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1. 发明申请

WO2022023260A1 METAL COMPLEXES OF 3-(2,3,5-TRIFLUORO-6-(TRIFLUOROMETHYL)PYRIDIN-4-YL)PENTANE-2,4-DIONE AND SIMILAR LIGANDS AS SEMICONDUCTOR MATERIALS FOR USE IN ELECTRONIC DEVICES 审中-公开
公开(公告)号：WO2022023260A1
公开(公告)日：2022-02-03
申请号：PCT/EP2021/070847
申请日：2021-07-26
申请人： NOVALED GMBH
发明人： UVAROV, Vladimir , NÜLLEN, Max Peter , HEGGEMANN, Ulrich , HUMMERT, Markus , WILLMANN, Steffen , LUSCHTINETZ, Regina
IPC分类号： C07D213/61 , C07D209/86 , C09K11/06 , C09B57/00 , C09B57/10 , H01L31/00 , H01L31/04 , H01L51/00 , H01L51/50 , H01M14/00
摘要： The present invention relates to compound represented by Formula (I) wherein M is a metal; L is a charge-neutral ligand, which coordinates to the metal M; n is an integer selected from 1 to 4, which corresponds to the oxidation number of M; m is an integer selected from 0 to 2; R1, R2 and R3 are substituents, wherein at least one R1, R2 and/or R3 is selected from a substituted C2 to C24 heteroaryl group, wherein at least one substituent is selected from halogen, F, Cl, CN, partially or fully fluorinated C1 to C6 alkyl, partially or fully fluorinated C1 to C6 alkoxy. The present invention also relates to a semiconductor material comprising at least one compound of formula (I), an semiconductor layer comprising at least one compound of formula (I) and an electronic device comprising at least one compound of formula (I). Exemplary compounds are e.g. metal complexes of 3-(2,3,5- trifluoro-6-(trifluoromethyl)pyridin-4-yl)pentane-2,4-dione, such as e.g. tris(((Z)-4-oxo-3-(2,3,5-trifluoro-6-(trifluoromethyl)pyridin-4- yl)pent-2-en-2-yl)oxy)iron and bis(((Z)-4-oxo-3-(2,3,5-trifluoro-6- (trifluoromethyl)pyridin-4-yl)pent-2-en-2-yl)oxy)copper.

2. 发明申请

WO2020007741A1 ELECTRONIC DEVICE, METHOD FOR PREPARING THE SAME AND A DISPLAY DEVICE COMPRISING THE SAME 审中-公开
公开(公告)号：WO2020007741A1
公开(公告)日：2020-01-09
申请号：PCT/EP2019/067385
申请日：2019-06-28
申请人： NOVALED GMBH
发明人： HUMMERT, Markus , SENKOWSKYY, Volodymyr
IPC分类号： H01L51/54
摘要： The present invention relates to an electronic device comprising, between a first electrode and a second electrode, at least one first semiconducting layer, the first semiconducting layer comprising (i) at least one first charge transport matrix compound consisting of covalently bound atoms and (ii) at least one electrical dopant, wherein the electrical dopant comprises at least one metal cation and at least one anionic ligand consisting of covalently bound atoms, wherein the anionic ligand comprises at least two boron atoms linked to each other via a covalent bond, wherein the first semiconducting layer is a charge injection layer, a part of a charge generating layer, a charge transport layer or two or more thereof, method for preparing the same and a display device comprising the same.

