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    • 3. 发明申请
    • WAFER HEATING AND TEMPERATURE CONTROL BY BACKSIDE FLUID INJECTION
    • 背面流体注射的加热和温度控制
    • WO2006065532A3
    • 2007-04-19
    • PCT/US2005043256
    • 2005-11-29
    • LAM RES CORPMOORING BENPARKS JOHNHYMES DIANE J
    • MOORING BENPARKS JOHNHYMES DIANE J
    • C23C16/00C23F1/00
    • H01L21/67109
    • In one of the many embodiments, an apparatus for processing a substrate is provided which includes a substrate processing chamber where the substrate is positioned within the substrate processing chamber so the substrate at least partially separates the substrate processing chamber into a first chamber and a second chamber. The apparatus further includes a first chamber inlet configured to input a first fluid of a first temperature into the first chamber at a first pressure and a second chamber inlet configured to input a second fluid of a second temperature into the second chamber at a second pressure wherein the first pressure and the second pressure are substantially equal. The second temperature is capable of being utilized to manage substrate temperature.
    • 在许多实施例中的一个实施例中,提供了一种用于处理衬底的装置,其包括衬底处理室,其中衬底位于衬底处理室内,使得衬底至少部分地将衬底处理室分离成第一腔室和第二腔室 。 该装置还包括第一室入口,其构造成在第一压力下将第一温度的第一流体输入到第一室中,并且第二室入口构造成在第二压力下将第二温度的第二流体输入到第二室中, 第一压力和第二压力基本相等。 第二个温度可以用来管理衬底温度。
    • 5. 发明申请
    • CHAMBER AND ASSOCIATED METHODS FOR WAFER PROCESSING
    • 用于波浪加工的室和相关方法
    • WO2004093166A2
    • 2004-10-28
    • PCT/US2004008994
    • 2004-03-23
    • LAM RES CORPPARKS JOHN
    • PARKS JOHN
    • B08B7/00H01L21/00H01L21/683H01L21/687
    • H01L21/67126B08B7/0021H01L21/67051H01L21/67109H01L21/67751H01L21/6838
    • A wafer processing chamber is provided for allowing a fluid flow and a fluid pressure within the chamber to be controlled in a variable manner. The chamber utilizes removable plates that can be configured to control the fluid flow and the fluid pressure in an inner volume within the chamber. Also, the removable plates can be used to separate the inner volume within the chamber from an outer volume within the chamber. Additionally, a wafer clamping apparatus is provided for use in the chamber. The wafer clamping apparatus uses a pressure differential between a top surface and a bottom surface of the wafer to pull the wafer toward a wafer support structure in contact with the wafer bottom surface, whereby the wafer is secured and maintained in an immobile state. Furthermore, high-pressure chamber configurations are provided.
    • 提供晶片处理室以允许以可变的方式控制腔室内的流体流动和流体压力。 该室利用可移动的板,其可被构造成控制腔内的内部体积中的流体流动和流体压力。 而且,可拆卸的板可用于将腔室内的体积与室内的外部容积分开。 此外,提供晶片夹紧装置用于室中。 晶片夹紧装置使用晶片的顶表面和底表面之间的压力差将晶片拉向与晶片底表面接触的晶片支撑结构,由此晶片被固定并保持在固定状态。 此外,还提供了高压室配置。