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1. 发明申请

WO2020194215A8 DEVICES FOR GENERATION OF ELECTROMAGNETIC RADIATION OF PREDETERMINED PROFILE 审中-公开
公开(公告)号：WO2020194215A8
公开(公告)日：2020-10-01
申请号：PCT/IB2020/052833
申请日：2020-03-25
申请人： TERAHERTZ GROUP LTD.
发明人： GABBAI, Eran , AHARONOV-NADBORNY, Regina
IPC分类号： G02F1/35 , G01N21/3581 , G02F1/19 , G02F1/353 , G02F1/3534 , H01S5/0092 , H01S5/4087
摘要： A device for producing an electromagnetic radiation of predetermined properties is configured as a layered structure and includes a light interacting layer, in communication with at least one light emitting source, and having one or more light interacting regions, each configured to define a closed-loop light mixing path for optically coupling a pair of input coherent light components of predetermined first and second frequencies to create an output radiation component of a third beating frequency of a predetermined high-frequency profile. The device further includes a control layer interfacing with said light interacting layer and configured for controllable switching between inoperative opaque and operative transparent states with respect to the at least one third beating frequency, to selectively prevent and allow transmission of the at least one output radiation component of the third frequency towards a medium in the vicinity of the layered structure.

2. 发明申请

WO2022125352A2 WIDEBAND PHOTONIC SYNTHESIZER STABILIZED TO A REFERENCE CLOCK USING PHOTONIC COMPONENTS 审中-公开
公开(公告)号：WO2022125352A2
公开(公告)日：2022-06-16
申请号：PCT/US2021/061368
申请日：2021-12-01
申请人： OEWAVES, INC.
发明人： EL AMILI, Abdelkrim , ELIYAHU, Danny , MALEKI, Lute
IPC分类号： H01S3/13 , H03L1/00 , H04B10/25 , H01S5/06 , H01S5/0085 , H01S5/02325 , H01S5/0239 , H01S5/0683 , H01S5/4012 , H01S5/4087 , H04B2210/006
摘要： A photonic synthesizer includes a multifrequency optical source to produce a signal of interest from a pair of lasers, which may be self-injection locked chip lasers. The signal is referenced to a high frequency clock using a photonic mixer/divider based on an electro-optical modulator and a relatively slow photodiode. The electro-optical modulator produces optical harmonics from the beams from the pair of lasers, where one harmonic from the first laser beam and one harmonic from the second laser beam beat on the photodiode. A phase locked control signal is generated for controlling the output frequency of one or both of the two lasers. The output signal of the photonic synthesizer is generated using a relatively fast photodiode based on a difference in frequencies of the pair of lasers. The output signal may be a millimeter wave-band signal. The photonic synthesizer can be formed as a photonic integrated circuit (PIC).

3. 发明申请

WO2021144377A1 OPTOELECTRONIC SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING AN OPTOELECTRONIC SEMICONDUCTOR DEVICE 审中-公开
公开(公告)号：WO2021144377A1
公开(公告)日：2021-07-22
申请号：PCT/EP2021/050722
申请日：2021-01-14
申请人： OSRAM OPTO SEMICONDUCTORS GMBH
发明人： FUCHS, Peter , RUSSELL, Ann , FALCK, Thomas , HALBRITTER, Hubert , JENTZSCH, Bruno , LAUER, Christian
IPC分类号： H01S5/40 , H01S5/42 , H01S5/185 , H01S5/02257 , H01S5/00 , H01S5/10 , H01S5/028 , H01S5/30 , H01S5/183 , H01S3/10061 , H01S5/005 , H01S5/0281 , H01S5/0287 , H01S5/1085 , H01S5/18338 , H01S5/18355 , H01S5/18361 , H01S5/18369 , H01S5/18386 , H01S5/18397 , H01S5/3095 , H01S5/4018 , H01S5/4087 , H01S5/423
摘要： An optoelectronic semiconductor device comprises a plurality of laser devices. Each of the laser devices is configured to emit electromagnetic radiation. The laser devices are horizontally arranged. A first laser device of the plurality of laser devices is configured to emit electromagnetic radiation having a first wavelength different from the wavelength of a further laser device of the plurality of laser devices. A difference between the first wavelength and the wavelength of the further laser device is less than 20 nm.

