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1. 发明申请

WO2017210140A1 METHOD OF SELECTIVE SILICON NITRIDE ETCHING 审中-公开
标题翻译：选择性硅氮化物蚀刻方法
公开(公告)号：WO2017210140A1
公开(公告)日：2017-12-07
申请号：PCT/US2017/034860
申请日：2017-05-26
申请人： TOKYO ELECTRON LIMITED , TOKYO ELECTRON U.S. HOLDINGS, INC.
发明人： RANJAN, Alok , RASTOGI, Vinayak , SHERPA, Sonam D.
IPC分类号： H01L21/3065 , H01L21/67 , H01L21/3213
CPC分类号： H01L21/31116 , H01L21/0217 , H01L21/02274 , H01L21/0228 , H01L21/0337
摘要： Embodiments of the invention provide a substrate processing method for selective SiN etching relative to other layers used in semiconductor manufacturing. According to one embodiment, the substrate processing method includes providing in a plasma processing chamber a substrate containing a first material containing silicon nitride and a second material that is different from the first material, forming a plasma-excited process gas containing NF 3 and O 2 , and exposing the substrate to the plasma-excited process gas to selectively etch the first material relative to the second material. According to one embodiment, the second material may be selected from the group consisting of Si, SiO 2 , and a combination thereof.
摘要翻译：本发明的实施例提供了用于相对于用于半导体制造中的其他层的选择性SiN蚀刻的衬底处理方法。根据一个实施例，衬底处理方法包括在等离子体处理室中提供衬底，该衬底包含含有氮化硅的第一材料和不同于第一材料的第二材料，从而形成包含NF 3的等离子体激发处理气体以及将衬底暴露于等离子体激发的工艺气体，以相对于第二材料选择性地蚀刻第一材料。根据一个实施例，第二材料可以选自由Si，SiO 2和它们的组合组成的组。

2. 发明申请

WO2018044727A1 METHOD OF ANISOTROPIC EXTRACTION OF SILICON NITRIDE MANDREL FOR FABRICATION OF SELF-ALIGNED BLOCK STRUCTURES 审中-公开
标题翻译：各向异性氮化硅坩埚的制备自对准砌块结构的方法
公开(公告)号：WO2018044727A1
公开(公告)日：2018-03-08
申请号：PCT/US2017/048689
申请日：2017-08-25
申请人： TOKYO ELECTRON LIMITED , TOKYO ELECTRON U.S. HOLDINGS, INC.
发明人： SHERPA, Sonam D. , RANJAN, Alok
IPC分类号： H01L21/3065 , H01L21/3213 , H01L21/311
CPC分类号： H01L21/0338 , H01J37/32091 , H01J37/321 , H01J37/32128 , H01J37/32715 , H01J2237/334 , H01L21/02164 , H01L21/0217 , H01L21/0332 , H01L21/0335 , H01L21/0337 , H01L21/31116 , H01L21/67069
摘要： A method of preparing a self-aligned block (SAB) structure is described. The method includes providing a substrate having raised features defined by a first material containing silicon nitride and a second material containing silicon oxide formed on side walls of the first material, and a third material containing an organic material covering some of the raised features and exposing some raised features according to a block pattern formed in the third material. The method further includes forming a first chemical mixture by plasma-excitation of a first process gas, and exposing the first material on the substrate to the first chemical mixture. Thereafter, the method includes forming a second chemical mixture by plasma-excitation of a second process gas, and exposing the first material on the substrate to the second plasma-excited process gas to selectively etch the first material relative to the second and third material.
摘要翻译：描述了制备自对准块（SAB）结构的方法。该方法包括提供具有由包含氮化硅的第一材料和形成在第一材料的侧壁上的包含氧化硅的第二材料限定的凸起特征的衬底以及包含有机材料的第三材料，所述有机材料覆盖一些凸起特征并且暴露一些根据在第三材料中形成的块图案提升特征。该方法进一步包括通过第一处理气体的等离子体激发形成第一化学混合物，并且将衬底上的第一材料暴露于第一化学混合物。此后，该方法包括通过第二处理气体的等离子体激发来形成第二化学混合物，并且将衬底上的第一材料暴露于第二等离子体激发的处理气体以相对于第二和第三材料选择性地蚀刻第一材料。

