The utility model discloses an n-channel nonvolatile storage element which includes a p-type semiconductor substrate which includes n-type doped source and drain regions and a p-type doped halo injection region between the source and drain regions; and a grid electrode structure which is between the n-type doped source and drain regions on the p-type semiconductor substrate. The grid electrode structure includes a gate oxide layer, a polycrystalline silicon floating gate, an intermediate insulating layer and a control grid electrode. During compiling of the n-channel nonvolatile storage element, through application of a positive grid electrode voltage to the control grid electrode, application of a 0V source electrode voltage to the source region, application of a drain electrode voltage larger than the source electrode voltage to the drain region and application of a positive substrate voltage to the substrate, under the action of the voltage difference of the grid electrode voltage and the source electrode voltage, belt-belt tunneling electrons are generated in areas of the halo injection area, close to the source region and the gate oxide layer. The belt-belt tunneling electrons accelerate under the action of the voltage difference of the substrate voltage and the source electrode voltage and enter the gate oxide layer under the action of the grid electrode voltage. The n-channel nonvolatile storage element is capable of solving a problem of erasure saturation of a p-channel storage device.