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1. 发明申请

WO2011129858A1 LIGHT-EMITTING DEVICES WITH VERTICAL LIGHT-EXTRACTION MECHANISM AND METHOD FOR FABRICATING THE SAME 审中-公开
标题翻译：具有垂直光提取机理的发光装置及其制造方法
公开(公告)号：WO2011129858A1
公开(公告)日：2011-10-20
申请号：PCT/US2010/059940
申请日：2010-12-10
申请人： INVENLUX CORPORATION , YAN, Chunhui , ZHANG, Jianping
发明人： YAN, Chunhui , ZHANG, Jianping
IPC分类号： H01L33/20 , H01L33/22
CPC分类号： H01L33/24 , H01L33/08
摘要： A light-emitting device comprises a lattice structure to minimize the horizontal waveguide effect by reducing light traveling distance in the light-absorption medium of the light-emitting devices, and to enhance light extraction from the light-emitting layer. The lattice structure includes sidewalls and/or rods embedded in the light-absorption medium and dividing the light- absorption medium into a plurality of area units. The area units are completely isolated or partially separated from each other by the sidewalls. Also provided is a method of fabricating a light-emitting device that comprises a lattice structure, which lattice structure includes sidewalls and/or rods embedded in the light- absorption medium and dividing the light- absorption medium into a plurality of area units.
摘要翻译：发光器件包括通过减少发光器件的光吸收介质中的光行进距离来最小化水平波导效应的晶格结构，并且增强从发光层的光提取。晶格结构包括嵌入光吸收介质中的侧壁和/或棒，并将光吸收介质分成多个区域单元。区域单元被侧壁完全隔离或部分地分开。还提供了一种制造包括晶格结构的发光器件的方法，该晶格结构包括嵌入在光吸收介质中的侧壁和/或棒，并将光吸收介质分成多个区域单元。

2. 发明申请

WO2012071052A1 METHOD FOR FABRICATING VERTICAL LIGHT EMITTING DEVICES AND SUBSTRATE ASSEMBLY FOR THE SAME 审中-公开
标题翻译：用于制造垂直发光装置的方法和用于其的底板组件
公开(公告)号：WO2012071052A1
公开(公告)日：2012-05-31
申请号：PCT/US2010/060137
申请日：2010-12-13
申请人： INVENLUX CORPORATION , ZHANG, Jianping , YAN, Chunhui
发明人： ZHANG, Jianping , YAN, Chunhui
IPC分类号： H01L33/20 , H01L33/22
CPC分类号： H01L33/0079 , H01L33/007 , H01L33/20 , H01L33/22 , H01L33/42
摘要： In a method for fabricating a vertical light emitting device, the separation or lift-off of the substrate from the light emitting diode structure formed thereon is facilitated by forming voids at the interface between the substrate and the light emitting diode structure where the separation or lift-off occurs. A substrate assembly contains a substrate and an epitaxial layer, and voids are formed at the interface between the substrate and the epitaxial layer in a controlled manner. A light emitting diode structure is then formed on the epitaxial layer, followed by attaching the light emitting diode structure to a superstrate, separating the substrate from the epitaxial layer, and forming a conductive layer and a contact pad in place of the substrate, so as to form a vertical light emitting device.
摘要翻译：在制造垂直发光器件的方法中，通过在衬底和发光二极管结构之间的界面处形成空隙来促进衬底与其上形成的发光二极管结构的分离或剥离，其中分离或升高 - 发生。衬底组件包含衬底和外延层，并且以受控的方式在衬底和外延层之间的界面处形成空隙。然后在外延层上形成发光二极管结构，然后将发光二极管结构连接到衬底，将衬底与外延层分离，并形成导电层和接触焊盘代替衬底，以便以形成垂直发光装置。

