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1. 发明申请

WO2011115773A3 THIN-BOX METAL BACKGATE EXTREMELY THIN SOI DEVICE 审中-公开
标题翻译：薄金属背板极薄的SOI器件
公开(公告)号：WO2011115773A3
公开(公告)日：2011-12-29
申请号：PCT/US2011027461
申请日：2011-03-08
申请人： IBM , CHAN KEVIN K , REN ZHIBIN , WANG XINHUI
发明人： CHAN KEVIN K , REN ZHIBIN , WANG XINHUI
IPC分类号： H01L29/78 , H01L21/336
CPC分类号： H01L29/7827 , H01L21/7624 , H01L29/66628 , H01L29/66772 , H01L29/78603 , H01L29/78645 , H01L29/78648 , H01L29/78696
摘要： Silicon-on-insulator (SOI) structures with silicon layers less than 20 nm thick are used to form extremely thin silicon-on-insulator (ETSOI) semiconductor devices. ETSOI devices are manufactured using a thin tungsten backgate 101 encapsulated by thin nitride layers 100, 102 to prevent metal oxidation, the tungsten backgate 103 being characterized by its low resistivity. The structure further includes at least one FET having a gate stack 131, 132, 133 formed by a high-K metal gate 132 and a tungsten region 133 superimposed thereon, the footprint of the gate stack utilizing the thin SOI layer 100 as a channel. The SOI structure thus formed controls Vt variations from the thin SOI thickness and dopants therein. The ETSOI high-K metal backgate fully depleted device in conjunction with the thin BOX provides an excellent short channel control and significantly lowers the drain induced bias and sub-threshold swings. The present structure supports the evidence of the stability of the wafer having a tungsten film during thermal processing, and especially during STI and contact formation.
摘要翻译：使用具有小于20nm厚的硅层的绝缘体上硅（SOI）结构来形成极薄的绝缘体上硅（ETSOI）半导体器件。 ETSOI器件使用由薄氮化物层100,102包封的薄钨背板101制造以防止金属氧化，钨背板103的特征在于其低电阻率。该结构还包括至少一个FET，其具有由高K金属栅极132和叠加在其上的钨区域133形成的栅极堆叠131,132,133，栅极堆叠的占用面积利用薄SOI层100作为沟道。如此形成的SOI结构控制了来自薄SOI厚度和其中掺杂剂的Vt变化。 ETSOI高K金属背栅完全耗尽器件与薄型BOX一起提供出色的短通道控制，并显着降低漏极引起的偏置和亚阈值波动。本结构支持在热处理期间具有钨膜的晶片稳定性的证据，并且特别是在STI和接触形成期间。

2. 发明申请

WO2011056336A3 ASYMMETRIC EPITAXY AND APPLICATION THEREOF 审中-公开
标题翻译：不对称外延及其应用
公开(公告)号：WO2011056336A3
公开(公告)日：2011-07-28
申请号：PCT/US2010051383
申请日：2010-10-05
申请人： IBM , YIN HAIZHOU , WANG XINHUI , CHAN KEVIN K , REN ZHIBIN
发明人： YIN HAIZHOU , WANG XINHUI , CHAN KEVIN K , REN ZHIBIN
IPC分类号： H01L21/336 , H01L29/78
CPC分类号： H01L21/26586 , H01L29/66628 , H01L29/66636 , H01L29/66659 , H01L29/7835
摘要： The present invention provides a method of forming asymmetric field-effect-transistors. The method includes forming a gate structure on top of a semiconductor substrate, the gate structure including a gate stack and spacers adjacent to sidewalls of the gate stack, and having a first side and a second side opposite to the first side; performing angled ion-implantation from the first side of the gate structure in the substrate, thereby forming an ion-implanted region adjacent to the first side, wherein the gate structure prevents the angled ion-implantation from reaching the substrate adjacent to the second side of the gate structure; and performing epitaxial growth on the substrate at the first and second sides of the gate structure. As a result, epitaxial growth on the ion-implanted region is much slower than a region experiencing no ion-implantation. A source region formed to the second side of the gate structure by the epitaxial growth has a height higher than a drain region formed to the first side of the gate structure by the epitaxial growth. A semiconductor structure formed thereby is also provided.
摘要翻译：本发明提供了形成非对称场效应晶体管的方法。所述方法包括在半导体衬底的顶部上形成栅极结构，所述栅极结构包括栅极叠层和邻近所述栅极堆叠的侧壁的间隔物，并且具有与所述第一侧相对的第一侧和第二侧; 从衬底中的栅极结构的第一侧进行成角度的离子注入，从而形成与第一侧相邻的离子注入区域，其中栅极结构防止成角度的离子注入到达邻近第二侧的衬底门结构; 以及在栅极结构的第一和第二侧在衬底上进行外延生长。结果，在离子注入区域上的外延生长比经历无离子注入的区域慢得多。通过外延生长形成到栅极结构的第二侧的源极区域的高度高于通过外延生长形成于栅极结构的第一侧的漏极区域的高度。还提供了由此形成的半导体结构。

