The invention discloses a manufacturing method of a device for heating before testing a silicon wafer. The manufacturing method comprises the following steps: at first, a portal heating frame made of glass is set up above a traveling arm in front of a tested black box, wherein an electric wire hole is drilled in the top of the heating frame, a thermal radiation film is laid on the outer side of the top of the heating frame; then, an infrared heating lamp is mounted at the top of the heating frame, and an infrared heating lamp power cord penetrates from the electric wire hole in the top of the heating frame and is connected with the infrared heating lamp; at last, a heating switch is mounted on the outer side of the heating frame. When a to-be-tested silicon wafer is conveyed, the infrared heating lamp is turned on, and the surface temperature of the to-be-tested silicon wafer is increased through infrared light radiation and heat transfer, so that the to-be-tested silicon wafer meets the temperature requirement in testing, which avoids the condition that the temperature is adjusted through turning-on of an air conditioner, the energy consumption is reduced, and the heating device is convenient to refit, and is low in cost.