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1. 发明申请

WO2011094558A3 INFRARED EXTERNAL PHOTOEMISSIVE DETECTOR 审中-公开
标题翻译：红外外部光电检测探测器
公开(公告)号：WO2011094558A3
公开(公告)日：2011-12-01
申请号：PCT/US2011022948
申请日：2011-01-28
申请人： UNIV HOWARD , BATES CLAYTON W JR
发明人： BATES CLAYTON W JR
IPC分类号： H01L31/109 , H01L31/09
CPC分类号： H01L31/035209 , H01J1/34 , H01J31/49 , H01L31/108
摘要： An infrared external photoemissive detector can have an n-p heterojunction comprising an n-type semiconductor layer and a p-layer; the n-layer semiconductor comprising doped silicon embedded with nanoparticles forming Schottky barriers; and the p-layer is a p-type diamond film. The nanoparticles can be about 20 - 30 atomic percentage metal particles (such as silver) having an average particle size of about 5 - 10 nm. The p-layer can have a surface layer that has a negative electron affinity. The n-layer can be in the range of about 3 µm to 10 µm thick, and preferably about 3 µm thick. The doped silicon can be doped with elements selected from the list consisting of phosphorus and antimony.
摘要翻译：红外外部光发射检测器可以具有包括n型半导体层和p层的n-p异质结; 所述n层半导体包括嵌入有形成肖特基势垒的纳米颗粒的掺杂硅; 并且p层是p型金刚石膜。纳米颗粒可以是平均粒径为约5-10nm的约20-30原子百分比的金属颗粒（例如银）。 p层可以具有负电子亲和力的表面层。 n层可以在约3μm至10μm厚的范围内，并且优选地约3μm厚。掺杂的硅可以掺杂选自由磷和锑组成的列表中的元素。

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