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1. 发明申请

WO2014124158A3 SPECTRAL PURITY FILTER AND LIGHT MONITOR FOR AN EUV ACTINIC RETICLE INSPECTION SYSTEM 审中-公开
标题翻译：欧盟专业检疫系统的光谱滤光片和光监测仪
公开(公告)号：WO2014124158A3
公开(公告)日：2015-01-15
申请号：PCT/US2014015135
申请日：2014-02-06
申请人： KLA TENCOR CORP
发明人： WANG DAIMIAN , WANG LI , ALLES DAVID
IPC分类号： G03F1/84 , G03F7/00 , H01L21/027
CPC分类号： G03F1/24 , G01N21/956 , G01N2021/95676 , G03F1/22 , G03F1/84 , G03F7/70033
摘要： An extreme ultraviolet (EUM) mask inspection system, comprising a light source to project EUV light along an optical axis, an illumination system to receive the EUV light from the source, the illumination system comprising a spectral purity filter (SPF), the SPF transmits a first portion of the EUV light along the optical axis toward a mask and the SPF comprising a plurality of at least partially reflective elements, said elements reflects a second portion of the EUV light off the optical axis, a projection system adapted to receive the first portion of the EUV light after it has illuminated the mask, a first detector array adapted to receive the image, and a second detector array to receive the second portion of the EUV light. The SPF may comprise one or more multilayer interference-type filters. Alternatively, the SPF comprises a thin film filter disposed on a grazing incidence mirror array.
摘要翻译：一种极光紫外线（EUM）掩模检查系统，包括沿着光轴投射EUV光的光源，用于接收来自源的EUV光的照明系统，该照明系统包括光谱纯度滤光片（SPF），SPF透射所述EUV光的第一部分沿光轴朝向掩模，并且所述SPF包括多个至少部分反射元件，所述元件将所述EUV光的第二部分反射离开所述光轴，所述投影系统适于接收所述第一所述EUV光在其照亮所述掩模之后的部分，适于接收所述图像的第一检测器阵列，以及用于接收所述EUV光的第二部分的第二检测器阵列。 SPF可以包括一个或多个多层干涉型滤波器。或者，SPF包括设置在掠入射镜阵列上的薄膜滤光器。

2. 发明申请

WO2014093732A3 DELTA DIE INTENSITY MAP MEASUREMENT 审中-公开
标题翻译： DELTA DIE强度地图测量
公开(公告)号：WO2014093732A3
公开(公告)日：2014-11-27
申请号：PCT/US2013074841
申请日：2013-12-13
申请人： KLA TENCOR CORP
发明人： HESS CARL E
IPC分类号： H01L21/66
CPC分类号： G06T7/001 , G01N21/95607 , G01N2021/95615 , G06T2207/10056 , G06T2207/20021 , G06T2207/30148
摘要： With an optical inspection tool, images of a plurality of patches of a plurality of dies of a reticle are obtained. The patch images are obtained so that each patch image is positioned relative to a same reference position within its respective die as another die- equivalent one of the patch images in each the other ones of the dies. For each patch image, an integrated value is determined for an image characteristic of sub-portions of such patch image. For each patch image, a reference value is determined based on the integrated values of the patch image's corresponding die-equivalent patch images. For each patch image, a difference between that patch image's integrated value and an average or median value of its die-equivalent patch images is determined whereby a significant difference indicates a variance in a pattern characteristic of a patch and an average or median pattern characteristic of its die-equivalent patches.
摘要翻译：利用光学检查工具，获得了光罩的多个裸片的多个贴片的图像。获得贴片图像，使得每个贴片图像相对于其相应裸片内的相同基准位置被定位成与另外一个芯片中的另一个片上相当的贴片图像之一。对于每个贴片图像，针对这种贴片图像的子部分的图像特性确定积分值。对于每个补丁图像，基于补丁图像的相应的管芯等效补丁图像的积分值来确定参考值。对于每个贴片图像，确定该贴片图像的积分值与其芯片等效贴片图像的平均值或中值之间的差异，其中显着差异指示贴片的图案特性的变化，以及贴片的图案特性的平均或中值图案特性其模具等效补丁。

