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1. 发明申请

WO2011119113A8 PHOTOELECTRIC TRANSDUCER USING IRON SILICIDE AND ALUMINUM AND METHOD FOR PREPARING THE SAME 审中-公开
标题翻译：使用硅化铁和铝的光电传感器及其制备方法
公开(公告)号：WO2011119113A8
公开(公告)日：2011-12-01
申请号：PCT/SG2011000114
申请日：2011-03-23
申请人： AGENCY SCIENCE TECH & RES , CHI DONGZHI , LIEW SIAO LI , WONG SEE WENG , DALAPATI GOUTAM KUMAR
发明人： CHI DONGZHI , LIEW SIAO LI , WONG SEE WENG , DALAPATI GOUTAM KUMAR
IPC分类号： H01L31/0336 , H01L21/203 , H01L21/24 , H01L21/363 , H01L21/40 , H01L31/072 , H01L31/075
CPC分类号： H01L21/02381 , H01L21/0237 , H01L21/0245 , H01L21/02491 , H01L21/02521 , H01L21/02579 , H01L21/02631 , H01L31/022466 , H01L31/032 , H01L31/0321 , H01L31/0368 , H01L31/03682 , H01L31/03762 , H01L31/03921 , H01L31/072 , H01L31/075 , H01L31/1864 , H01L31/1884 , H01L31/20 , Y02E10/546 , Y02E10/548 , Y02P70/521
摘要： One embodiment of the present invention is a photoelectric transducer having a p/n heterojunction comprising a p-type photoactive (FeSi2)xAly Iron-disilicide Aluminum alloy layer (400) disposed on a substrate (100). Another embodiment of the present invention is a method for forming a photoelectric transducer by depositing an Aluminum interlayer (200) on a substrate (100) by physical vapor deposition; sequentially depositing Iron disilicide (FeSi2) (300) on the Aluminum interlayer (200) by sputtering; and annealing the Aluminum interlayer (200) and Iron disilicide (FeSi2) (300) to form a p-type photoactive (FeSi2)xAly Iron-disilicide Aluminum alloy layer (400) disposed on the substrate (100). Further, the Aluminum interlayer (200) and Iron disilicide (FeSi2) (300) on the Silicon substrate are then subjected to rapid thermal annealing (RTA) or furnace annealing under nitrogen ambient at a temperature range from 400 °C to 800 °C. The annealing step changes FeSi2 layer (300) from the amorphous phase to a poly-crystalline phase (400), such as, orthorhombic ß-phase or tetragonal crystal structure alpha phase (a-phase).
摘要翻译：本发明的一个实施例是具有p / n异质结的光电转换器，所述p / n异质结包括设置在衬底（100）上的p型光活性（FeSi 2）x Al x铁 - 二硅化物铝合金层（400）。本发明的另一个实施例是一种通过物理气相沉积在基板（100）上沉积铝中间层（200）来形成光电转换器的方法; 通过溅射在铝夹层（200）上顺序沉积二硅化铁（FeSi 2）（300）; （200）和二硅化铁（FeSi 2）（300）退火以形成设置在衬底（100）上的p型光活性（FeSi 2）x Al 2铁 - 二硅化物铝合金层（400）。此外，硅衬底上的铝夹层（200）和二硅化铁（FeSi2）（300）然后在氮气环境下在400℃至800℃的温度范围内经受快速热退火（RTA）或炉退火。退火步骤将FeSi2层（300）从非晶相改变为多晶相（400），例如正交β相或四方晶体结构α相（α相）。

