
基本信息:
- 专利标题: 一种高纯硅溶胶的纯化方法
- 专利标题(英):Purifying method for high-purity silica sol
- 申请号:CN201210018145.5 申请日:2012-01-19
- 公开(公告)号:CN102583406A 公开(公告)日:2012-07-18
- 发明人: 顾忠华 , 高源 , 龚桦 , 邹春莉 , 潘国顺
- 申请人: 深圳市力合材料有限公司 , 清华大学 , 深圳清华大学研究院
- 申请人地址: 广东省深圳市南山区西丽南岗第二工业园九栋一楼
- 专利权人: 深圳市力合材料有限公司,清华大学,深圳清华大学研究院
- 当前专利权人: 深圳市力合材料有限公司,清华大学,深圳清华大学研究院
- 当前专利权人地址: 广东省深圳市南山区西丽南岗第二工业园九栋一楼
- 代理机构: 北京众合诚成知识产权代理有限公司
- 代理人: 薄观玖
- 主分类号: C01B33/14
- IPC分类号: C01B33/14
The invention discloses a purifying method of a high-purity silica gel, belonging to the technical field of chemical-mechanical polishing. The purifying method is suitable for purifying silica sol in the chemical-mechanical polishing of a super-large-scale integrated circuit. The purifying method comprises the following steps: uniformly mixing regenerated strong acid cation exchange resin with strong base type anion exchange resin; adding silica sol to be purified in a container filled with strong acid and strong base mixed resin and controlling the temperature, stirring to enable the silica sol to be purified and the strong acid and strong base mixed resin to be mixed uniformly and realizing dynamic purification; and adding a composite chelating agent and a flocculating agent in the dynamic purifying process of the silica sol and controlling the pH value to 1-5 to obtain the purified silica sol. The content of metal ions in the purified silica sol is reduced to ppb level; and the obtained high-purity silica sol can meet the requirement of a substrate or a chip polishing solution for new generation of line width on the purity of the silica sol.
公开/授权文献:
- CN102583406B 一种高纯硅溶胶的纯化方法 公开/授权日:2014-03-19
IPC结构图谱:
C | 化学;冶金 |
--C01 | 无机化学 |
----C01B | 非金属元素;其化合物 |
------C01B33/00 | 硅;其化合物 |
--------C01B33/08 | .含卤素的化合物 |
----------C01B33/12 | ..硅石;其水合物,如勒皮硅酸 |
------------C01B33/14 | ...胶体硅石,如分散体、凝胶、溶胶 |