专利快速检索-快速检索全球专利，免费商用专利数据库-IPRDB

1. 发明申请

WO2023072754A1 RADIO FREQUENCY SWITCHES WITH FAST SWITCHING SPEED 审中-公开
公开(公告)号：WO2023072754A1
公开(公告)日：2023-05-04
申请号：PCT/EP2022/079387
申请日：2022-10-21
申请人： ANALOG DEVICES INTERNATIONAL UNLIMITED COMPANY
发明人： AVCI, Celal , KAYMAKSUT, Ercan , KAYAHAN, Huseyin
IPC分类号： H03K17/0412 , H03K17/10 , H04B1/44
摘要： Radio frequency switches with improved switching speed are provided. In certain embodiments, an RE switching circuit includes a FET switch including a gate, a digital buffer configured to provide a first output voltage to the gate of the FET during a steady-state, and a fast switching circuit in parallel with the digital buffer and configured to provide a second output voltage to the gate of the FET during a switching state. The fast switching circuit includes at least one charge pump configured to boost at least one supply voltage to a multiple of the at least one supply voltage. The fast switching circuit is configured to generate the second output voltage based on the boosted at least one supply voltage.

2. 发明申请

WO2022129952A1 CIRCUITS INCLUDING HIGH POWER TRANSISTORS 审中-公开
公开(公告)号：WO2022129952A1
公开(公告)日：2022-06-23
申请号：PCT/GB2021/053373
申请日：2021-12-20
申请人： SEARCH FOR THE NEXT LTD
发明人： SUMMERLAND, David , LIGHT, Roger , KNIGHT, Luke
IPC分类号： H03K17/0412 , H03K17/60
摘要： Bipolar Junction Transistors (BJT) operating at high voltages often incorporate a drift region to prevent breakdown. However, the drift region slows the switching time of the transistor, introducing inefficiency as a BJT uses most power whilst switching. Another source of inefficiency is the circuit that drives the BJT which continuously draws current to hold the BJT on and off. There is described a circuit having a controller adapted to operate the driver circuit of the BJT such that within each ON- OFF switching cycle of the BJT, the output of the driver circuit is in the floating state for longer than it is in either the ON or OFF state. In the floating state the driver circuit is not drawing power and so power efficiency is improved. The circuit may include a bypass connection between the base and collector terminals of the BJT. The resistance of the bypass connection is selected to decay charge in the drift region whilst the transistor is ON to reduce the switching time of the BJT.

3. 发明申请

WO2020172660A1 TURN OFF CIRCUIT FOR PROTECTION SWITCH 审中-公开
公开(公告)号：WO2020172660A1
公开(公告)日：2020-08-27
申请号：PCT/US2020/019481
申请日：2020-02-24
申请人： TEXAS INSTRUMENTS INCORPORATED , TEXAS INSTRUMENTS JAPAN LIMITED
发明人： DINA, Marius, Vicentiu
IPC分类号： H02H3/20 , H03K17/0412
摘要： A switch circuit (108) includes: a power transistor (110) having a source coupled to a supply terminal (104), a drain coupled to an output terminal (106), and a gate (131); a bipolar transistor (130) having a collector coupled to the supply terminal (104), an emitter coupled to the gate (131) of the power transistor (110), and a base (132); a bias circuit (133) to control an emitter current of the bipolar transistor (130); and a resistor (138) coupled between the supply terminal (104) and the base (132). A control circuit (139) receives a current at a current input to turn the bipolar transistor (130) on responsive to a control input (128) being in a first state, and ceases receiving the current at the current input to reduce a gate- source voltage of the power transistor (110) responsive to the control input (128) being in a different second state.

4. 发明申请

WO2020139460A1 BOOTSTRAPPED SWITCH CIRCUIT WITH IMPROVED SPEED 审中-公开
公开(公告)号：WO2020139460A1
公开(公告)日：2020-07-02
申请号：PCT/US2019/059232
申请日：2019-10-31
申请人： QUALCOMM INCORPORATED
发明人： SUN, Lei , KIRAN, Ganesh , MIRHAJ, Seyed Arash
IPC分类号： G11C27/02 , H03K17/0412 , H03K17/06
摘要： A bootstrapped switch circuit includes an auxiliary loop circuit for assisting the boosting of a bootstrap voltage in a main loop circuit having a bootstrapped switch transistor. The boosted bootstrap voltage switches on the bootstrapped switch transistor so that an input voltage signal may conduct through the bootstrapped switch transistor to charge a sampling node.

