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    • 3. 发明申请
    • A CHEMICAL BATH DEPOSITION APPARATUS FOR FABRICATION OF SEMICONDUCTOR FILMS THROUGH ROLL-TO-ROLL PROCESSES
    • 用于通过辊到辊工艺制造半导体膜的化学浴沉积装置
    • WO2012170368A1
    • 2012-12-13
    • PCT/US2012/040817
    • 2012-06-05
    • WANG, Jiaxiong
    • WANG, Jiaxiong
    • H01L31/18B05C11/00C23C16/30
    • H01L31/18C23C18/08C23C18/12C23C18/1204C23C18/1208C23C18/1216C23C18/1291H01L31/0296H01L31/0322H01L31/206Y02E10/541Y02P70/521
    • A chemical bath deposition method and a system are presented to prepare thin films on continuous flexible substrates in roll-to-roll processes. In particular, they are useful to deposit CdS or ZnS buffer layers in manufacture of thin film solar cells. This method and its deposition system deposit thin films onto vertically travelling continuous flexible workpieces delivered by a roll-to-roll system. The thin films are deposited with continuously spraying reaction solutions from their freshly mixed styles to gradually aged forms until a designed thickness is obtained. The substrates and the solutions are heated to a reaction temperature. During a deposition process, the front surface of a flexible substrate is totally covered with the sprayed solutions but the substrate backside is dry. Reaction ambience inside the reactor can be isolated from outside atmosphere. The apparatus is designed to generate a minimum amount of waste solutions for chemical treatments.
    • 提出了一种化学浴沉积方法和系统,用于在卷对卷工艺中在连续柔性基板上制备薄膜。 特别地,它们可用于在制造薄膜太阳能电池中沉积CdS或ZnS缓冲层。 该方法及其沉积系统将薄膜沉积在由卷对卷系统传送的垂直行进的连续柔性工件上。 将薄膜从其新鲜混合样式中连续喷射反应溶液沉积到逐渐老化的形式,直到获得设计的厚度。 将基材和溶液加热至反应温度。 在沉积过程中,柔性基板的前表面被喷涂的溶液完全覆盖,但是基板背面是干的。 反应器内部的反应气氛可以从外界大气隔离。 该设备旨在为化学处理产生最少量的废物溶液。
    • 5. 发明申请
    • TRANSPARENT CONDUCTING OXIDES
    • 透明导电氧化物
    • WO2011027115A2
    • 2011-03-10
    • PCT/GB2010/001664
    • 2010-09-02
    • ISIS INNOVATION LIMITEDKUZNETSOV, Vladimir, L.
    • KUZNETSOV, Vladimir, L.
    • H01B1/08
    • H01B1/08B05D3/10B05D5/12C23C18/08C23C18/1208C23C18/1216C23C18/1233C23C18/1245C23C18/1254C23C18/1258C23C18/1291C23C18/1295Y10T428/24479Y10T428/24628Y10T428/24802
    • The invention provides a process for producing a transparent conducting film, which film comprises a doped zinc oxide wherein the dopant comprises Si, which process comprises: disposing a composition which is a liquid composition or a gel composition onto a substrate, wherein the composition comprises Zn and Si; and heating said substrate. The invention further provides transparent conducting films obtainable by the process of the invention, including transparent conducting films which comprise a doped zinc oxide wherein the dopant comprises Si, and wherein the film covers a surface area equal to or greater than 0.01 m 2 . The invention also provides a coated substrate, which substrate comprises a surface, which surface is coated with a transparent conducting film, wherein the film comprises a doped zinc oxide wherein the dopant comprises Si, and wherein the area of said surface which is coated with said film is equal to or greater than 0.01 m 2 . The invention further provides coatings comprising the films of the invention, processes for producing such films and coatings, and various uses of the films and coatings.
    • 本发明提供一种制造透明导电膜的方法,该膜包括掺杂的氧化锌,其中掺杂剂包括Si,该方法包括:将一种作为液体组合物或凝胶组合物的组合物设置在基材上,其中组合物包含Zn 和Si; 并加热所述衬底。 本发明还提供了可通过本发明方法获得的透明导电膜,其包括透明导电膜,其包含掺杂的氧化锌,其中所述掺杂剂包含Si,并且其中所述膜覆盖等于或大于0.01m2的表面积。 本发明还提供一种涂覆的基底,该基底包括表面,该表面涂覆有透明导电膜,其中所述膜包括掺杂的氧化锌,其中所述掺杂剂包含Si,并且其中所述表面的面积涂覆有所述 膜等于或大于0.01m2。 本发明还提供了包含本发明的膜的涂层,用于生产这种膜和涂层的方法以及膜和涂层的各种用途。