基本信息:
- 专利标题： 半导体元件及其制法
- 专利标题（英）：Semiconductor device and a manufacturing method thereof
- 申请号：CN200910151365.3 申请日：2009-07-02
- 公开(公告)号：CN101819976A 公开(公告)日：2010-09-01
- 发明人： 庄学理 , 李宗吉 , 郑光茗 , 钟昇镇 , 梁孟松
- 申请人： 台湾积体电路制造股份有限公司
- 申请人地址： 中国台湾新竹市
- 专利权人： 台湾积体电路制造股份有限公司
- 当前专利权人： 台湾积体电路制造股份有限公司
- 当前专利权人地址： 中国台湾新竹市
- 代理机构： 隆天国际知识产权代理有限公司
- 代理人： 姜燕; 陈晨
- 优先权： 61/078,149 2008.07.03 US; 12/256,132 2008.10.22 US
- 主分类号： H01L27/105
- IPC分类号： H01L27/105 ; H01L29/92 ; H01L21/8232 ; H01L21/28
The invention provides a semiconductor device and a manufacturing method thereof. The semiconductor device is provided which includes a semiconductor substrate having a first region and a second region, transistors having metal gates formed in the first region, and at least one capacitor formed in the second region. The capacitor includes a top electrode having at least one stopping structure formed in the top electrode, the at least one stopping structure being of a different material from the top electrode, a bottom electrode, and a dielectric layer interposed between the top electrode and the bottom electrode. The invention may help prevent or reduce the risk of over-polishing or dishing on the top metal electrode by the metal CMP process (ILD CMP or metal CMP). The polishing stopping structure may be formed in the same process as the process that forms the gate structure, and thus the device and methods disclosed herein do not require additional processing steps and/or added complexity and costs associated with processing steps already in use.
公开/授权文献:
- CN101819976B 半导体元件及其制法 公开/授权日：2012-02-01
IPC结构图谱:
| H | 电学 |
| --H01 | 基本电气元件 |
| ----H01L | 半导体器件；其他类目未包含的电固体器件 |
| ------H01L27/00 | 由在一个共用衬底内或其上形成的多个半导体或其他固态组件组成的器件 |
| --------H01L27/02 | .包括有专门适用于整流、振荡、放大或切换的半导体组件并且至少有一个电位跃变势垒或者表面势垒的；包括至少有一个跃变势垒或者表面势垒的无源集成电路单元的 |
| ----------H01L27/04 | ..其衬底为半导体的 |
| ------------H01L27/06 | ...在非重复结构中包括有多个单个组件的 |
| --------------H01L27/105 | ....包含场效应组件的 |