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    • 4. 发明申请
    • PLT/PZT FERROELECTRIC STRUCTURE
    • PLT / PZT铁电结构
    • WO2006059955A1
    • 2006-06-08
    • PCT/SG2005/000390
    • 2005-11-16
    • AGENCY FOR SCIENCE TECHNOLOGY AND RESEARCHEZHILVALAVAN, SanthiaguSAMPER, Victor, D.
    • EZHILVALAVAN, SanthiaguSAMPER, Victor, D.
    • H01L21/316C04B35/491H01G4/12H01L41/24
    • H01G7/06H01L28/56H01L41/0815H01L41/318H01L41/319
    • An electrically stable PbLa 0.5 TiO 3 /PbZr 0.52 Ti 0.48 O 3 (PLT/PZT) ferroelectric structure may fabricated using precursor solutions formed using a simple sol-gel process. The PLT/PZT ferroelectric structure may be extended to a PLT/PZT/PLT ferroelectric capacitor structure. In terms of device application, better ferroelectric properties with reliable fatigue characteristics are desirable to render satisfactory performance. and long device life. The PLT/PZT/PLT ferroelectric capacitor structure excels over previous hybrid structures by providing a larger remnant polarization, higher saturation polarization, lower coercive field and leakage current density and higher resistance to fatigue. The fabrication method involving the use of a PLT seeding layer acts to lower the fabrication temperature of the subsequent PZT layer and allows for a simpler sequence of processing steps that may be seen to substantially reduce manufacturing costs.
    • 电化学稳定的PbLa 0.53Ti 3/3 PbZr 0.52 Ti 0.48 O 3(( PLT / PZT)铁电结构可以使用使用简单的溶胶 - 凝胶法形成的前体溶液来制造。 PLT / PZT铁电体结构可以扩展到PLT / PZT / PLT铁电电容器结构。 在器件应用方面,具有可靠的疲劳特性的更好的铁电性能是令人满意的性能的。 设备使用寿命长。 PLT / PZT / PLT铁电电容器结构通过提供更大的残余极化,更高的饱和极化,更低的矫顽场和漏电流密度以及更高的抗疲劳性,优于先前的混合结构。 涉及使用PLT晶种层的制造方法起到降低后续PZT层的制造温度的作用,并且允许可以看到的更简单的处理步骤顺序,从而大大降低制造成本。