3. 发明申请

WO2013192012A2 LASER CRYSTAL DEGRADATION COMPENSATION 审中-公开
标题翻译：激光晶体降解补偿
公开(公告)号：WO2013192012A2
公开(公告)日：2013-12-27
申请号：PCT/US2013045696
申请日：2013-06-13
申请人： KLA TENCOR CORP
发明人： GENIS PATRICK C
IPC分类号： H01L21/66
CPC分类号： G01N21/8806 , G02F1/3525
摘要： Method and system for laser crystal degradation compensation are disclosed. The method includes: defining a plurality of sites on a frequency converting crystal; determining a degradation rate associated with each of the plurality of sites; determining an amount of time T wherein a site is continuously operable within a tolerated variation of at least one beam parameter, the amount of time T being determined based on the tolerated variation of the at least one beam parameter and the degradation rate; determining an amount of time t wherein t is a fraction of T; and iteratively shifting among the plurality of sites, wherein each of the plurality of sites is utilized continuously for a duration of time t for each iteration.
摘要翻译：公开了用于激光晶体退化补偿的方法和系统。该方法包括：在频率转换晶体上定义多个位置; 确定与所述多个站点中的每个站点相关联的降级速率; 确定一个时间量T，其中站点在至少一个波束参数的容许变化范围内可连续操作，所述时间量T是基于所述至少一个波束参数的容许变化和降解速率来确定的; 确定时间t，其中t是T的分数; 并且在多个站点之间迭代地移动，其中，对于每个迭代，多个站点中的每一个连续地被使用一段时间t。

4. 发明申请

WO2013040063A3 DETERMINING DESIGN COORDINATES FOR WAFER DEFECTS 审中-公开
标题翻译：确定缺陷的设计坐标
公开(公告)号：WO2013040063A3
公开(公告)日：2013-06-27
申请号：PCT/US2012054904
申请日：2012-09-12
申请人： KLA TENCOR CORP , CHANG ELLIS , VAN RIET MICHAEL , PARK ALLEN , ZAFAR KHURRAM , BHATTACHARYYA SANTOSH
发明人： CHANG ELLIS , VAN RIET MICHAEL , PARK ALLEN , ZAFAR KHURRAM , BHATTACHARYYA SANTOSH
IPC分类号： H01L21/66
CPC分类号： G06T7/001 , G06T7/74 , G06T2207/30148
摘要： Methods and systems for determining design coordinates for defects detected on a wafer are provided. One method includes aligning a design for a wafer to defect review tool images for defects detected in multiple swaths on the wafer by an inspection tool, determining a position of each of the defects in design coordinates based on results of the aligning, separately determining a defect position offset for each of the multiple swaths based on the swath in which each of the defects was detected (swath correction factor), the design coordinates for each of the defects, and a position for each of the defects determined by the inspection tool, and determining design coordinates for the other defects detected in the multiple swaths by the inspection tool by applying the appropriate swath correction factor to those defects.
摘要翻译：提供了用于确定在晶片上检测到的缺陷的设计坐标的方法和系统。一种方法包括对准晶片的设计以通过检查工具对晶片上的多个条带中检测到的缺陷来检查工具图像，基于对准的结果确定每个缺陷在设计坐标中的位置，分别确定缺陷基于检测到每个缺陷的条带（条纹校正因子），每个缺陷的设计坐标以及由检查工具确定的每个缺陷的位置，针对每个多个条带的位置偏移，以及通过对这些缺陷应用适当的条纹校正因子来确定检测工具在多个条中检测到的其他缺陷的设计坐标。