3. 发明申请

WO2018156985A1 METHOD OF ANISOTROPIC EXTRACTION OF SILICON NITRIDE MANDREL FOR FABRICATION OF SELF-ALIGNED BLOCK STRUCTURES 审中-公开
公开(公告)号：WO2018156985A1
公开(公告)日：2018-08-30
申请号：PCT/US2018/019564
申请日：2018-02-23
申请人： TOKYO ELECTRON LIMITED , TOKYO ELECTRON U.S. HOLDINGS, INC.
发明人： SHERPA, Sonam D. , RANJAN, Alok
IPC分类号： H01L21/3065 , H01L21/3213 , H01L21/768 , H01L21/02
摘要： A method of preparing a self-aligned block (SAB) structure is described. The method includes providing a substrate having raised features defined by a first material containing silicon nitride and a second material containing silicon oxide formed on side walls of the first material, and a third material containing an organic material covering some of the raised features and exposing some raised features according to a block pattern formed in the third material. The method further includes forming a first chemical mixture by plasma-excitation of a first process gas containing H and optionally a noble gas, and exposing the first material on the substrate to the first chemical mixture. Thereafter, the method includes forming a second chemical mixture by plasma-excitation of a second process gas containing N, F, O, and optionally a noble element, and exposing the first material on the substrate to the second plasma-excited process gas to selectively etch the first material relative to the second and third material.

4. 发明申请

WO2017210139A1 METHOD OF SILICON EXTRACTION USING A HYDROGEN PLASMA 审中-公开
标题翻译：利用氢等离子体萃取硅的方法
公开(公告)号：WO2017210139A1
公开(公告)日：2017-12-07
申请号：PCT/US2017/034852
申请日：2017-05-26
申请人： TOKYO ELECTRON LIMITED , TOKYO ELECTRON U.S. HOLDINGS, INC.
发明人： SHERPA, Sonam D. , RANJAN, Alok
IPC分类号： H01L21/02 , H01L21/3065
摘要： A method of silicon extraction using a hydrogen plasma has been disclosed in various embodiments. The substrate processing method includes providing a substrate containing a first material consisting of silicon and a second material that is different from the first material, forming a plasma-excited process gas containing H 2 and optionally Ar, and exposing the substrate to the plasma-excited process gas to selectively etch the first material relative to the second material. According to one embodiment, the second material is selected from the group consisting of SiN, SiO 2 , and a combination thereof.
摘要翻译：在各种实施例中已经公开了使用氢等离子体进行硅提取的方法。该衬底处理方法包括：提供包含由硅和不同于第一材料的第二材料组成的第一材料的衬底，形成包含H 2和任选的Ar的等离子体激发处理气体，并且暴露将衬底施加到等离子体激发的工艺气体以相对于第二材料选择性地蚀刻第一材料。根据一个实施例，第二材料选自由SiN，SiO 2和它们的组合组成的组。

5. 发明申请

WO2018136652A1 METHOD OF PREFERENTIAL SILICON NITRIDE ETCHING USING SULFUR HEXAFLUORIDE 审中-公开
公开(公告)号：WO2018136652A1
公开(公告)日：2018-07-26
申请号：PCT/US2018/014266
申请日：2018-01-18
申请人： TOKYO ELECTRON LIMITED , TOKYO ELECTRON U.S. HOLDINGS, INC.
发明人： SHERPA, Sonam D. , RANJAN, Alok
IPC分类号： H01L21/3065 , H01L21/3213 , H01L21/02
摘要： Embodiments of the invention describe substrate processing methods using non-polymerizing chemistry to preferentially etch silicon nitride relative to other materials found in semiconductor manufacturing. According to one embodiment, a processing method includes providing in a plasma processing chamber a substrate containing a first material containing silicon nitride and a second material that is different from the first material, forming a plasma-excited process gas containing SF 6 , and exposing the substrate to the plasma-excited process gas to preferentially etch the first material relative to the second material. In one example, the process gas can contain or consist of SF 6 and Ar. In another example, the second material is selected from the group consisting of Si and SiO 2 .

