
基本信息:
- 专利标题: 一种场终止型IGBT器件的制造方法
- 专利标题(英):Manufacturing method of field stop type IGBT device
- 申请号:CN201310385233.3 申请日:2013-08-30
- 公开(公告)号:CN103594356A 公开(公告)日:2014-02-19
- 发明人: 高文玉 , 刘隽 , 王耀华 , 刘钺杨 , 刘江 , 于坤山 , 张宇 , 包海龙 , 车家杰
- 申请人: 国家电网公司 , 国网智能电网研究院 , 国网上海市电力公司
- 申请人地址: 北京市西城区西长安街86号
- 专利权人: 国家电网公司,国网智能电网研究院,国网上海市电力公司
- 当前专利权人: 国家电网公司,国网智能电网研究院,国网上海市电力公司
- 当前专利权人地址: 北京市西城区西长安街86号
- 代理机构: 北京安博达知识产权代理有限公司
- 代理人: 徐国文
- 主分类号: H01L21/331
- IPC分类号: H01L21/331
The invention relates to a manufacturing method of the semiconductor device technology field and particularly relates to a manufacturing method of a field stop type IGBT device. The method comprises steps that an N type coped FZ monocrystalline wafer is selected, thickness is determined according to a voltage grade; ion implantation of phosphor impurity is carried out at a back face of the monocrystalline wafer, and high temperature annealing is carried out to form an N type doped buffer layer with thickness of 15-70um and doped concentration of 2*1013-2*1015/cm<3>; a protection layer at the back face is corroded, roughening at the back face is carried out by employing a corrosion or sandblast method to form a gettering source; a protection layer at a front face is removed, manufacturing of an IGBT cellular region is carried out at the front face of the monocrystalline wafer; the back face of the monocrystalline wafer is grinded to form a silicon substrate with thickness of 5-30um, the back face is further corroded at thickness about 2um, and the N type buffer layer with thickness of 10-65um is left as a field stop region; manufacturing of a collector electrode region is realized. According to the manufacturing method, the field stop region with thickness of 10-65um can be formed without any expensive high energy ion implantation equipment or external equipment, and the method is applicable to manufacturing of a 1700-6500V field stop type IGBT device.
公开/授权文献:
- CN103594356B 一种场终止型IGBT器件的制造方法 公开/授权日:2017-10-17
IPC结构图谱:
H | 电学 |
--H01 | 基本电气元件 |
----H01L | 半导体器件;其他类目未包含的电固体器件 |
------H01L21/00 | 专门适用于制造或处理半导体或固体器件或其部件的方法或设备 |
--------H01L21/02 | .半导体器件或其部件的制造或处理 |
----------H01L21/027 | ..未在H01L21/18或H01L21/34组中包含的为进一步的光刻工艺在半导体之上制作掩膜 |
------------H01L21/18 | ...器件有由周期表第Ⅳ族元素或含有/不含有杂质的AⅢBⅤ族化合物构成的半导体,如掺杂材料 |
--------------H01L21/26 | ....用波或粒子辐射轰击的 |
----------------H01L21/33 | .....包括3个或更多电极的器件 |
------------------H01L21/331 | ......晶体管 |