基本信息:
- 专利标题： 具备具有二极管区和绝缘栅双极性晶体管区的半导体基板的半导体装置
- 专利标题（英）：Semiconductor device provided with semiconductor substrate having diode region and Igbt region
- 申请号：CN201080065840.6 申请日：2010-04-02
- 公开(公告)号：CN102822968A 公开(公告)日：2012-12-12
- 发明人： 岩崎真也 , 添野明高
- 申请人： 丰田自动车株式会社
- 申请人地址： 日本爱知县
- 专利权人： 丰田自动车株式会社
- 当前专利权人： 株式会社电装
- 当前专利权人地址： 日本爱知县
- 代理机构： 北京金信立方知识产权代理有限公司
- 代理人： 黄威; 苏萌萌
- 国际申请： PCT/JP2010/056094 2010.04.02
- 国际公布： WO2011/125156 JA 2011.10.13
- 进入国家日期： 2012-09-26
- 主分类号： H01L27/04
- IPC分类号： H01L27/04 ; H01L21/265 ; H01L21/322 ; H01L21/336 ; H01L21/76 ; H01L29/739 ; H01L29/78
Disclosed is a semiconductor device wherein a diode region and an IGBT region are formed on the same semiconductor substrate, carrier transfer between the IGBT region and the diode region is suppressed, an increase of an on-voltage when the IGBT is operated is suppressed, and recovery characteristics of a diode are improved. The semiconductor device has the diode region (20) and the IGBT region (40) formed on the same semiconductor substrate, and on the rear surface side of the semiconductor substrate, a low-concentration region (100) is provided between a second conductivity type cathode region (30) in the diode region, and a first conductivity type collector region (52) in the IGBT region. The low concentration region (100) has a first conductivity type first low concentration region, which has a lower concentration of a first conductivity type impurity compared with the collector region, or a second conductivity type second low concentration region, which has a lower concentration of a second conductivity type impurity compared with the cathode region.
公开/授权文献:
- CN102822968B 具备具有二极管区和绝缘栅双极性晶体管区的半导体基板的半导体装置 公开/授权日：2016-08-03