2. 发明申请

WO2011084339A3 NICKEL-SILICIDE FORMATION WITH DIFFERENTIAL PT COMPOSITION 审中-公开
标题翻译：具有差异PT组成的镍 - 硅化物形成
公开(公告)号：WO2011084339A3
公开(公告)日：2011-09-09
申请号：PCT/US2010059607
申请日：2010-12-09
申请人： IBM , FRYE ASA , SIMON ANDREW
发明人： FRYE ASA , SIMON ANDREW
IPC分类号： H01L21/336 , H01L21/24 , H01L29/78
CPC分类号： H01L21/28518 , H01L29/665
摘要： Embodiments of the invention provide a method of forming nickel-silicide. The method may include depositing first and second metal layers (105, 106) over at least one of a gate, a source, and a drain region of a field-effect-transistor (FET) (100) through a physical vapor deposition (PVD) process, wherein the first metal layer (105) is deposited using a first nickel target material containing platinum (Pt), and the second metal layer (106) is deposited on top of the first metal layer using a second nickel target material containing no or less platinum than that in the first nickel target material; and annealing the first and second metal layers covering the FET to form a platinum-containing nickel- silicide layer (107) at a top surface of the gate, source, and drain regions.
摘要翻译：本发明的实施例提供一种形成硅化镍的方法。该方法可以包括通过物理气相沉积（PVD）在场效应晶体管（FET）（100）的栅极，源极和漏极区域中的至少一个上沉积第一和第二金属层（105,106））工艺，其中使用包含铂（Pt）的第一镍靶材料沉积第一金属层（105），并且使用不含第二金属层的第二镍靶材料将第二金属层（106）沉积在第一金属层的顶部或更少的铂; 以及退火覆盖所述FET的所述第一和第二金属层，以在所述栅极，源极和漏极区域的顶表面处形成含铂的硅化镍层（107）。

3. 发明申请

WO02023279A1 THERMALLY INDUCED PHASE SWITCH FOR LASER THERMAL PROCESSING 审中-公开
标题翻译：用于激光热处理的热诱导相开关
公开(公告)号：WO02023279A1
公开(公告)日：2002-03-21
申请号：PCT/US2001/042075
申请日：2001-09-07
IPC分类号： G03G5/16 , H01L21/265 , H01L21/268 , H01L21/24
CPC分类号： H01L21/268 , G03G5/16
摘要： A method, apparatus and system for controlling the amount of heat transferred to a process region (30) of a workpiece (W) from exposure with a pulse of radiation (10), which may be in the form of a scanning beam (B), using a thermally induced phase switch layer (60). The apparatus of the invention is a film stack (6) having an absorber layer (50) deposited atop the workpiece, such as a silicon wafer. A portion of the absorber layer covers the process region. The absorber layer absorbs radiation and converts the absorbed radiation into heat. The phase switch layer is deposited above or below the absorber layer. The phase switch layer may comprise one or more thin film layers, and may include a thermal insulator layer and a phase transition layer. Because they are in close proximity, the portion of the phase switch layer covering the process region has a temperature that is close to the temperature of the process region. The phase of the phase switch layer changes from a first phase (e.g., solid) to a second phase (e.g., liquid or vapor) at a phase transition temperature (Tp). During this phase change, the phase switch layer absorbs heat but does not significantly change temperature. This limits the temperature of the absorber layer and the process region since both are close to the phase change layer.
摘要翻译：一种用于控制从辐射脉冲（10）暴露于工件（W）的处理区域（30）的热量的方法，装置和系统，其可以是扫描光束（B）的形式，，使用热感应相位层（60）。本发明的装置是具有沉积在工件上方的诸如硅晶片的吸收层（50）的薄膜叠层（6）。吸收层的一部分覆盖工艺区域。吸收层吸收辐射并将吸收的辐射转化成热。相位开关层沉积在吸收层的上方或下方。相位开关层可以包括一个或多个薄膜层，并且可以包括绝热层和相变层。由于它们非常接近，覆盖处理区域的相位开关层的部分具有接近处理区域的温度的温度。在相转变温度（Tp）下，相位开关层的相位从第一相（例如，固体）变为第二相（例如，液体或蒸气）。在该相变期间，相开关层吸热，但不会明显改变温度。这限制了吸收层和工艺区域的温度，因为它们都接近于相变层。