5. 发明申请

WO2013049001A3 HIGH THROUGHPUT THIN FILM CHARACTERIZATION AND DEFECT DETECTION 审中-公开
标题翻译：高通量薄膜表征和缺陷检测
公开(公告)号：WO2013049001A3
公开(公告)日：2013-05-23
申请号：PCT/US2012057019
申请日：2012-09-25
申请人： KLA TENCOR CORP
发明人： GAO XIANG , FLANNER III PHILIP D , POSLAVSKY LEONID , JIANG ZHIMING , YE JUN-JIE JULILEN , KAACK TORSTEN , ZHAO QIANG
IPC分类号： G01N21/49 , G06F19/00
CPC分类号： G01N21/9501 , G01N21/211 , G01N21/8422 , G01N21/8851 , H01L22/12
摘要： Methods and systems for determining band structure characteristics of high-k dielectric films deposited over a substrate based on spectral response data are presented. High throughput spectrometers are utilized to quickly measure semiconductor wafers early in the manufacturing process. Optical dispersion metrics are determined based on the spectral data. Band structure characteristics such as band gap, band edge, and defects are determined based on optical dispersion metric values. In some embodiments a band structure characteristic is determined by curve fitting and interpolation of dispersion metric values. In some other embodiments, band structure characteristics are determined by regression of a selected dispersion model. In some examples, band structure characteristics indicative of band broadening of high-k dielectric films are also determined. The electrical performance of finished wafers is estimated based on the band structure characteristics identified early in the manufacturing process.
摘要翻译：提出了用于基于光谱响应数据确定沉积在衬底上的高k电介质膜的带结构特性的方法和系统。高通量光谱仪用于在制造过程早期快速测量半导体晶片。光学色散度量是基于光谱数据确定的。根据光学色散度量值确定带隙结构特征，如带隙，带边缘和缺陷。在一些实施例中，频带结构特性通过色散度量值的曲线拟合和插值来确定。在一些其他实施例中，通过选择的扩散模型的回归确定带结构特性。在一些示例中，还确定了指示高k介电膜的带宽变宽的能带结构特征。根据制造过程早期确定的能带结构特性估算成品晶圆的电气性能。

6. 发明申请

WO2013036660A2 PASSIVE POSITION COMPENSATION OF A SPINDLE, STAGE, OR COMPONENT EXPOSED TO A HEAT LOAD 审中-公开
标题翻译：主轴负载，阶段或元件受热负荷的无源位置补偿
公开(公告)号：WO2013036660A2
公开(公告)日：2013-03-14
申请号：PCT/US2012053990
申请日：2012-09-06
申请人： KLA TENCOR CORP , DOYLE PAUL , BELYAEV ALEXANDER
发明人： DOYLE PAUL , BELYAEV ALEXANDER
IPC分类号： H01L21/66
CPC分类号： G02B7/008 , G01N21/9501 , G01N2201/021 , H01L21/67103 , H01L21/68792 , Y10T403/21
摘要： Disclosed herein is an apparatus for providing passive correction for thermal effects on a mounted mechanical component. Further disclosed is a wafer inspection system employing the passive thermal effect correction apparatus.
摘要翻译：本文公开了一种用于对安装的机械部件上的热效应提供被动校正的装置。还公开了采用被动热效应校正装置的晶片检查系统。

7. 发明申请

WO2013003371A3 MULTIPLE-COLUMN ELECTRON BEAM APPARATUS AND METHODS 审中-公开
标题翻译：多柱电子束装置和方法
公开(公告)号：WO2013003371A3
公开(公告)日：2013-02-28
申请号：PCT/US2012044244
申请日：2012-06-26
申请人： KLA TENCOR CORP , SHADMAN KHASHAYAR , HAYNES ROBERT G , SEARS CHRISTOPHER M , NASSER-GHODSI MEHRAN
发明人： SHADMAN KHASHAYAR , HAYNES ROBERT G , SEARS CHRISTOPHER M , NASSER-GHODSI MEHRAN
IPC分类号： H01J37/06 , H01J37/10
CPC分类号： H01J37/141 , B82Y10/00 , B82Y40/00 , G21K1/093 , H01J37/14 , H01J37/3007 , H01J37/3177 , H01J2237/2817
摘要： One embodiment disclosed relates an apparatus which includes an electromagnet arranged to provide a large-scale magnetic field in a region. The apparatus further includes an array of multiple electron beam columns formed in the region using an array of bores through magnetic material. Another embodiment relates to a method of generating an array of electron beams. A large-scale magnetic field is generated in a region using at least two magnetic poles. The array of electron beams is generated using an array of columns formed using bores through a magnetic material positioned in the region. Other embodiments, aspects and features are also disclosed.
摘要翻译：所公开的一个实施例涉及一种装置，其包括布置成在区域中提供大规模磁场的电磁体。该设备还包括使用穿过磁性材料的孔阵列在该区域中形成的多个电子束柱的阵列。另一个实施例涉及一种产生电子束阵列的方法。使用至少两个磁极的区域中产生大规模磁场。电子束阵列是使用通过位于该区域中的磁性材料的孔形成的列阵列产生的。其他实施例，方面和特征也被公开。