4. 发明申请

WO2021252694A2 DUAL WAVELENGTH VISIBLE LASER SOURCE 审中-公开
公开(公告)号：WO2021252694A2
公开(公告)日：2021-12-16
申请号：PCT/US2021/036695
申请日：2021-06-09
申请人： NUBURU, INC.
发明人： FEVE, Jean-Philippe , ZEDIKER, Mark
IPC分类号： H01S3/08 , G02B27/09 , H01S3/00 , H01S3/02 , H01S3/10 , H01S5/005 , H01S5/0071 , H01S5/02326 , H01S5/02345 , H01S5/4012 , H01S5/405 , H01S5/4087
摘要： The dual wavelength laser diode module is a module that consists of two or more wavelengths separated by 10 nm or more nm with the goal to produce an output beam of two different wavelength beams that are not-colinear. Providing to two separate lines in the focal point of a Fourier transform lens.

5. 发明申请

WO2021247201A1 ALINGAAS/INGAASP/INP EDGE EMITTING SEMICONDUCTOR LASER INCLUDING MULTIPLE MONOLITHIC LASER DIODES 审中-公开
公开(公告)号：WO2021247201A1
公开(公告)日：2021-12-09
申请号：PCT/US2021/031540
申请日：2021-05-10
申请人： SEMINEX CORPORATION
发明人： ABOUJJA, Sidi , BEAN, David M.
IPC分类号： H01S5/30 , H01S5/343 , H01S5/40 , H01S5/0234 , H01S5/0237 , H01S5/02469 , H01S5/026 , H01S5/3054 , H01S5/3095 , H01S5/3409 , H01S5/3416 , H01S5/34306 , H01S5/34313 , H01S5/3434 , H01S5/34366 , H01S5/4043 , H01S5/4087
摘要： A monolithic edge emitting semiconductor laser comprising multiple laser diodes using aluminum indium gallium arsenide phosphide AlInGaAs/InGaAsP/InP material system, emitting in long wavelengths (1250nm to 1720nm). Each laser diode contains an active region comprising aluminium indium gallium arsenide quantum wells (AlInGaAs QW) and aluminium indium gallium arsenide (AlInGaAs) barriers and is connected to the subsequent monolithic laser diode by highly doped, low bandgap and low resistive indium gallium arsenide junction called tunnel junction.

6. 发明申请

WO2021032721A8 HIGH INTENSITY LIGHT SOURCE WITH HIGH CRI 审中-公开
公开(公告)号：WO2021032721A8
公开(公告)日：2021-02-25
申请号：PCT/EP2020/073069
申请日：2020-08-18
申请人： SIGNIFY HOLDING B.V.
发明人： HIKMET, Rifat, Ata, Mustafa , PEETERS, Martinus, Petrus, Joseph , VAN BOMMEL, Ties , VDOVIN, Olexandr, Valentynovych , VAN ASSELT, Robert
IPC分类号： F21K9/64 , F21V9/38 , C09K11/02 , C09K11/7774 , F21V3/08 , F21V7/26 , F21V9/20 , F21Y2113/13 , F21Y2115/30 , H01S5/0087 , H01S5/4087
摘要： The invention provides a light generating device (1000) configured to generate device light (1001), wherein the light generating device (1000) comprises a first light source (110), a first luminescent material (210), a second source (120) of second light (121), and a third light source (130), wherein: the first light source (110) is configured to generate blue first light source light (111) having a first peak wavelength λ1 selected from the spectral wavelength range of 440- 475 nm, wherein the first light source (110) is a first laser light source (10); the first luminescent material (210) is configured to convert at least part of the first light source light (111) into first luminescent material light (211) having an emission band having wavelengths in one or more of (a) the green spectral wavelength range and (b) the yellow spectral wavelength range, wherein the first luminescent material (210) comprises a luminescent material of the type A3B5O12:Ce, wherein A comprises one or more of Y, Gd, Tb and Lu, and wherein B comprises one or more of Al, Ga, and In, wherein A comprises at least Y, and wherein B comprises at least Al; the second source (120) of second light (121) is configured to provide the second light (121) having an emission band having a dominant wavelength or peak wavelength in the spectral wavelength range of 580-610 nm; the third light source (130) is configured to generate red third light source light (131) having a third peak wavelength λ3 selected from the spectral wavelength range of 630- 670 nm, wherein the third light source (130) is a third laser light source (30); the light generating device (1000) is configured to provide in a first operational mode white device light (1001) comprising the first light source light (111), the first luminescent material light (211), the second light (121), and the third light source light (131), with a correlated color temperature selected from the range of 2000-5000 K and a color rendering index (CRI) of at least 80.