3. 发明申请

WO2018150048A1 ELECTRONIC SEMICONDUCTING DEVICE AND METHOD FOR PREPARING THE ELECTRONIC SEM-ICONDUCTING DEVICE 审中-公开
公开(公告)号：WO2018150048A1
公开(公告)日：2018-08-23
申请号：PCT/EP2018/054154
申请日：2018-02-20
申请人： NOVALED GMBH
发明人： HEGGEMANN, Ulrich , HUMMERT, Markus , ROSENOW, Thomas , FURNO, Mauro
IPC分类号： H01L51/54 , H01L51/46 , H01L51/50
摘要： The present invention relates to an electronic device comprising between a first electrode and a second electrode at least one first hole transport layer, wherein the first hole transport layer comprises (i) at least one first hole transport matrix compound consisting of covalently bound atoms and (ii) at least one electrical p-dopant selected from metal sate and from electrically neutral metal complexes comprising a metal cation and a at least one anion and/or at least one anionic ligand consisting of at least 4 covalently bound atoms, wherein the metal cation of the electrical p-dopant is selected from alkali metals; alkaline earth metals, Pb, Me, Fe, Co, Ni, Zn, Cd; rare earth metals in oxidation state (II) or (III); Al, Ga, In; and from Sn, Ti, Zr, Hf, V, Nb, Ta, Cr, Mo and W in oxidation state (TV) or less; provided that a) p-dopants comprising anion or anionic ligand having generic formula (la) or (lb) wherein A 1 , A 2 , A 3 and A 4 are independently selected from CO, SO 2 or POR 1 ; R 1 = electron withdrawing group selected from the group comprising halide, nitrile, halogenated or perhalogenated C 1 to C 20 alkyl, halogenated or perhalogenated C 6 to C 20 aryl, or halogenated or perhalogenated heteroaryl with 5 to 20 ring-forming atoms; B 1 , B 2 , B 3 and B 4 are same or independently selected from substituted or unsubstituted C 1 to C 20 alkyl, substituted or unsubstituted C 1 to C 20 heteroalkyl, substituted or unsubstituted C 6 to C 20 aryl, substituted or unsubstituted C 5 to C 20 heteroaryl, or B 1 and B 2 form a ring; and b) p-dopants consisting of Li cation and an anion selected from perchlorate and tetrafluoroborate are excluded, and the first hole transport layer comprises a sub-layer, wherein the electrical dopant is comprised in an amount, by weight and/or by volume, exceeding the total amount of other components which may additionally be comprised in the sublayer, and a method for preparing the same.

4. 发明申请

WO2018150006A1 ELECTRONIC SEMICONDUCTING DEVICE, METHOD FOR PREPARING THE ELECTRONIC SEMICONDUCTING DEVICE AND COMPOUND 审中-公开
公开(公告)号：WO2018150006A1
公开(公告)日：2018-08-23
申请号：PCT/EP2018/053954
申请日：2018-02-16
申请人： NOVALED GMBH
发明人： HEGGEMANN, Ulrich , HUMMERT, Markus
IPC分类号： H01L51/50
摘要： The present invention relates to an electronic device comprising between a first electrode and a second electrode at least one first semiconducting layer comprising: (i) at least one first hole transport matrix compound consisting of covalently bound atoms and (ii) at least one electrical p-dopant selected from metal borate complexes, wherein the metal borate complex consists of at least one metal cation and at least one anionic ligand consisting of at least six covalently bound atoms which comprises at least one boron atom, wherein the first semiconducting layer is a hole injection layer, a hole-injecting part of a charge generating layer or a hole transport layer, a method for preparing the same and a respective metal borate compound.

5. 发明申请

WO2021123064A1 ORGANIC ELECTRONIC DEVICE COMPRISING A COMPOUND OF FORMULA (1), DISPLAY DEVICE COMPRISING THE ORGANIC ELECTRONIC DEVICE AS WELL AS COMPOUNDS OF FORMULA (1) FOR USE IN ORGANIC ELECTRONIC DEVICES 审中-公开
公开(公告)号：WO2021123064A1
公开(公告)日：2021-06-24
申请号：PCT/EP2020/086889
申请日：2020-12-17
申请人： NOVALED GMBH
发明人： UVAROV, Vladimir , HUMMERT, Markus , HEGGEMANN, Ulrich
IPC分类号： H01L51/54 , H01L51/0091 , H01L51/5088
摘要： The present invention relates to an organic electronic device comprising a semiconductor layer which comprises a compound of formula (1).

6. 发明申请

WO2018220218A1 ORGANIC ELECTRONIC DEVICE AND METHOD FOR PRODUCING THE ORGANIC ELECTRONIC DEVICE 审中-公开
公开(公告)号：WO2018220218A1
公开(公告)日：2018-12-06
申请号：PCT/EP2018/064541
申请日：2018-06-02
申请人： NOVALED GMBH
发明人： ROSENOW, Thomas , HUMMERT, Markus , CANZLER, Tobias
IPC分类号： H01L51/54 , H01L51/52
CPC分类号： H01L51/0047 , H01L51/5278
摘要： The disclosure refers to an organic electronic device, comprising a first electrode (3); a second electrode (4); and a charge generation layer (5) arranged between the first and the second electrode (3, 4), the charge generation layer (5) comprising a n-type sub-layer (5a) comprising at least one redox n-dopant and arranged closer to the first electrode, and a p- type sub-layer (5b) comprising a fullerene compound dopant and arranged closer to the second electrode; wherein the fullerene compound comprises at least one electron withdrawing substituent selected from F, CI, Br, I, CN, halogen-substituted and / or CM- substituted group containing 1 to 20 carbon atoms. Further, a method for producing an organic electronic device is provided.

