The present invention provides a semiconductor device and a method of manufacturing the same. A method of manufacturing a semiconductor device includes: forming a first electrode on a first semiconductor substrate; coating the semiconductor substrate with an insulating material having a first viscosity at a first temperature, having a second viscosity lower than the first viscosity at a second temperature higher than the first temperature, and having a third viscosity higher than the second viscosity at a third temperature higher than the second temperature; and forming a first insulating film by curing the insulating material. In this method, the forming the first insulating film includes: bringing the insulating material to the second viscosity by heating the insulating material under a first condition; and bringing the insulating material to the third viscosity by heating the insulating material under a second condition. The first condition and the second condition are different in their temperature rising rate. According to the semiconductor device, the bottom of each projected part is provided with a thick passive film for reducing damage.