7. 发明申请

WO2022069128A2 OPTOELEKTRONISCHE VORRICHTUNG UND VERFAHREN ZUR HERSTELLUNG DERSELBEN 审中-公开
公开(公告)号：WO2022069128A2
公开(公告)日：2022-04-07
申请号：PCT/EP2021/073913
申请日：2021-08-30
申请人： OSRAM OPTO SEMICONDUCTORS GMBH
发明人： HORN, Markus , SORG, Joerg
IPC分类号： H01S5/40 , H01S5/10 , H01S5/0237 , H01S5/028 , H01S5/02326 , H01S5/0234 , H01S5/0287 , H01S5/1039 , H01S5/4043 , H01S5/405 , H01S5/4087
摘要： Es wird eine optoelektronische Laservorrichtung beschrieben, die umfasst: einen ersten Satz von kantenemittierenden Laserdioden, wobei der erste Satz von kantenemittierenden Laserdioden eine oder mehrere erste Laserdioden (21a, 21d, 21f) aufweist, die an einer Seitenfläche (23) jeweils einen ersten Lichtaustrittsbereich (25) für Laserlicht aufweisen, einen zweiten Satz von kantenemittierenden Laserdioden, wobei der zweite Satz von kantenemittierenden Laserdioden eine oder mehrere zweite Laserdioden (21b, 21d, 21e) aufweist, die an einer Seitenfläche (23) jeweils einen zweiten Lichtaustrittsbereich (25) für Laserlicht aufweisen, wobei die Seitenflächen (25) der ersten und zweiten Laserdioden (21a - 21f) zumindest im Wesentlichen in derselben Ebene liegen, wobei eine jeweilige zweite Laserdiode (21b, 21d, 21f) einer jeweiligen ersten Laserdiode (21a, 21d, 21e) zugeordnet ist, und wobei die Lichtaustrittsbereiche (25) der ersten und der zugeordneten zweiten Laserdiode (21a-21f) in einem Abstand zueinander angeordnet sind, welcher kleiner ist als 10 µm, bevorzugt kleiner als 5 µm, weiter bevorzugt kleiner als 3 µm, noch weiter bevorzugt kleiner als 2 µm.

8. 发明申请

WO2021201921A1 RAMAN AMPLIFIER SUPPORTING HIGH OUTPUT POWER AND HIGH BEAM QUALITY 审中-公开
公开(公告)号：WO2021201921A1
公开(公告)日：2021-10-07
申请号：PCT/US2020/062621
申请日：2020-11-30
申请人： RAYTHEON COMPANY
发明人： ROCKWELL, David A.
IPC分类号： H01S3/067 , H01S3/094 , H01S3/0941 , H01S3/30 , H01S5/40 , H01S3/08 , H01S2301/03 , H01S3/06716 , H01S3/06733 , H01S3/06754 , H01S3/08045 , H01S3/094003 , H01S3/094007 , H01S3/09408 , H01S3/094096 , H01S3/09415 , H01S3/302 , H01S5/4012 , H01S5/4087
摘要： A system includes a seed laser (102) configured to generate a seed beam (110) and multiple arrays (116) of semiconductor diode lasers (118) configured to generate multiple pump beams (112). The system also includes a Raman amplifier (108) having a core (202), a first cladding (204) around the core, and at least a second cladding (206) around the first cladding. The core is configured to amplify the seed beam based on optical pump power provided by the pump beams. Each of the core, the first cladding, and the second cladding includes fused silica, and at least the core and the first cladding are doped. The core has a numerical aperture of approximately 0.06 or less and a diameter of approximately 20 μm to approximately 25 μm. The first cladding has a numerical aperture of approximately 0.17 or less and a diameter of approximately 35 μm to approximately 45 μm.