7. 发明申请

WO2018150050A1 ACTIVE OLED DISPLAY, METHOD FOR PREPARING AN ACTIVE OLED DISPLAY AND COMPOUND 审中-公开
公开(公告)号：WO2018150050A1
公开(公告)日：2018-08-23
申请号：PCT/EP2018/054160
申请日：2018-02-20
申请人： NOVALED GMBH
发明人： HEGGEMANN, Ulrich , HUMMERT, Markus
IPC分类号： H01L51/54 , H01L27/32
摘要： The present invention relates to a display device comprising - a plurality of OLED pixels comprising at least two OLED pixels, the OLED pixels comprising an anode, a cathode, and a stack of organic layers, wherein the stack of organic layers - is arranged between and in contact with the cathode and the anode, and - comprises a first electron transport layer, a first hole transport layer, and a first light emitting layer provided between the first hole transport layer and the first electron transport layer, and - a driving circuit configured to separately driving the pixels of the plurality of OLED pixels, wherein, for the plurality of OLED pixels, the first hole transport layer is provided in the stack of organic layers as a common hole transport layer shared by the plurality of OLED pixels, and the first hole transport layer comprises (i) at least one first hole transport matrix compound consisting of covalently bound atoms and (ii) at least one electrical p-dopant selected from metal salts and from electrically neutral metal complexes comprising a metal cation and at least one anion and/or at least one anionic ligand consisting of at least 4 covalently bound atoms, wherein the metal cation of the electrical p-dopant is selected from alkali metals; alkaline earth metals, Pb, Mn, Fe, Co, Ni, Zn, Cd; rare earth metals in oxidation state (II) or (III); Al, Ga, In; and from Sn, Ti, Zr, Hf, V, Nb, Ta, Cr, Mo and W in oxidation state (IV) or less, a method for preparing the display device and a chemical compound for use therein.

8. 发明申请

WO2017029370A1 METAL AMIDES FOR USE AS HIL FOR AN ORGANIC LIGHT-EMITTING DIODE (OLED) 审中-公开
标题翻译：用于有机发光二极管（OLED）的金属辅助剂
公开(公告)号：WO2017029370A1
公开(公告)日：2017-02-23
申请号：PCT/EP2016/069638
申请日：2016-08-18
申请人： NOVALED GMBH
发明人： HUMMERT, Markus , ROSENOW, Thomas
IPC分类号： H01L51/54
CPC分类号： H01L51/5088 , H01L51/005 , H01L51/0079 , H01L51/0091
摘要： The present invention relates to metal amides of general Formula Ia and for their use as hole injection layer (HIL) for an Organic light-emitting diode (OLED), and a method of manufacturing Organic light-emitting diode (OLED) comprising an hole injection layer containing a metal amide of general Formula Ia.
摘要翻译：本发明涉及通式Ia的金属酰胺及其用作有机发光二极管（OLED）的空穴注入层（HIL）的方法，以及制造包含空穴注入的有机发光二极管（OLED）的方法层包含通式Ia的金属酰胺。

9. 发明申请

WO2021191255A1 ORGANIC ELECTRONIC DEVICE, ORGANIC SEMICONDUCTING MATERIAL, A TRIOXATRIBORINANE COMPOUND AND THE USE THEREOF 审中-公开
公开(公告)号：WO2021191255A1
公开(公告)日：2021-09-30
申请号：PCT/EP2021/057534
申请日：2021-03-24
申请人： NOVALED GMBH , TU CLAUSTHAL
发明人： NÜLLEN, Max Peter , HUMMERT, Markus , HARTMANN, Horst , KAUFMANN, Dieter E. , TENGHO TOGUEM, Serge-Mithérand
IPC分类号： H01L51/54 , H01L51/008 , H01L51/506
摘要： The present invention relates to an organic electronic device, an organic semiconducting material and a 1,3,5-trioxatriborinane-containg compound.

10. 发明申请

WO2021151958A1 AN ORGANIC ELECTRONIC DEVICE COMPRISING A HOLE INJECTION LAYER THAT COMPRISES A HOLE TRANSPORT COMPOUND 审中-公开
公开(公告)号：WO2021151958A1
公开(公告)日：2021-08-05
申请号：PCT/EP2021/051884
申请日：2021-01-27
申请人： NOVALED GMBH
发明人： ROSENOW, Thomas , JANKUS, Vygintas , HUMMERT, Markus , PARK, Mo Jin , UVAROV, Vladimir , STEUDEL, Annette
IPC分类号： H01L51/50 , H01L51/00
摘要： The present invention relates to an organic electronic device comprising an anode layer, a cathode layer and a hole injection layer, wherein the hole injection layer is arranged between the anode layer and the cathode layer and wherein the hole injection layer comprises a hole transport compound and a metal complex.

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