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    • 2. 发明申请
    • HIGH-SPEED ELECTRO-OPTIC MODULATOR
    • 高速电光调制器
    • WO99067679A2
    • 1999-12-29
    • PCT/US1999/007761
    • 1999-04-08
    • G02F1/03G02F1/055G02F1/00
    • G02F1/055G02F1/0555G02F1/0556G02F2201/17G02F2203/06G02F2203/48
    • An optical modulator is provided to control the intensity of a transmitted or reflected light. In a transmission mode, a separator splits arbitrarily polarized light into two polarization rays and one is made to travel a separate path from the other. A recombiner causes the two rays to recombine at an output unless an electro-optic phase retarder changes the polarization of the two rays, in which case, both of them miss the output by an amount which is a function of the voltage on the retarder. A normally-off version with low polarization mode dispersion is obtained by changing the orientation of the recombiner. A normally-on version with low polarization mode dispersion is obtained with a passive polarization direction rotation. Similar results can be obtained in a reflection mode where the input and output are on the same side of the modulator. Versions using a GRIN lens are particularly suited to modulation of light out of and back into fiber-optic cables. The device can be operated as a variable optical attenuator, an optical switch, or a high speed modulator and is insensitive to polarization of the input light. A preferred material for the phase retarder is a hot-pressed ceramic lead lanthanum zirconate titanate composition.
    • 提供光调制器以控制透射或反射光的强度。 在透射模式中,分离器将任意偏振光分离成两个偏振光,一个偏振光从另一个行进。 重组器会导致两条射线在输出端重新组合,除非电光相位延迟器改变两个射线的极化,在这种情况下,它们都将输出误差减去延迟器上的电压的函数。 通过改变重组器的取向,获得具有低偏振模色散的常关型。 通过无源偏振方向旋转获得具有低偏振模色散的常导型。 在输入和输出位于调制器的同一侧的反射模式下可以获得类似的结果。 使用GRIN镜头的版本特别适用于调制光纤到光纤的光纤。 该器件可以作为可变光衰减器,光开关或高速调制器操作,并且对输入光的偏振不敏感。 用于相缓凝剂的优选材料是热压陶瓷铅锆酸镧锆酸盐组合物。
    • 5. 发明申请
    • SPATIAL LIGHT MODULATOR
    • 空间光调制器
    • WO0137033A9
    • 2002-08-15
    • PCT/US0031762
    • 2000-11-17
    • CORNING APPLIED TECHNOLOGIESWANG FEILINGLI KEWEN KEVINTSANG DEAN
    • WANG FEILINGLI KEWEN KEVINTSANG DEAN
    • G02F1/03G02F1/055G02F1/21
    • G02F1/055G02F1/0311G02F2001/213G02F2202/10G02F2203/12G02F2203/15
    • A modulator formed with a solid state electro-optic material having a pixellated structure interconnected to a circuit on a semiconductor substrate. Silicon CMOS integrated circuit that can include random access memories (RAMs) are used as a substrate and interfaced to solid state electro-optic materials coated thereon. In particular, the electro-optic modulators are controlled by RAM cells to produce a modulation of reflected light. SRAMs can be used with connection to the SRAM cell flip-flop. DRAMs can be used with the modulator replacing the DRAM storage capacitor. The SLM thus formed can be connected to a digital computer and controlled as if were a being written to as a memory, but other IC structures can also be used. In order to enhance the modulation effects, the electro-optic material is used as the spacer for a Fabry-Perot etalon structure that is also deposited on the semiconductor substrate. PLZT is a suitable electro-optic material.