4. 发明申请

WO01037387A1 SEMICONDUCTOR LASER 审中-公开
标题翻译：半导体激光器
公开(公告)号：WO01037387A1
公开(公告)日：2001-05-25
申请号：PCT/JP2000/008067
申请日：2000-11-16
IPC分类号： H01S5/20 , H01L21/24 , H01S5/02 , H01S5/042 , H01S5/22 , H01S5/343
CPC分类号： H01S5/22 , B82Y20/00 , H01S5/0211 , H01S5/0212 , H01S5/0421 , H01S5/0425 , H01S5/2022 , H01S5/2216 , H01S5/34313
摘要： A semiconductor laser element (30) comprises an n-type GaAs substrate (32) having a band gap energy of Eg1, on which are epitaxially grown an n-type AlGaAs cladding layer (34), an active layer (36) formed as a 2-layer quantum-well structure of InGaAs and GaAs and having a band gap energy of Eg2 smaller than Eg1, a p-type AlGaAs cladding layer (38), and a p-type GaAs cap layer (40). The cap layer and the p-type cladding layer have stripe mesa structures. Passivation film (42) of SiN is formed in the areas except on the cap layer, and a p-side electrode (44) is formed on exposed part of the cap layer and the passivation film. An n-side electrode (46) consisting of a metal laminate of In/AuGe/Ni/Au is formed on the back of the substrate, and an InGaAs layer (48) lies as an absorber medium between the GaAs substrate and the n-type electrode.
摘要翻译：半导体激光器元件（30）包括具有Eg1的带隙能量的n型GaAs衬底（32），在其上外延生长n型AlGaAs覆层（34），有源层（36）形成为具有小于Eg1的Eg2的带隙能量，p型AlGaAs覆层（38）和p型GaAs覆盖层（40）的InGaAs和GaAs的2层量子阱结构。盖层和p型覆层具有条状台面结构。在除了盖层之外的区域中形成SiN的钝化膜（42），并且在盖层和钝化膜的暴露部分上形成p侧电极（44）。在衬底的背面形成由In / AuGe / Ni / Au的金属层压体构成的n侧电极（46），并且在GaAs衬底和n型衬底之间形成InGaAs层（48）作为吸收介质，型电极。

5. 发明申请

WO2012033299A3 PRODUCTION METHOD FOR A SEMICONDUCTOR ELEMENT 审中-公开
标题翻译：半导体元件的生产方法
公开(公告)号：WO2012033299A3
公开(公告)日：2012-06-14
申请号：PCT/KR2011006389
申请日：2011-08-30
申请人： EUGENE TECHNOLOGY CO LTD , KIM HAI WON , WOO SANG HO , CHO SUNG KIL , JANG GIL SUN
发明人： KIM HAI WON , WOO SANG HO , CHO SUNG KIL , JANG GIL SUN
IPC分类号： H01L21/24 , C01B33/06 , C23C14/16
CPC分类号： H01L21/02697 , C01B33/06 , C23C16/0227 , C23C16/04 , C23C16/24 , H01L21/28273 , H01L21/28282 , H01L21/32051 , H01L21/823835 , H01L27/11521 , H01L27/11568 , H01L29/4975 , H01L29/66825 , H01L29/66833
摘要： Provided is a production method for a semiconductor element comprising a metal silicide layer. According to one embodiment of the present invention, the production method for a semiconductor element comprises the steps of: forming an insulating layer on a substrate, on which a polysilicon pattern has been formed, in such a way that the polysilicon pattern is exposed; forming a silicon seed layer on the polysilicon pattern that has been selectively exposed with respect to the insulating layer; forming a metal layer on the substrate on which the silicon seed layer has been formed; and forming a metal silicide layer by carrying out a heat treatment on the substrate on which the metal layer has been formed.
摘要翻译：提供了一种包括金属硅化物层的半导体元件的制造方法。根据本发明的一个实施例，半导体元件的制造方法包括以下步骤：在已经形成多晶硅图案的衬底上形成绝缘层，以使得多晶硅图案被暴露; 在已经相对于绝缘层选择性地暴露的多晶硅图案上形成硅籽晶层; 在已经形成有硅籽晶层的基板上形成金属层; 以及通过在其上形成有金属层的基板上进行热处理来形成金属硅化物层。