3. 发明申请

WO2010033866A3 MONOCLONAL ANTIBODIES FOR CSPG4 FOR THE DIAGNOSIS AND TREATMENT OF BASAL BREAST CARCINOMA 审中-公开
标题翻译： CSPG4单克隆抗体诊断和治疗基底样乳腺癌
公开(公告)号：WO2010033866A3
公开(公告)日：2010-05-27
申请号：PCT/US2009057578
申请日：2009-09-18
申请人： UNIV PITTSBURGH , FERRONE SOLDANO , WANG XINHUI
发明人： FERRONE SOLDANO , WANG XINHUI
IPC分类号： G01N33/574 , A61K39/395 , A61P35/00 , C07K16/30
CPC分类号： A61K39/0011 , A61K45/06 , A61K2039/505 , A61K2039/57 , C07K16/18 , C07K16/3015 , C07K16/3053 , C07K2317/73 , C07K2317/76 , G01N33/57415 , G01N33/6854 , G01N2333/4722
摘要： It is disclosed herein that condroitin sulfate proteoglycan 4 (CSPG4), also known as high molecular weight melanomal associated antigen, is overexpressed on basal breast carcinoma cells (BBC), specifically triple negative basal breast carcinoma cells (TNBC). Methods for detecting basal breast cancer in a subject are disclosed. Methods are also disclosed for inhibiting the growth of a basal breast cancer cell. These methods include contacting the basal breast cancer cancer cell with an effective amount of an antibody that specifically binds CSPG4. Additional treatment methods, and the use of antibody panels, are also described herein.
摘要翻译：本文公开了在基础乳腺癌细胞（BBC），特别是三阴性基底乳腺癌细胞（TNBC）上过表达硫酸软骨素蛋白聚糖4（CSPG4），也称为高分子量黑素瘤相关抗原。公开了用于检测受试者中的基底乳腺癌的方法。还公开了抑制基底乳腺癌细胞生长的方法。这些方法包括使基底乳腺癌细胞与有效量的特异性结合CSPG4的抗体接触。本文还描述了另外的治疗方法和抗体小组的使用。

4. 发明申请

WO2007109193A3 INHIBITION OF BREAST CARCINOMA STEM CELL GROWTH AND METASTASIS 审中-公开
标题翻译：乳腺癌干细胞生长和转移的抑制作用
公开(公告)号：WO2007109193A3
公开(公告)日：2007-11-22
申请号：PCT/US2007006736
申请日：2007-03-16
申请人： HEALTH RESEARCH INC , UNIV DUKE , FERRONE SOLDANO , WANG XINHUI , CLAY TIM , LYERLY KIM H , MORSE MICHAEL A , DEVI GAY , OSADA TAKUYA
发明人： FERRONE SOLDANO , WANG XINHUI , CLAY TIM , LYERLY KIM H , MORSE MICHAEL A , DEVI GAY , OSADA TAKUYA
IPC分类号： C12P19/00 , G01N33/574
CPC分类号： G01N33/57415 , A61K51/1051 , A61K51/1066 , A61K2039/505 , C07K16/3015 , C07K16/3053
摘要： Disclosed is a method for inhibiting the growth of breast carcinoma stem cells, that express High Molecular Weight-Melanoma Associated Antigen (HMW-MAA). The method comprises administering to an individual a composition comprising an antibody reactive with HMW-MAA or a fragment of such an antibody in an amount effective to inhibit the growth of the breast carcinoma cells. Also provided are methods for inhibiting metastasis of breast carcinomas and methods for identifying HMW-MAA+ breast cancer stem cells.
摘要翻译：公开了抑制表达高分子量黑素瘤相关抗原（HMW-MAA）的乳腺癌干细胞生长的方法。该方法包括向个体施用组合物，该组合物包含有效抑制乳腺癌细胞生长量的包含与HMW-MAA反应的抗体或该抗体的片段。还提供了用于抑制乳腺癌转移的方法和用于鉴定HMW-MAA +乳腺癌干细胞的方法。

5. 发明申请

WO2010045495A3 FULLY HUMAN ANTIBODIES TO HIGH MOLECULAR WEIGHT-MELANOMA ASSOCIATED ANTIGEN AND USES THEREOF 审中-公开
标题翻译：全分子抗体与高分子量的相关抗原的人类抗体及其用途
公开(公告)号：WO2010045495A3
公开(公告)日：2010-07-29
申请号：PCT/US2009060903
申请日：2009-10-15
申请人： UNIV PITTSBURGH , WANG XINHUI , FERRONE SOLDANO
发明人： WANG XINHUI , FERRONE SOLDANO
IPC分类号： C07K16/18 , G01N33/574
CPC分类号： A61K39/0011 , A61K2039/505 , C07H21/00 , C07K14/705 , C07K16/30 , C07K16/3053 , C07K2317/21 , C07K2317/56 , C07K2317/622 , C07K2317/73 , C07K2317/75 , C07K2317/76 , C12N15/00 , C12N15/62 , G01N33/57423 , G01N33/5743 , G01N2400/40
摘要： Disclosed herein are isolated human monoclonal antibodies, and functional fragments thereof, that specifically bind HMW-MAA. Nucleic acids encoding these antibodies, expression vectors including these nucleic acid molecules, and isolated host cells that express the nucleic acid molecules are also disclosed. The antibodies can be used to detect HMW-MAA in a sample. Methods of diagnosing cancer, or confirming a diagnosis of cancer, are disclosed herein that utilize these antibodies. Methods of treating a subject with cancer are also disclosed.
摘要翻译：本文公开了特异性结合HMW-MAA的分离的人单克隆抗体及其功能片段。还公开了编码这些抗体的核酸，包括这些核酸分子的表达载体和表达核酸分子的分离的宿主细胞。抗体可用于检测样品中的HMW-MAA。本文公开了利用这些抗体的诊断癌症或确认癌症诊断的方法。还公开了治疗患有癌症的受试者的方法。

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