing indium and a layer (22, 24) containing bismuth, - pressing the first layer sequence (10) and the second layer sequence (20) together at the end faces thereof which are remote respectively from the first joining partner (1) and the second joining partner (2) by applying a joining pressure (p) at a joining temperature which is at most 120 DEG C for a predefined joining time, the first layer sequence (10) and the second layer sequence (20) fusing to form a connecting layer (30) which adjoins the first joining partner and the second joining partner directly and the fusion temperature of which is at least 260 DEG C.
公开/授权文献:
- CN105103287B 借助于等温凝固反应来连接接合配对件以形成In-Bi-Ag 连接层的方法和接合配对件的相应装置 公开/授权日：2018-03-23
IPC结构图谱:
| H | 电学 |
| --H01 | 基本电气元件 |
| ----H01L | 半导体器件；其他类目未包含的电固体器件 |
| ------H01L23/00 | 半导体或其他固态器件的零部件 |
| --------H01L23/552 | .防辐射保护装置，例如光 |
| ----------H01L23/62 | ..防过电流或过电负荷保护装置，例如熔丝、分路器 |