3. 发明申请

WO2012023954A1 LIGHT-EMITTING DEVICES WITH SUBSTRATE COATED WITH OPTICALLY DENSER MATERIAL 审中-公开
标题翻译：具有涂覆有光学传感器材料的衬底的发光器件
公开(公告)号：WO2012023954A1
公开(公告)日：2012-02-23
申请号：PCT/US2010/059951
申请日：2010-12-10
申请人： INVENLUX CORPORATION , YAN, Chunhui , ZHANG, Jianping
发明人： YAN, Chunhui , ZHANG, Jianping
IPC分类号： H01L33/10 , H01L33/38
CPC分类号： H01L33/44 , H01L2224/48091 , H01L2224/48247 , H01L2224/48257 , H01L2224/49107 , H01L2933/0091 , H01L2924/00014
摘要： A light-emitting device includes a transparent substrate with a light emitting structure formed on one side of the substrate and a transparent layer formed on the opposing side of the substrate. The refractive index of the transparent layer is greater than the refractive index of the substrate. A light-emitting device includes a package cup having a reflective sidewall and a light emission surface and a light emitting diode (LED) embedded in the package cup. The LED comprises a transparent substrate and a transparent layer formed on the substrate. The reflective sidewall has a first portion in a central area of the package cup and a second portion in a peripheral area of the package cup, the first portion reflects light emitted from the transparent layer to the second portion and, then, the second portion further reflects the light received from the first portion to the light emission surface of the package cup.
摘要翻译：发光装置包括具有形成在基板的一侧上的发光结构的透明基板和形成在基板的相对侧上的透明层。透明层的折射率大于衬底的折射率。发光装置包括具有反射侧壁和发光表面的封装杯和嵌入在封装杯中的发光二极管（LED）。 LED包括透明基板和形成在基板上的透明层。反射侧壁具有在封装杯的中心区域中的第一部分和封装杯的周边区域中的第二部分，第一部分将从透明层发射的光反射到第二部分，然后将第二部分进一步反射将从第一部分接收的光反射到封装杯的发光表面。

4. 发明申请

WO2012030360A1 LIGHT-EMITTING DEVICES WITH TWO-DIMENSIONAL COMPOSITION-FLUCTUATION ACTIVE-REGION AND METHOD FOR FABRICATING THE SAME 审中-公开
标题翻译：具有二维组成波动活性区域的发光装置及其制造方法
公开(公告)号：WO2012030360A1
公开(公告)日：2012-03-08
申请号：PCT/US2010/059954
申请日：2010-12-10
申请人： INVENLUX CORPORATION , ZHANG, Jianping , YAN, Chunhui
发明人： ZHANG, Jianping , YAN, Chunhui
IPC分类号： H01L33/16 , H01L33/20 , H01L33/22
CPC分类号： H01L33/007 , H01L33/08 , H01L33/22
摘要： The present invention discloses a light-emitting device with a two-dimensional composition-fluctuation active-region obtained via two-dimensional thermal conductivity modulation of the material lying below the active-region. The thermal conductivity modulation is achieved via formation of high-density pores in the material below the active- region. The fabrication method of the light-emitting device and material with the high-density pores are also disclosed.
摘要翻译：本发明公开了一种具有二维成分波动活性区域的发光装置，该二维成分波动有源区通过二维热导率调制的材料位于活性区域之下。通过在活性区域下方的材料中形成高密度孔来实现热导率调节。还公开了发光器件的制造方法和具有高密度孔的材料。

5. 发明申请

WO2012015455A1 THREE-DIMENSIONAL LIGHT-EMITTING DEVICES AND METHOD FOR FABRICATING THE SAME 审中-公开
标题翻译：三维发光装置及其制造方法
公开(公告)号：WO2012015455A1
公开(公告)日：2012-02-02
申请号：PCT/US2010/059949
申请日：2010-12-10
申请人： INVENLUX CORPORATION , YAN, Chunhui , ZHANG, Jianping , LIU, Ying , ZHAO, Fanghai , MA, Kevin
发明人： YAN, Chunhui , ZHANG, Jianping , LIU, Ying , ZHAO, Fanghai , MA, Kevin
IPC分类号： H01L33/08 , H01L33/20
CPC分类号： H01L33/08 , H01L27/153 , H01L33/007 , H01L33/20 , H01L33/24 , H01L33/32
摘要： A three-dimensional LED structure with vertically displaced active -region includes at least two groups of vertically displaced surfaces on a non-planar substrate. The first group of surfaces are separated from the second group of surfaces by a vertical distance in the growth direction of the LED structure. The first group of surfaces are connected to the second group of surfaces by sidewalls, respectively. The sidewalls can be inclined or vertical and have a sufficient height so that a layer such as an n-type layer, an active -region, or a p-type layer in a first LED structure deposited on the first group of surfaces and a corresponding layer such as an n-type layer, an active-region, or a p-type layer in a second LED structure deposited on the second group of surfaces are separated by the sidewalls. The two groups of surfaces may be vertically displaced from each other in certain areas of an LED chip, while merge into an integral surface in other areas. A method for fabricating the three-dimensional LED structure is also provided.
摘要翻译：具有垂直移位的活性区域的三维LED结构在非平面基底上包括至少两组垂直移位的表面。第一组表面在LED结构的生长方向上与第二组表面分离一个垂直距离。第一组表面分别通过侧壁连接到第二组表面。侧壁可以是倾斜的或垂直的并且具有足够的高度，使得沉积在第一组表面上的第一LED结构中的诸如n型层，活性区域或p型层的层和相应的在第二组表面上沉积的第二LED结构中的诸如n型层，有源区或p型层的层被侧壁隔开。两组表面可以在LED芯片的某些区域中彼此垂直位移，同时在其他区域中合并成一个整体表面。还提供了一种用于制造三维LED结构的方法。