6. 发明申请

WO2012033299A2 반도체 소자의 제조 방법 审中-公开
标题翻译：制造半导体器件的方法
公开(公告)号：WO2012033299A2
公开(公告)日：2012-03-15
申请号：PCT/KR2011/006389
申请日：2011-08-30
申请人： 주식회사 유진테크 , 김해원 , 우상호 , 조성길 , 장길순
发明人： 김해원 , 우상호 , 조성길 , 장길순
IPC分类号： H01L21/24 , C23C14/16 , C01B33/06
CPC分类号： H01L21/02697 , C01B33/06 , C23C16/0227 , C23C16/04 , C23C16/24 , H01L21/28273 , H01L21/28282 , H01L21/32051 , H01L21/823835 , H01L27/11521 , H01L27/11568 , H01L29/4975 , H01L29/66825 , H01L29/66833
摘要： 금속 실리사이드층을 포함하는 반도체 소자의 제조 방법을 제공한다. 본 발명의 일 실시예에 따른 반도체 소자의 제조 방법은 폴리실리콘 패턴이 형성된 기판 상에 폴리실리콘 패턴이 노출되도록 절연층을 형성하는 단계, 절연층에 대하여 선택적으로 노출된 폴리실리콘 패턴 상에 실리콘 시드층을 형성하는 단계, 실리콘 시드층이 형성된 기판 상에 금속층을 형성하는 단계 및 금속층이 형성된 기판을 열처리하여 금속 실리사이드층을 형성하는 단계를 포함한다.
摘要翻译：提供了一种制造包括金属硅化物层的半导体器件的方法。根据本发明实施例的制造半导体器件的方法包括以下步骤：在其上形成多晶硅图案的衬底上形成绝缘层以暴露多晶硅图案，在其上形成硅籽晶层的衬底上形成金属层，并且热处理形成有金属层的衬底以形成金属硅化物层。

7. 发明申请

WO2007048108A2 MONOLITHICALLY-PUMPED ERBIUM-DOPED WAVEGUIDE AMPLIFIERS AND LASERS 审中-公开
标题翻译：单纯泵浦的掺铒波导放大器和激光器
公开(公告)号：WO2007048108A2
公开(公告)日：2007-04-26
申请号：PCT/US2006/060075
申请日：2006-10-19
申请人： UNIVERSITY OF NOTRE DAME DU LAC
发明人： HALL, Douglas , MINGJUN, Huang
IPC分类号： H01L21/24
CPC分类号： H01L21/31666 , C03C13/048 , C03C17/23 , C03C25/6286 , C03C2217/228 , C03C2217/242 , C03C2218/32 , H01L21/02178 , H01L21/02233 , H01L21/02255 , H01L21/02321 , H01L21/02351 , H01L21/31155 , H01S3/0632 , H01S3/0637 , H01S3/0941 , H01S3/1608 , H01S3/17 , H01S3/175 , H01S5/026 , H01S5/18308 , H01S5/2004 , H01S5/40 , H01S2301/02
摘要： Disclosed is a method of doping an oxide. The example method includes forming at least one of an AlGaAs oxide or an InAlP oxide on a GaAs substrate, and incorporating Erbium into the at least one AlGaAs oxide or InAlP oxide via ion implantation to form an Erbium-doped oxide layer, The example method also includes annealing the substrate and the at least one AlGaAs oxide or InAlP oxide.
摘要翻译：公开了一种掺杂氧化物的方法。示例性方法包括在GaAs衬底上形成AlGaAs氧化物或InAlP氧化物中的至少一种，并且通过离子注入将铒掺入至少一种AlGaAs氧化物或InAlP氧化物中以形成铒掺杂氧化物层，示例方法还包括退火衬底和至少一种AlGaAs氧化物或InAlP氧化物。

