The invention relates to a manufacturing method of the semiconductor device technology field and particularly relates to a manufacturing method of a field stop type IGBT device. The method comprises steps that an N type coped FZ monocrystalline wafer is selected, thickness is determined according to a voltage grade; ion implantation of phosphor impurity is carried out at a back face of the monocrystalline wafer, and high temperature annealing is carried out to form an N type doped buffer layer with thickness of 15-70um and doped concentration of 2*1013-2*1015/cm<3>; a protection layer at the back face is corroded, roughening at the back face is carried out by employing a corrosion or sandblast method to form a gettering source; a protection layer at a front face is removed, manufacturing of an IGBT cellular region is carried out at the front face of the monocrystalline wafer; the back face of the monocrystalline wafer is grinded to form a silicon substrate with thickness of 5-30um, the back face is further corroded at thickness about 2um, and the N type buffer layer with thickness of 10-65um is left as a field stop region; manufacturing of a collector electrode region is realized. According to the manufacturing method, the field stop region with thickness of 10-65um can be formed without any expensive high energy ion implantation equipment or external equipment, and the method is applicable to manufacturing of a 1700-6500V field stop type IGBT device.