6. 发明申请

WO2012145412A1 LARGE-AREA LIGHT-EMITTING DEVICE AND METHOD FOR FABRICATING THE SAME 审中-公开
标题翻译：大面积发光装置及其制造方法
公开(公告)号：WO2012145412A1
公开(公告)日：2012-10-26
申请号：PCT/US2012/034102
申请日：2012-04-18
申请人： INVENLUX LIMITED , ZHANG, Jianping , YAN, Chunhui
发明人： ZHANG, Jianping , YAN, Chunhui
IPC分类号： H01L33/36 , H01L33/38 , H01L33/62
CPC分类号： H01L33/38 , H01L33/40 , H01L33/46
摘要： A Ill-nitride light emitting device having a substrate with a conductive grid made of conductive lines formed thereon. An active-region is sandwiched between an n-type layer and a p-type layer forming an LED structure, and the conductive grid is in ohmic contact with the n-type layer. Also provided is a method for fabricating the same.
摘要翻译：一种III族氮化物发光器件，其具有由其上形成有导电线的导电栅极的基板。有源区夹在n型层和形成LED结构的p型层之间，导电栅与n型层欧姆接触。还提供了制造该方法的方法。

7. 发明申请

WO2012145410A1 LIGHT-EMITTING DEVICE WITH LOW FORWARD VOLTAGE AND METHOD FOR FABRICATING THE SAME 审中-公开
标题翻译：具有低向前电压的发光装置及其制造方法
公开(公告)号：WO2012145410A1
公开(公告)日：2012-10-26
申请号：PCT/US2012/034099
申请日：2012-04-18
申请人： INVENLUX LIMITED , ZHANG, Jianping , WANG, Hongmei , YAN, Chunhui
发明人： ZHANG, Jianping , WANG, Hongmei , YAN, Chunhui
IPC分类号： H01L33/14 , H01L33/22
CPC分类号： H01L33/04 , H01L33/14 , H01L33/32 , H01L33/385
摘要： A light emitting device with reduced forward voltage Vf by utilizing the excellent lateral conduction of two-dimensional electron gas (2DEG) and two-dimensional hole gas (2DHG) structure and, more specifically, by improving the vertical conduction of 2DEG and 2DHG structure by means of vertical conductive passages formed in 2DEG and 2DHG structure. The conductive passages are formed via discontinuities in 2DEG and 2DHG structure. The discontinuities can be in the form of openings by etching 2DEG or 2DHG structure, or in the form of voids by growing 2DEG or 2DHG structure on a rough surface via epitaxy facet control. The discontinuities can be formed by vertical displacement of 2DEG structure. A method is provided for manufacturing a light emitting device with reduced forward voltage same.
摘要翻译：通过利用二维电子气（2DEG）和二维空穴气体（2DHG）结构优异的横向导通，具有降低的正向电压Vf的发光器件，更具体地，通过改进2DEG和2DHG结构的垂直传导以2DEG和2DHG结构形成的垂直导电通道的装置。导电通道是通过2DEG和2DHG结构的不连续形成的。通过蚀刻2DEG或2DHG结构，或通过在粗糙表面上通过外延小面控制生长2DEG或2DHG结构，以空隙的形式，不连续性可以是开口的形式。可以通过2DEG结构的垂直位移形成不连续性。提供了一种用于制造具有相同的正向电压降低的发光器件的方法。