6. 发明申请

WO2018044713A1 METHOD OF QUASI-ATOMIC LAYER ETCHING OF SILICON NITRIDE 审中-公开
标题翻译：氮化硅的准原子层刻蚀方法
公开(公告)号：WO2018044713A1
公开(公告)日：2018-03-08
申请号：PCT/US2017/048600
申请日：2017-08-25
申请人： TOKYO ELECTRON LIMITED , TOKYO ELECTRON U.S. HOLDINGS, INC.
发明人： SHERPA, Sonam D. , RANJAN, Alok
IPC分类号： H01L21/3065 , H01L21/3213 , H01L21/311
CPC分类号： H01L21/3065 , C01B21/068 , C23C16/0245 , H01L21/0337 , H01L21/31116
摘要： A method of etching is described. The method includes providing a substrate having a first material containing silicon nitride and a second material that is different from the first material, forming a first chemical mixture by plasma-excitation of a first process gas containing H and optionally a noble gas, and exposing the first material on the substrate to the first chemical mixture. Thereafter, the method includes forming a second chemical mixture by plasma-excitation of a second process gas containing N, F, O, and optionally a noble element, and exposing the first material on the substrate to the second plasma-excited process gas to selectively etch the first material relative to the second material.
摘要翻译：描述蚀刻的方法。该方法包括提供衬底，该衬底具有包含氮化硅的第一材料和不同于该第一材料的第二材料;通过等离子体激发含有H和任选的惰性气体的第一处理气体来形成第一化学混合物; 将第一种材料置于第一化学混合物上。此后，该方法包括通过等离子体激发包含N，F，O和任选的贵金属元素的第二处理气体，并且将衬底上的第一材料暴露于第二等离子体激发的处理气体以选择性地形成第二化学混合物蚀刻相对于第二材料的第一材料。

7. 发明申请

WO2018156975A1 METHOD OF QUASI-ATOMIC LAYER ETCHING OF SILICON NITRIDE 审中-公开
公开(公告)号：WO2018156975A1
公开(公告)日：2018-08-30
申请号：PCT/US2018/019551
申请日：2018-02-23
申请人： TOKYO ELECTRON LIMITED , TOKYO ELECTRON U.S. HOLDINGS, INC.
发明人： SHERPA, Sonam D. , RANJAN, Alok
IPC分类号： H01L21/3065 , H01L21/3213 , H01L21/311
摘要： A method of etching is described. The method includes providing a substrate having a first material containing silicon nitride and a second material that is different from the first material, forming a first chemical mixture by plasma-excitation of a first process gas containing H and optionally a noble gas, and exposing the first material on the substrate to the first chemical mixture. Thereafter, the method includes forming a second chemical mixture by plasma-excitation of a second process gas containing S and F, and optionally a noble element, and exposing the first material on the substrate to the second plasma-excited process gas to selectively etch the first material relative to the second material.

8. 发明申请

WO2017210141A1 METHOD OF SIDEWALL IMAGE TRANSFER 审中-公开
标题翻译：侧壁图像传输方法
公开(公告)号：WO2017210141A1
公开(公告)日：2017-12-07
申请号：PCT/US2017/034868
申请日：2017-05-26
申请人： TOKYO ELECTRON LIMITED , TOKYO ELECTRON U.S. HOLDINGS, INC.
发明人： RANJAN, Alok , SHERPA, Sonam D.
IPC分类号： H01L21/027 , H01L21/3065 , H01L21/311 , H01L21/3213 , G03F7/20
摘要： According to one embodiment, a substrate processing method includes providing a substrate containing Si raised features, depositing a conformal film on the Si raised features, and performing a spacer etch process that removes horizontal portions of the conformal film while substantially leaving vertical portions of the conformal film to form sidewall spacers on the Si raised features, the performing including a) exposing the substrate to a plasma-excited first process gas consisting of H2 gas and optionally an inert gas, and b) exposing the substrate to a plasma-excited second process gas containing i) NF 3 , O 2 , H 2 , and Ar, ii) NF 3 , O 2 , and H 2 , iii) NF 3 and O 2 , NF 3 , O 2 , and Ar, iv) NF 3 and H 2 , or v) NF 3 , H 2 , and Ar. The method further includes removing the Si raised features while maintaining the sidewall spacers on the substrate. The removing may be performed using steps a) and b).
摘要翻译：根据一个实施例，一种衬底处理方法包括：提供包含Si凸起特征的衬底;在Si凸起特征上沉积共形膜;以及执行间隔体蚀刻工艺，去除共形膜的水平部分同时基本上离开所述保形膜的垂直部分以在所述Si凸起特征上形成侧壁间隔物，所述方法包括a）将所述衬底暴露于由H 2气和任选的惰性气体组成的等离子体激发的第一处理气体，以及b）衬底到包含i）NF 3，O 2，H 2和Ar的等离子体激发的第二工艺气体，ii）NF _{3 ，H _{2 和Ar。该方法还包括去除Si凸起特征，同时保持衬底上的侧壁间隔物。可以使用步骤a）和b）执行移除。}}

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