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    • 2. 发明申请
    • CEMENTED CARBIDE AND PROCESS FOR PRODUCING SAME
    • 碳化硅和其生产方法
    • US20120210822A1
    • 2012-08-23
    • US13500072
    • 2010-11-15
    • Igor Yuri KonyashinBernd Heinrich RiesFrank Friedrich Lachmann
    • Igor Yuri KonyashinBernd Heinrich RiesFrank Friedrich Lachmann
    • C22C1/05C22C29/08B82Y30/00
    • C22C29/08C22C1/051
    • The present invention relates to a cemented carbide comprising WC grains, 3-20 wt. % binder selected from Co or Co and Ni and grain growth inhibitors wherein the WC mean grain size lies in the range of 180 nm and 230 nm, at least 10±2% WC grains are finer than 50 nm and 7±2% WC grains have a size from 50 to 100 nm. The invention further relates to a process for production the cemented carbide including the stages of milling WC powder with specific surface area (BET) of 3.0 m2/g or higher with binder and grain-growth inhibitors; pressing green parts; pre-sintering the green parts in H2 at 400° C. to 900° C. for 5 to 30 min; sintering in vacuum at temperatures of 1340° C. to 1410° C. for 3 min to 20 min; and HIP-sintering in Ar at pressures of 40 to 100 bar at temperatures of 1340° C. to 1410° C. for 1 to 20 min
    • 本发明涉及包含WC颗粒的硬质合金,3-20wt。 选自Co或Co和Ni的%粘合剂和晶粒生长抑制剂,其中WC平均晶粒尺寸在180nm和230nm的范围内,至少10±2%的WC晶粒比50nm更精细,7±2%的WC晶粒 具有50至100nm的尺寸。 本发明还涉及一种用于生产硬质合金的方法,其包括用粘合剂和晶粒生长抑制剂研磨比表面积(BET)为3.0m 2 / g或更高的WC粉末的阶段; 压绿色部分; 将H 2中的绿色部分在400℃〜900℃预烧5〜30分钟; 在1340℃至1410℃的温度下真空烧结3分钟至20分钟; 并在Ar压力为40〜100bar,温度1340℃〜1410℃下进行HIP烧结1〜20分钟