8. 发明申请

WO2012112725A1 DEFECT-CONTROLLING STRUCTURE FOR EPITAXIAL GROWTH, LIGHT EMITTING DEVICE CONTAINING DEFECT-CONTROLLING STRUCTURE, AND METHOD OF FORMING THE SAME 审中-公开
标题翻译：外延生长缺陷控制结构，含有缺陷控制结构的发光装置及其形成方法
公开(公告)号：WO2012112725A1
公开(公告)日：2012-08-23
申请号：PCT/US2012/025317
申请日：2012-02-15
申请人： INVENLUX LIMITED , ZHANG, Jianping , WANG, Hongmei , YAN, Chunhui
发明人： ZHANG, Jianping , WANG, Hongmei , YAN, Chunhui
IPC分类号： H01L33/12 , H01L21/20
CPC分类号： H01L33/0075 , B82Y10/00 , B82Y30/00 , H01L21/02458 , H01L21/02513 , H01L21/0254 , H01L21/02601 , H01L21/0262 , H01L21/02631 , H01L33/007 , H01L33/025 , H01L33/06 , H01L33/12
摘要： A method for reducing dislocations or other defects in a light emitting device, such as light emitting diode (LED), by in-situ introducing nanoparticles into at least one of a defect-controlling layer, an n-type layer, a p-type layer, and a quantum well of the light emitting device. A light emitting device is provided, and nanoparticles are dispensed in- situ in at least one of a defect-controlling layer, an n-type layer, a p-type layer, and a quantum well of the light emitting device.
摘要翻译：通过将纳米颗粒原位引入到缺陷控制层，n型层，p型中的至少一种中，减少诸如发光二极管（LED）的发光器件中的位错或其它缺陷的方法层和发光器件的量子阱。提供了一种发光器件，并且纳米颗粒在发光器件的缺陷控制层，n型层，p型层和量子阱中的至少一个中被原位分配。

9. 发明申请

WO2011162791A1 LIGHT-EMITTING DEVICES WITH IMPROVED ACTIVE-REGION 审中-公开
标题翻译：具有改进的主动区域的发光装置
公开(公告)号：WO2011162791A1
公开(公告)日：2011-12-29
申请号：PCT/US2010/059945
申请日：2010-12-10
申请人： INVENLUK CORPORATION , YAN, Chunhui , ZHANG, Jianping , LIU, Ying , ZHAO, Fanghai
发明人： YAN, Chunhui , ZHANG, Jianping , LIU, Ying , ZHAO, Fanghai
IPC分类号： H01L33/18
CPC分类号： H01L33/64 , H01L33/06 , H01L33/24
摘要： A light-emitting device comprises an active-region sandwiched between an n-type layer and a p-type layer, that allows lateral carrier injection into the active-region so as to reduce heat generation in the active-region and to minimize additional forward voltage increase associated with bandgap discontinuity. In some embodiments, the active-region is a vertically displaced multiple-quantum-well (MQW) active-region. A method for fabricating the same is also provided.
摘要翻译：发光器件包括夹在n型层和p型层之间的有源区，其允许横向载流子注入到有源区中，以便减少有源区中的发热并使附加的前向最小化电压增加与带隙不连续相关。在一些实施例中，有源区是垂直移位的多量子阱（MQW）活性区。还提供了一种制造该方法的方法。

10. 发明申请

WO2004088226A2 GAS AGITATED MULTIPHASE CATALYTIC REACTOR WITH REDUCED BACKMIXING 审中-公开
标题翻译：具有降低回弹性能的气体催化多相催化反应器
公开(公告)号：WO2004088226A2
公开(公告)日：2004-10-14
申请号：PCT/US2004/008937
申请日：2004-03-24
申请人： CONOCOPHILLIPS COMPANY , JIANG, Yi , ZHANG, Jianping , ESPINOZA, Rafael, L. , WRIGHT, Harold, A.
发明人： JIANG, Yi , ZHANG, Jianping , ESPINOZA, Rafael, L. , WRIGHT, Harold, A.
IPC分类号： F25J
CPC分类号： C10G2/34 , B01F13/0255 , B01F15/00915 , B01F2215/0422 , B01F2215/0427 , B01F2215/0431 , B01J8/22 , B01J19/006 , B01J19/24 , B01J2208/00132 , B01J2208/00141 , B01J2208/0084 , B01J2219/00081 , B01J2219/00083 , B01J2219/00777
摘要： The present invention provides an apparatus and method for optimizing the degree of backmixing within a gas agitated multiphase reactor at a given gas linear velocity. The embodiments of the present invention involve novel configurations of the multiphase reactor internal structures. In general, the configurations comprise creating a dense area of internal structures in the central region and/or wall regions of the multiphase reactor.
摘要翻译：本发明提供一种用于在给定气体线速度下优化气体搅拌多相反应器内的回混程度的装置和方法。本发明的实施例涉及多相反应器内部结构的新颖结构。通常，构造包括在多相反应器的中心区域和/或壁区域中产生密集的内部结构区域。

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