9. 发明申请

WO2023018371A2 LASER COMPONENT AND LASER DEVICE 审中-公开
公开(公告)号：WO2023018371A2
公开(公告)日：2023-02-16
申请号：PCT/SG2022/050561
申请日：2022-08-05
申请人： OSRAM OPTO SEMICONDUCTORS GMBH , AMS SENSORS SINGAPORE PTE. LTD.
发明人： SORG, Jörg Erich , BERNHARD, Stefan
IPC分类号： H01S5/40 , H01S5/0239 , H01S5/024 , H01S5/0234 , H01S5/00 , H01S5/02 , H01S5/02208 , H01S5/10 , H01S2301/176 , H01S5/0217 , H01S5/02255 , H01S5/02315 , H01S5/02326 , H01S5/02345 , H01S5/02476 , H01S5/04256 , H01S5/1039 , H01S5/4031 , H01S5/4043 , H01S5/4087
摘要： A laser component (20) is provided, the laser component (20) comprising at least one first laser diode (21), and at least one second laser diode (22), the first laser diode (21) and the second laser diode (22) each comprising an active zone (23) in a semiconductor layer (24), the active zones (23) each extend parallel to the main plane of extension of the respective laser diode (21, 22), the semiconductor layers (24) each comprise a first side (25) and a second side (26) facing away from the first side (25), the first side (25) and the second side (26) each extending parallel to the main plane of extension of the respective laser diode (21, 22), the second laser diode (22) being arranged on the first laser diode (21) in a vertical direction (z) which is perpendicular to the main plane of extensions of the laser diodes (21, 22), the first laser diode (21) having a larger extent in its main plane of extension than the second laser diode (22) in its main plane of extension and at least one electrical contact (28) is arranged in a contact region (27) of the first laser diode (21) which is arranged on the side of the first laser diode (21) facing the second laser diode (22). A laser device (38) is also disclosed.

10. 发明申请

WO2022223365A2 SEMICONDUCTOR LASER DEVICE AND PROJECTION DEVICE 审中-公开
公开(公告)号：WO2022223365A2
公开(公告)日：2022-10-27
申请号：PCT/EP2022/059729
申请日：2022-04-12
申请人： OSRAM OPTO SEMICONDUCTORS GMBH
发明人： HALBRITTER, Hubert , RUSSEL, Ann
IPC分类号： H01S5/11 , H01S5/026 , H01S5/187 , H01S5/00 , H01S5/40 , H01S5/42 , G02B27/48 , G03B21/20 , H04N9/31 , H01S5/042 , G02B1/005 , G02B26/101 , G02B27/281 , G03B21/2033 , H01S5/0071 , H01S5/34 , H01S5/4012 , H01S5/4075 , H01S5/4087 , H01S5/4093 , H04N9/3129 , H04N9/3164
摘要： A semiconductor laser device comprises an active layer having a main extension plane, a first cladding layer and a second cladding layer where the active layer is arranged between the first and second cladding layer in a direction perpendicular to the main extension plane, at least one first emission region and at least one second emission region arranged next to each other in a direction parallel to the main extension plane, a light-outcoupling surface parallel to the main extension direction and arranged on a side of the second cladding layer opposite to the active layer, and a photonic crystal layer arranged in the first cladding layer or in second cladding layer. The photonic crystal layer may include a first photonic crystal structure in the first emission region and a second photonic crystal structure in the second emission region where the first and the second photonic crystal structures are different.

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