8. 发明申请

WO2005112085A1 COPPER DOPED MAGNETIC SEMICONDUCTORS 审中-公开
标题翻译：铜掺杂磁性半导体
公开(公告)号：WO2005112085A1
公开(公告)日：2005-11-24
申请号：PCT/SE2005/000711
申请日：2005-05-17
申请人： NM SPINTRONICS AB , RAO, Venkat , SHARMA, Parmanand , GUPTA, Amita
发明人： RAO, Venkat , SHARMA, Parmanand , GUPTA, Amita
IPC分类号： H01L21/24
CPC分类号： H01L29/227 , H01F1/0009 , H01F1/404 , H01F1/407 , H01F10/193 , H01L43/10
摘要： A semi-conducting material, a method for producing the material, and ways of implementing the material, wherein said material is doped with Cu or CuO, and is ferromagnetic at least at one temperature in the range between -55°C and 125°C. Typically the material may comprise GaP or GaN.
摘要翻译：半导体材料，材料的制造方法以及实施该材料的方法，其中所述材料掺杂有Cu或CuO，并且至少在-55℃和125℃之间的至少一个温度下是铁磁性的。通常该材料可以包括GaP或GaN。

9. 发明申请

WO99012939A1 LANTHANIDE CHALCOGENOLATES AND LANTHANIDE DOPED CHALCOGENIDE MATRICES AND THEIR ROOM TEMPERATURE SYNTHESIS 审中-公开
标题翻译：兰萨尼亚氯乙酸盐和兰沙丁酸氯化钠基质及其室温合成
公开(公告)号：WO99012939A1
公开(公告)日：1999-03-18
申请号：PCT/US1998/019000
申请日：1998-09-11
IPC分类号： C03C14/00 , C07F5/00 , C03B37/00 , C07F3/06 , H01L21/24
CPC分类号： C07F5/003 , C03C14/008 , C03C2214/17 , C03C2214/30
摘要： New lanthanide chalcogenolates and lanthanide doped chalcogenide matrices are described for use as photon emitters and amplifiers for fiber optic materials. In particular, metal organic precursors for such compositions of the formula: (L)pM-(ER)n are provided. In addition, low temperature procedures for the synthesis of such compositions are also provided.
摘要翻译：新的镧系元素硫族元素化合物和镧系元素掺杂的硫族化物基质被描述为用作光纤材料的光子发射器和放大器。特别地，提供了式（L）pM-（ER）n的这种组合物的金属有机前体。此外，还提供了用于合成这种组合物的低温程序。

10. 发明申请

WO9859098A3 METHOD AND DEVICE FOR PRODUCING ELECTRICALLY CONDUCTIVE CONTINUITY IN SEMICONDUCTOR COMPONENTS 审中-公开
标题翻译：用于在半导体元件中产生电导率连续性的方法和装置
公开(公告)号：WO9859098A3
公开(公告)日：1999-03-18
申请号：PCT/DE9801768
申请日：1998-06-22
申请人： HEIDENHAIN GMBH DR JOHANNES , SILICON SENSOR GMBH , KRIEGEL BERND , KUDELLA FRANK , ARNOLD RENE
发明人： KRIEGEL BERND , KUDELLA FRANK , ARNOLD RENE
IPC分类号： H01L23/52 , H01L21/00 , H01L21/22 , H01L21/225 , H01L21/3205 , H01L21/768 , H01L31/02 , H01L31/10 , C30B13/02 , H01L21/24 , H01L23/48 , H01L31/0224
CPC分类号： H01L21/67115 , H01L21/76898 , H01L31/02005 , H01L2924/0002 , H01L2924/00
摘要： The invention relates to a method and device for producing electrically conductive continuity in semiconductor components, preferably mounted on a semiconductor, by means of thermomigration, wherein a temperature gradient between two opposing surfaces of the semiconductor component is produced and a conductive dopant is applied on the cooler surface. One surface of the semiconductor is arranged on a cooled sampling and the opposite surface is exposed to heat radiation whose total output and power distribution can be regulated on the surface of the semiconductor. The total output and/or power distribution of the heat radiation is regulated depending on the temperature measured on at least one measuring point on the semiconductor or the semiconductor component.

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