5. 发明申请

WO2019118098A1 HIGH-VOLTAGE, HIGH-SPEED GAN DRIVER CIRCUIT 审中-公开
公开(公告)号：WO2019118098A1
公开(公告)日：2019-06-20
申请号：PCT/US2018/059593
申请日：2018-11-07
申请人： NORTHROP GRUMMAN SYSTEMS CORPORATION
发明人： RODGERS, Paul, L. , LAROCCA, Timothy, R.
IPC分类号： H03F1/42 , H03F3/193 , H03K17/0412
摘要： A high-voltage, high-speed driver circuit that includes a source amplifier having an amplifying FET device with a drain terminal, a gate terminal and a source terminal, where the amplifying FET device receiving a control signal at its gate terminal and outputs an amplified control signal at its drain terminal. The driver circuit also includes an active load having a self- biasing load FET device with a drain terminal, a gate terminal and a source terminal, where the drain terminal of the load FET device is coupled to a power supply, the source terminal of the load FET device is coupled to the drain terminal of the amplifying FET device, and the source and gate terminals of the load FET device are electrically coupled together by a self- biasing line. The active load includes a load resistor provided within the self- biasing line that provides high impedance and low capacitance.

6. 发明申请

WO2014062781A1 INCREASED TRANSITION SPEED DEVICE DRIVER 审中-公开
标题翻译：增加的转换速度设备驱动程序
公开(公告)号：WO2014062781A1
公开(公告)日：2014-04-24
申请号：PCT/US2013/065206
申请日：2013-10-16
申请人： CREE, INC.
发明人： CALLANAN, Robert, J.
IPC分类号： H03K17/0412 , H01L29/16
CPC分类号： H03K17/04123 , H01L29/1608 , H03K17/04126
摘要： A switching device driver, which includes switching circuitry and a first capacitive element, which is coupled to the switching circuitry, is disclosed. The switching circuitry receives a logic level input signal and provides a switching control output signal to a switching device based on the logic level input signal. When the logic level input signal has a first logic level, the switching circuitry charges the first capacitive element. When the logic level input signal transitions from the first logic level to a second logic level, the switching circuitry at least partially discharges the first capacitive element to rapidly transition the switching control output signal, thereby causing the switching device to quickly change states.
摘要翻译：公开了一种开关装置驱动器，其包括耦合到开关电路的开关电路和第一电容元件。开关电路接收逻辑电平输入信号，并且基于逻辑电平输入信号向开关器件提供开关控制输出信号。当逻辑电平输入信号具有第一逻辑电平时，开关电路对第一电容元件充电。当逻辑电平输入信号从第一逻辑电平转换到第二逻辑电平时，开关电路至少部分地放电第一电容元件以快速地转换开关控制输出信号，从而使开关器件快速地改变状态。

7. 发明申请

WO2012048901A8 METHOD FOR SWITCHING A NORMALLY ON FIELD EFFECT TRANSISTOR 审中-公开
标题翻译：开关自引导场效应晶体管的方法
公开(公告)号：WO2012048901A8
公开(公告)日：2012-07-12
申请号：PCT/EP2011005180
申请日：2011-10-14
申请人： MICROGAN GMBH , SOENMEZ ERTUGRUL , KUNZE MIKE , DAUMILLER INGO
发明人： SOENMEZ ERTUGRUL , KUNZE MIKE , DAUMILLER INGO
IPC分类号： H01L29/778 , H01L29/20 , H03K17/0412 , H03K17/687
CPC分类号： H01L29/7786 , H01L29/2003 , H03K17/0412
摘要： The invention relates to a method for switching a normally on field effect transistor, wherein a gate voltage with a negative sign, the magnitude of which is greater than a threshold voltage of the transistor, is applied in order to switch off the transistor, and wherein the gate voltage with the negative sign is switched off in order to switch on the transistor, and wherein the transistor is kept in the switched-on state without applying a gate voltage.
摘要翻译：本发明涉及一种方法，用于切换自导通的场效应晶体管，其中栅极电压与负号来关闭晶体管，其量低于晶体管的阈值电压更大的应用，并且其中所述晶体管的开关关断，用负号的栅极电压被保持，并且其中晶体管保持导通状态而不施加栅极电压。

