基本信息:
- 专利标题： Semiconductor device and fabrication method therefor
- 申请号：AU4279301 申请日：2001-03-27
- 公开(公告)号：AU4279301A 公开(公告)日：2001-10-30
- 发明人： SUGA TADATOMO , SAIJO KINJI , OHSAWA SHINJI , OKAMOTO HIROAKI , YOSHIDA KAZUO
- 申请人： TOYO KOHAN CO LTD , TADATOMO SUGA
- 专利权人： TOYO KOHAN CO LTD,TADATOMO SUGA
- 当前专利权人： TOYO KOHAN CO LTD,TADATOMO SUGA
- 优先权： JP2000118227 2000-04-19
- 主分类号： H01L23/52
- IPC分类号： H01L23/52 ; H01L21/283 ; H01L21/288 ; H01L21/3205 ; H01L21/60 ; H01L21/768 ; H01L23/31 ; H01L23/485 ; H01L21/3213
摘要：
A method of efficiently and inexpensively fabricating a chip-size package having an electrode pitch expanded by forming a conductor wiring on the electrode forming surface side of a semiconductor chip, especially, a method for facilitating wiring and bump forming. A semiconductor device comprising a semi-conductor elements and conductor wirings formed on the semiconductor elements by etching wiring-forming metal foil; and a fabrication method for a semiconductor device comprising the steps of laminating wiring forming metal foil on the electrode forming surface side on the semiconductor, forming a resist wiring pattern on the metal foil, etching the metal foil, and slicing the device into individual elements.
信息查询:
EspacenetIPC结构图谱:
| H | 电学 |
| --H01 | 基本电气元件 |
| ----H01L | 半导体器件；其他类目未包含的电固体器件 |
| ------H01L23/00 | 半导体或其他固态器件的零部件 |
| --------H01L23/52 | .用于在处于工作中的器件内部从一个组件向另一个组件通电的装置 |