    • 用固态电光材料形成的调制器,具有与半导体衬底上的电路互连的像素化结构。 可以包括随机存取存储器(RAM)的硅CMOS集成电路用作衬底并且与其上涂覆的固态电光材料连接。 具体而言,电光调制器由RAM单元控制以产生反射光的调制。 SRAM可以连接到SRAM单元触发器。 随着调制器替代DRAM存储电容器,DRAM可以使用。 这样形成的SLM可以连接到数字计算机并且可以像被写入存储器一样进行控制,但也可以使用其他IC结构。 为了增强调制效果,电光材料被用作同样沉积在半导体衬底上的用于法布里 - 珀罗标准具结构的间隔物。 PLZT是一种合适的电光材料。
    • 7. 发明申请
    • ELECTRO-OPTIC SWITCHING ASSEMBLY AND METHOD
    • 电光开关组件和方法
    • WO0140849A3
    • 2001-11-15
    • PCT/US0030481
    • 2000-11-03
    • TELOPTICS CORPROMANOVSKY ALEXANDER BHAERTLING GENE H
    • ROMANOVSKY ALEXANDER BHAERTLING GENE H
    • G02B6/12G02B6/35G02F1/055G02F1/313G02F1/315H04Q11/00G02F1/025G02F1/03H04J14/02
    • H04Q11/0003G02B6/3546G02B6/3596G02B2006/12145G02F1/055G02F1/3137G02F1/315
    • An optical switch (218) is integrated into a planar waveguide substrate in order to selectively switch light (240, 301, 351) entering the switch from one waveguide (232, 234) to exit the switch along either of at least two other waveguides (236, 238). The optical switch (218) includes an electro-optic material (222), preferably PLTZ, that is deposited into a cavity (220) formed within the substrate (214). The switch (218) includes first and second regions (226, 228) that interface at a boundary (230), and the electro-optic material (222) is located in one of the regions (226, 228) such that an electrical field source (212, 213, 224) coupled to the material (222) in the one region (226) adjusts the boundary (230) between transmission and reflection modes. PLTZ is provided in the switch (11) in a formulation that provides little hysteresis with respect to the applied field, and in particular is a non-ferroelectric, cubic, relaxor, polycrystalline, ceramic type having a lanthanum concentration of between about 8.5% and about 9.0%.
    • 光开关(218)被集成到平面波导衬底中以便选择性地将从一个波导(232,234)进入开关的光(240,301,351)沿着至少两个其他波导(232,234)中的任一个离开开关 236,238)。 光学开关(218)包括沉积在形成在衬底(214)内的空腔(220)中的电光材料(222),优选为PLTZ。 开关(218)包括在边界(230)处交界的第一和第二区域(226,228),并且电光材料(222)位于区域(226,228)中的一个中,使得电场 耦合到一个区域(226)中的材料(222)的源(212,213,224)调整透射和反射模式之间的边界(230)。 PLTZ在开关(11)中以相对于施加电场几乎不提供滞后作用的配方提供,并且特别是镧浓度在约8.5%和约8.5%之间的非铁电立方弛豫多晶陶瓷类型 约9.0%。
    • 8. 发明申请
    • NONLINEAR OPTICAL CdSiP2 CRYSTAL AND PRODUCING METHOD AND DEVICES THEREFROM
    • 非线性光学CdSiP2晶体及其制造方法及器件
    • WO2010082968A2
    • 2010-07-22
    • PCT/US2009/061786
    • 2009-10-23
    • BAE SYSTEMS INFORMATION AND ELECTRONIC SYSTEMS INTEGRATION INC.SCHUNEMANN, Peter, G.ZAWILSKI, Kevin, T.
    • SCHUNEMANN, Peter, G.ZAWILSKI, Kevin, T.
    • G02F1/055
    • G02F1/35A61B18/20G02F1/3551
    • CdSiP 2 crystals with sizes and optical quality suitable for use as nonlinear optical devices are disclosed, as well as NLO devices based thereupon. A method of growing the crystals by directional solidification from a stoichiometric melt is also disclosed. The disclosed NLO crystals have a higher nonlinear coefficient than prior art crystals that can be pumped by solid state lasers, and are particularly useful for frequency shifting 1.06 μm, 1.55 μm, and 2 μm lasers to wavelengths between 2 μm and 10 μm. Due to the high thermal conductivity and low losses of the claimed CdSiP 2 crystals, average output power can exceed 10 W without severe thermal lensing. A 6.45 μm laser source for use as a medical laser scalpel is also disclosed, in which a CdSiP 2 crystal is configured for non-critical phase matching, pumped by a 1064nm Nd:YAG laser, and temperature-tuned to produce output at 6.45 μm.
    • 公开了适合用作非线性光学器件的尺寸和光学质量的CdSiP 2晶体以及基于此的NLO器件。 还公开了通过来自化学计量熔体的定向凝固来生长晶体的方法。 所公开的NLO晶体具有比可由固态激光器泵浦的现有技术晶体更高的非线性系数,并且对于在2μm和10μm之间的波长的1.06μm,1.55μm和2μm激光器的频移特别有用。 由于所要求的CdSiP2晶体的高导热性和低损耗,平均输出功率可以超过10W而没有严重的热透镜。 还公开了用作医疗激光手术刀的6.45μm激光源,其中将CdSiP2晶体配置为非临界相位匹配,由1064nm Nd:YAG激光器泵浦,并进行温度调节以产生6.45μm的输出。