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1. 发明申请

WO2019023292A1 MULTILAYER FILM METROLOGY USING AN EFFECTIVE MEDIA APPROXIMATION 审中-公开
公开(公告)号：WO2019023292A1
公开(公告)日：2019-01-31
申请号：PCT/US2018/043592
申请日：2018-07-25
申请人： KLA-TENCOR CORPORATION
发明人： NEIL, Mark , SUSHCHIK, Mikhail , MALKOVA, Natalia
IPC分类号： G01B11/06
摘要： A metrology system includes a controller coupled to a detector to generate a detection signal based on the reflection of an illumination beam from a multilayer film stack. The multilayer film stack may include one or more zones with a repeating pattern of two or more materials. The controller may generate a model of reflection of the illumination beam by modeling the zones as thick films having zone thicknesses and effective permittivity values using an effective medium model relating the effective permittivity values of the zones to permittivity values and volume fractions of constituent materials. The controller may further determine values of the zone thicknesses and the volume fractions using a regression of the detection signal based on the effective medium model and further determine average thickness values of the constituent materials based on the number of films, the zone thicknesses, the volume fractions, and the effective permittivity values.

2. 发明申请

WO2016187579A1 MULTI-OSCILLATOR, CONTINUOUS CODY-LORENTZ MODEL OF OPTICAL DISPERSION 审中-公开
标题翻译：多重振荡器，光学分散的连续编码LORENTZ模型
公开(公告)号：WO2016187579A1
公开(公告)日：2016-11-24
申请号：PCT/US2016/033613
申请日：2016-05-20
申请人： KLA-TENCOR CORPORATION
发明人： MALKOVA, Natalia , POSLAVSKY, Leonid
IPC分类号： G01N21/21 , H01L21/66 , G01N21/95 , G01N21/84
CPC分类号： G01R31/308 , G01N21/211 , G01N21/8422 , G01N21/9501 , G01N2021/213 , G01N2201/12 , G01R31/44 , H01L22/12 , H01L22/20
摘要： Methods and systems for monitoring band structure characteristics and predicting electrical characteristics of a sample early in a semiconductor manufacturing process flow are presented herein. High throughput spectrometers generate spectral response data from semiconductor wafers. In one example, the measured optical dispersion is characterized by a Gaussian oscillator, continuous Cody-Lorentz model. The measurement results are used to monitor band structure characteristics, including band gap and defects such as charge trapping centers, exciton states, and phonon modes in high-K dielectric layers and embedded nanostructures. The Gaussian oscillator, continuous Cody-Lorentz model can be generalized to include any number of defect levels. In addition, the shapes of absorption defect peaks may be represented by Lorentz functions, Gaussian functions, or both. These models quickly and accurately represent experimental results in a physically meaningful manner. The model parameter values can be subsequently used to gain insight and control over a manufacturing process.
摘要翻译：本文介绍了在半导体制造工艺流程中早期监测样品结构特征和预测样品电特性的方法和系统。高通量光谱仪从半导体晶圆产生光谱响应数据。在一个示例中，测量的光学色散的特征在于高斯振荡器，连续的Cody-Lorentz模型。测量结果用于监测高K电介质层和嵌入式纳米结构中的带结构特征，包括带隙和缺陷，例如电荷俘获中心，激子态和声子模式。高斯振荡器，连续Cody-Lorentz模型可以推广到包括任何数量的缺陷水平。此外，吸收缺陷峰的形状可以由洛伦兹函数，高斯函数或两者表示。这些模型以物理上有意义的方式快速准确地表示实验结果。模型参数值可以随后用于获得对制造过程的洞察和控制。

3. 发明申请

WO2019113395A1 MEASUREMENT METHODOLOGY OF ADVANCED NANOSTRUCTURES 审中-公开
公开(公告)号：WO2019113395A1
公开(公告)日：2019-06-13
申请号：PCT/US2018/064369
申请日：2018-12-07
申请人： KLA-TENCOR CORPORATION
发明人： NGUYEN, Manh , ATKINS, Phillip , KUZNETSOV, Alexander , LEE, Lie-Quan Rich , MALKOVA, Natalia , AOYAGI, Paul , SUSHCHIK, Mikhail , CHOUAIB, Houssam , HU, Dawei
IPC分类号： H01L21/66
摘要： A parameterized geometric model of a structure can be determined based on spectra from a wafer metrology tool. The structure can have geometry-induced anisotropic effects. Dispersion parameters of the structure can be determined from the parameterized geometric model. This can enable metrology techniques to measure nanostructures that have geometries and relative positions with surrounding structures that induce non-negligible anisotropic effects. These techniques can be used to characterize process steps involving metal and semiconductor targets in semiconductor manufacturing of, for example, FinFETs or and gate-all-around field-effect transistors.

4. 发明申请

WO2019023288A1 MULTILAYER FILM METROLOGY USING AN EFFECTIVE MEDIA APPROXIMATION 审中-公开
公开(公告)号：WO2019023288A1
公开(公告)日：2019-01-31
申请号：PCT/US2018/043582
申请日：2018-07-25
申请人： KLA-TENCOR CORPORATION
发明人： NEIL, Mark , SUSHCHIK, Mikhail , MALKOVA, Natalia
IPC分类号： G01B11/06
摘要： A metrology system includes a controller coupled to a detector to generate a detection signal based on the reflection of an illumination beam from a multilayer film stack. The multilayer film stack may include one or more zones with a repeating pattern of two or more materials. The controller may generate a model of reflection of the illumination beam by modeling the zones as thick films having zone thicknesses and effective permittivity values using an effective medium model relating the effective permittivity values of the zones to permittivity values and volume fractions of constituent materials. The controller may further determine values of the zone thicknesses and the volume fractions using a regression of the detection signal based on the effective medium model and further determine average thickness values of the constituent materials based on the number of films, the zone thicknesses, the volume fractions, and the effective permittivity values.

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