8. 发明申请

WO02075924A3 CIRCUIT AND METHOD FOR CONTROLLING A DYNAMIC, BI-DIRECTIONAL HIGH VOLTAGE ANALOG SWITCH AND ULTRASOUND EXAMINATION APPARATUS EQUIPPED WITH SUCH A CIRCUIT 审中-公开
标题翻译：用于控制动态，双向高电压模拟开关的电路和方法以及配备这种电路的超声波检查装置
公开(公告)号：WO02075924A3
公开(公告)日：2002-12-27
申请号：PCT/IB0200825
申请日：2002-03-18
申请人： KONINKL PHILIPS ELECTRONICS NV
发明人： DUFORT BENOIT
IPC分类号： H03K17/00 , H03F3/34 , H03K17/0412 , H03K17/06 , H03K17/687 , A61B8/00
CPC分类号： H03K17/063 , H03K17/04123 , H03K17/6874
摘要： A circuit and method for controlling a switch is provided. Specifically, the circuit and method of the present invention provide a level shifter (12) that controls a dynamic, bi-directional high voltage analog switch (14). The level shifter generally includes transistors, input terminals, a voltage source, a high negative voltage source, and a diode. The configuration of the level shifter, inter alia, allows the switch to be kept ON without a current/signal, prevents dissipation of transistors of the level shifter, and provides constant gate-to-source voltage on the switch transistors for improved linearity. The circuit is advantageously used in a scanhead connected to an ultrasound examination apparatus.
摘要翻译：提供了一种用于控制开关的电路和方法。具体地，本发明的电路和方法提供一种控制动态双向高压模拟开关（14）的电平转换器（12）。电平移位器通常包括晶体管，输入端子，电压源，高负电压源和二极管。电平移位器的配置尤其允许开关保持导通而不需要电流/信号，防止电平移位器的晶体管损耗，并且在开关晶体管上提供恒定的栅极 - 源极电压以提高线性度。该电路有利地用于连接到超声检查装置的扫描头中。

9. 发明申请

WO02058218A2 THREE TERMINAL NONINVERTING TRANSISTOR SWITCH BACKGROUND OF THE INVENTION 审中-公开
标题翻译：三端子非开关晶体管开关背景技术
公开(公告)号：WO02058218A2
公开(公告)日：2002-07-25
申请号：PCT/US2002/001352
申请日：2002-01-18
IPC分类号： H01L27/04 , H01L21/822 , H03K17/00 , H03K17/0412 , H03K17/16 , H03K17/687 , H02M
CPC分类号： H03K17/04123 , H03K17/687 , H03K2217/0036
摘要： A noninverting transistor switch having only a first terminal (113), a second terminal (115) and third terminal (117) includes a transistor (125) connected to the second and third terminals, the transistor having an on switching state in which current is able to pass between the second and third terminals and an off switching state in which current is interrupted from passing between the second and third terminals. The transistor switch also includes a voltage stabilizer (123) connected to the second and third terminals. The transistor switch further includes a CMOS inverter (119, 121) connected to the first terminal, the second terminal, the transistor and the voltage stabilizer. In use, the CMOS inverter interrupts the passing of current between the voltage stabilizer and the second terminal when the transistor is in its off switching state.
摘要翻译：具有只有第一端子（113），第二端子（115）和第三端子（117）的同相晶体管开关包括连接到第二和第三端子的晶体管（125），晶体管具有开路状态，其中电流是能够在第二和第三端子之间通过，并且断开开关状态，其中电流在第二和第三端子之间中断。晶体管开关还包括连接到第二和第三端子的稳压器（123）。晶体管开关还包括连接到第一端子，第二端子，晶体管和稳压器的CMOS反相器（119,121）。在使用中，当晶体管处于截止状态时，CMOS反相器中断电压稳定器与第二端子之间的电流通过。

10. 发明申请

WO00033380A1 CONTROLLABLE SEMICONDUCTOR ELEMENT WITH A GATE SERIES RESISTOR 审中-公开
标题翻译：与栅电阻可控半导体元件
公开(公告)号：WO00033380A1
公开(公告)日：2000-06-08
申请号：PCT/DE1998/003562
申请日：1998-12-03
IPC分类号： H01L27/06 , H01L27/07 , H01L29/739 , H03K17/0412 , H03K17/0812 , H01L27/02 , H03K17/082
CPC分类号： H01L27/0652 , H01L27/0716 , H01L29/7397 , H03K17/0412 , H03K17/08128 , H03K17/163 , H03K17/74
摘要： Disclosed is a device comprising a controllable semiconductor element (1) consisting of at least two doping areas (3,4) embedded in a semiconductor substrate (2) and at least one gate electrode (3,4) for the control of said semiconductor element, in addition to a conductive feeder (7) for the gate electrode (5). A resistance circuit, comprising at least two parallel connected resistance branches, is arranged inside the conductive feeder, whereby a first part of the resistance branches (9) consists of at least one resistance element (11) and the remaining part of the resistance branches (10) consists of at least one resistance element (12) and a rectified component (13).
摘要翻译：在半导体基片具有至少两个描述可控半导体元件（1）的装置（2）嵌入的掺杂区域（3,4）和至少一个栅极，用于控制半导体器件中，导电引线电极（5）（7）到栅极电极（5）。在导电引线（7）电阻器电路（8），具有至少两个并联连接的电阻器的分支（9，10）设置，其中，所述电阻分支的第一部分（9）包括至少一个电阻器元件（11），电阻分支的剩余部分（10）包括至少一个电阻元件（12）和装置（13）与gleichrichtendem行为。

你已经成功收藏专利！

检索式保存成功!

IPRDB

热门服务

关于我们

友情链接

联系方式