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1. 发明申请

WO2011043556A3 FAULT-LOCATING METHOD FOR A TROLLEY LINE, AND SYSTEM FOR SAME 审中-公开
标题翻译：一种拉杆行的故障定位方法及其系统
公开(公告)号：WO2011043556A3
公开(公告)日：2011-09-09
申请号：PCT/KR2010006693
申请日：2010-09-30
申请人： HOKMAH ENGINEERING CO LTD , LEE DONG HO
发明人： LEE DONG HO
IPC分类号： G01R27/02 , G01R31/02
CPC分类号： G01R31/085
摘要： The present invention relates to a fault-locating method for a trolley line and to a system for same, and to a fault-locating method and to a system for same which can accurately detect the fault point upon the occurrence of a fault in the trolley line and even upon the occurrence of a fault in a relay. The fault-locating method for a trolley line according to the present invention comprises: a step of measuring a forward impedance and a reverse impedance in accordance with the distance between a first point and a second point on the trolley line, and storing the measured impedance as an impedance function of the distance; and a step of calculating a first distance from the first point by the forward impedance function, and a second distance from the second point by the reverse impedance function, using the forward impedance at the first point and the reverse impedance at the second point, which are measured upon the occurrence of a fault, and determining the matched location as a fault point.
摘要翻译：本发明涉及一种电车线路的故障定位方法及其系统，并涉及一种故障定位方法及其系统，该系统能够在故障发生时准确地检测故障点甚至在继电器发生故障时也是如此。根据本发明的用于电车线的故障定位方法包括：根据电车线上的第一点和第二点之间的距离来测量前向阻抗和反向阻抗，并且存储测量的阻抗作为距离的阻抗函数; 以及使用第一点的前向阻抗和第二点的反向阻抗来计算通过正向阻抗函数从第一点起的第一距离和通过反向阻抗函数与第二点的第二距离，其中，在发生故障时进行测量，并将匹配的位置确定为故障点。

2. 发明申请

WO2012134062A3 METHOD FOR MANUFACTURING SOLAR CELL 审中-公开
标题翻译：制造太阳能电池的方法
公开(公告)号：WO2012134062A3
公开(公告)日：2012-12-13
申请号：PCT/KR2012001410
申请日：2012-02-24
申请人： HANWHA CHEMICAL CORP , HYUN DEOC HWAN , CHO JAE EOCK , LEE DONG HO , AHN GUI RYONG , RYU HYUN CHEOL , LEE YONG HWA , KIM GANG II
发明人： HYUN DEOC HWAN , CHO JAE EOCK , LEE DONG HO , AHN GUI RYONG , RYU HYUN CHEOL , LEE YONG HWA , KIM GANG II
IPC分类号： H01L31/042 , H01L31/0236 , H01L31/18
CPC分类号： H01L31/02363 , H01L31/068 , H01L31/1804 , Y02E10/52 , Y02E10/547 , Y02P70/521
摘要： Provided is a method of manufacturing a solar cell, wherein a solar cell is manufactured by combining a damage removal etching process, a texturing process and an edge isolation process. The method is advantageous in that RIE and DRE are conducted, and then DRE/PSG and/or an edge isolation removal process are simultaneously conducted, so that the movement of a substrate (that is, a wafer) is minimized, thereby reducing the damage rate of the substrate.
摘要翻译：提供一种制造太阳能电池的方法，其中通过组合损坏去除蚀刻工艺，纹理化工艺和边缘隔离工艺来制造太阳能电池。该方法的优点在于进行RIE和DRE，然后同时进行DRE / PSG和/或边缘隔离去除工艺，使得衬底（即，晶片）的移动最小化，从而减少损伤底物的比例。

3. 发明申请

WO2012134061A3 SOLAR CELL AND METHOD FOR MANUFACTURING THE SAME 审中-公开
标题翻译：太阳能电池及其制造方法
公开(公告)号：WO2012134061A3
公开(公告)日：2012-11-29
申请号：PCT/KR2012001371
申请日：2012-02-23
申请人： HANWHA CHEMICAL CORP , HYUN DEOC HWAN , CHO JAE EOCK , LEE DONG HO , RYU HYUN CHEOL , LEE YONG HWA , KIM GANG IL , AHN GUI RYONG
发明人： HYUN DEOC HWAN , CHO JAE EOCK , LEE DONG HO , RYU HYUN CHEOL , LEE YONG HWA , KIM GANG IL , AHN GUI RYONG
IPC分类号： H01L31/042 , H01L31/0236 , H01L31/18
CPC分类号： H01L31/02363 , H01L31/068 , H01L31/1804 , Y02E10/547 , Y02P70/521
摘要： Provided are a solar cell and a method for manufacturing the same, and more particularly, a solar cell for forming a selective emitter structure and a surface texture using dry plasma etching at the same time, and a method for manufacturing the same. The solar cell includes a silicon semiconductor substrate; an emitter doping layer having a surface, which is textured by a texturing process on an upper portion of the silicon semiconductor substrate and selectively doped; an anti-reflective film layer formed on a front of the substrate; a front electrode accessing to the emitter doping layer by penetrating the anti-reflective film layer; and a rear electrode accessing to a rear of the silicon semiconductor substrate.
摘要翻译：本发明提供一种太阳能电池及其制造方法，更具体地，涉及一种使用干等离子体蚀刻同时形成选择性发射极结构和表面纹理的太阳能电池及其制造方法。太阳能电池包括硅半导体基板; 具有表面的发射极掺杂层，其通过在硅半导体衬底的上部上的纹理化处理而被选择性地掺杂; 形成在基板前面的抗反射膜层; 前电极通过穿透抗反射膜层而接近发射极掺杂层; 以及接近硅半导体衬底后部的后电极。

4. 发明申请

WO2011046380A3 METHOD FOR PREPARATION OF CARBAMIC ACID (R)-1-ARYL-2-TETRAZOLYL-ETHYL ESTER 审中-公开
标题翻译：制备氨基酸（R）-1-芳基-2-四唑基 - 乙基酯的方法
公开(公告)号：WO2011046380A3
公开(公告)日：2011-10-20
申请号：PCT/KR2010007069
申请日：2010-10-15
申请人： SK BIOPHARMACEUTICALS CO LTD , LIM SANG CHUL , UHM MOO YONG , LEE DAE WON , KIM HUI HO , LEE DONG HO , LEE HYUN SEOK
发明人： LIM SANG CHUL , UHM MOO YONG , LEE DAE WON , KIM HUI HO , LEE DONG HO , LEE HYUN SEOK
IPC分类号： C07D257/04
CPC分类号： C12P17/10 , C07D257/04
摘要： Disclosed is a method for the preparation of carbamic acid (R)-1-aryl-2-tetrazolyl-ethyl ester, comprising the enantioselective enzyme reduction of the corresponding arylketone and the carbamation of the resultant alcohol.
摘要翻译：公开了一种制备氨基甲酸（R）-1-芳基-2-四唑基乙酯的方法，该方法包括相应的芳基酮的对映选择性酶还原和所得醇的氨基甲酸酯化。

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