8. 发明申请

WO2012150993A3 ACCURATE AND FAST NEURAL NETWORK TRAINING FOR LIBRARY-BASED CRITICAL DIMENSION (CD) METROLOGY 审中-公开
标题翻译：基于图书馆临界尺度（CD）的精确和快速的神经网络训练
公开(公告)号：WO2012150993A3
公开(公告)日：2013-02-28
申请号：PCT/US2012026927
申请日：2012-02-28
申请人： TOKYO ELECTRON LTD , KLA TENCOR CORP , JIN WEN , YUONG VI , BAO JUNWEI , LEE LIE-QUAN , POSLAVSKY LEONID
发明人： JIN WEN , YUONG VI , BAO JUNWEI , LEE LIE-QUAN , POSLAVSKY LEONID
IPC分类号： G06F19/00 , G01N21/00 , G06N3/02
CPC分类号： G06N3/08 , G06N3/0454
摘要： Approaches for accurate neural network training for library-based critical dimension (CD) metrology are described. Approaches for fast neural network training for library-based CD metrology are also described.
摘要翻译：描述了基于图书馆的关键维度（CD）计量学的准确神经网络训练的方法。还介绍了基于图书馆的CD测量的快速神经网络训练方法。

9. 发明申请

WO2013017993A2 METHOD AND APPARATUS FOR ESTIMATING THE EFFICIENCY OF A SOLAR CELL 审中-公开
公开(公告)号：WO2013017993A2
公开(公告)日：2013-02-07
申请号：PCT/IB2012053776
申请日：2012-07-25
申请人： KLA TENCOR CORP , DE GREEVE JOHAN , VAN ROSSEN KRISTIAAN
发明人： DE GREEVE JOHAN , VAN ROSSEN KRISTIAAN
IPC分类号： H01L21/66 , H01L31/042 , H01L31/18
CPC分类号： G06T7/0004 , H02S50/10
摘要： A method for estimating the efficiency of a solar cell to be manufactured from a wafer is disclosed, wherein the efficiency estimate is obtained from a density of crystallite boundaries on a surface of the wafer. In embodiments the density of crystallite boundaries is obtained from a digital image of the surface of the wafer, from which first a filtered image, and then a binary image is generated. The binary image is evaluated to obtain the density of crystallite boundaries. Alternatively, the efficiency estimate is obtained from the sizes of crystallites on the surface of the wafer. An apparatus for obtaining the efficiency estimate is also disclosed.

10. 发明申请

WO2012125581A3 METHOD AND APPARATUS FOR INSPECTING A REFLECTIVE LITHOGRAPHIC MASK BLANK AND IMPROVING MASK QUALITY 审中-公开
标题翻译：用于检查反射层状掩蔽层并提高掩蔽质量的方法和装置
公开(公告)号：WO2012125581A3
公开(公告)日：2012-12-27
申请号：PCT/US2012028812
申请日：2012-03-12
申请人： KLA TENCOR CORP , XIONG YALIN , STOKOWSKI STANLEY E
发明人： XIONG YALIN , STOKOWSKI STANLEY E
IPC分类号： G03F1/22 , G03F1/72 , G03F1/84
CPC分类号： G03F1/24 , G03F1/72 , G03F1/84
摘要： An EUV integrated circuit fabrication method and system EUV that includes blank inspection, defect characterization, simulation, pattern compensation, modification of the mask writer database, inspection and simulation of patterned masks, and patterned mask repair. The system performs blank inspection to identify defects at multiple focal planes within the blank. The mask can be relocated on the blank and alterations to the pattern can be developed to compensate for the defects prior to prior to patterning the mask. Once the mask has been patterned, the reticle is inspected to identify any additional or remaining defects that were not picked up during blank inspection or fully mitigated through pattern compensation. The patterned reticle can then be repaired prior to integrated circuit fabrication.
摘要翻译： EUV集成电路制造方法和系统EUV包括空白检查，缺陷表征，模拟，图案补偿，掩模写入器数据库的修改，图案化掩模的检查和模拟以及图案化掩模修复。系统执行空白检查以识别空白中多个焦平面上的缺陷。掩模可以重新定位在坯件上，并且可以开发对图案的改变以在图案化掩模之前补偿缺陷。一旦掩模被图案化，检查掩模版以识别在空白检查期间未被拾取的任何附加或剩余的缺陷，或通过图案补偿完全减轻。然后可以在集成电路制造之前修复图案化的掩模版。

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