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1. 发明申请

WO1997012714A3 DEVICE FOR THE SELECTIVE, CONTACTLESS SOLDERING AND UNSOLDERING OF COMPONENTS 审中-公开
公开(公告)号：WO1997012714A3
公开(公告)日：1997-04-10
申请号：PCT/DE1996001820
申请日：1996-09-18
申请人： HAHN-MEITNER-INSTITUT BERLIN GMBH
发明人： HAHN-MEITNER-INSTITUT BERLIN GMBH , GERLOFF, Ulrich
IPC分类号： B23K01/018

2. 发明申请

WO1998018171A1 INERT CATHODE FOR SELECTIVE REDUCTION OF OXYGEN AND A METHOD FOR THE PRODUCTION THEREOF 审中-公开
标题翻译：惰性阴极氧选择性还原和方法及其
公开(公告)号：WO1998018171A1
公开(公告)日：1998-04-30
申请号：PCT/DE1997002453
申请日：1997-10-16
申请人： HAHN-MEITNER-INSTITUT BERLIN GMBH , ALONSO-VANTE, Nicolas
发明人： HAHN-MEITNER-INSTITUT BERLIN GMBH
IPC分类号： H01M04/90
CPC分类号： C25B11/035 , H01M4/86 , H01M4/90 , H01M4/9016 , H01M8/1009 , H01M2004/8689 , Y02P70/56
摘要： Inert cathodes, provided with a catalytically effective thin surface coating, enabling oxygen reduction are suitable for fuel cells. However, in the presence of methanol as a combustible, this coating must exhibit selective properties which cannot be obtained by using semiconductive cluster materials made of transition metal chalkogenides in the form of powder or a fine coating. The inventive inert cathodes possess the desired catalytic and selective properties. Their thin surface coating comprises colloidally dispersed homogenously distributed clusters and its production requires only a minimal amount of material in the nanogram range for a low coverage rate with a highly selective and catalytic degree of action. The coating is obtained by immersion in a colloid containing the cluster mixture and a stabilizer in a solvent.The solvent and stabilizer are removed by temperature treatment after application of the colloid.
摘要翻译：用于燃料电池是用于还原氧惰性阴极，其被设置有薄的催化活性表面涂层是合适的。在甲醇的存在下作为燃料，这涂层必须与来自Übergangsmetallchalkogeniden半导体材料聚集，但是不足以也选择性能，以实现仅在粉末或薄膜形式。所需的催化和选择性性质提供了本发明的惰性阴极，薄表面涂层胶体和均匀地分布在上述的簇型，并且其生产需要在纳克范围的最小使用的材料具有高的和选择性的催化效果密度极低程度的覆盖。该涂层通过浸渍在含有一起在群集混合物溶剂中与稳定剂的胶体形成。胶体的应用程序之后，可通过温度处理来除去溶剂和稳定剂。

3. 发明申请

WO1995028008A1 SOLID-STATE SOLAR CELL 审中-公开
标题翻译：固态太阳能电池
公开(公告)号：WO1995028008A1
公开(公告)日：1995-10-19
申请号：PCT/DE1995000485
申请日：1995-04-07
申请人： HAHN-MEITNER-INSTITUT BERLIN GMBH , BRAUER, Manfred , SCHMIDT, Manfred , ELLMER, Klaus , FENSKE, Frank , FLIETNER, Hans
发明人： HAHN-MEITNER-INSTITUT BERLIN GMBH
IPC分类号： H01L31/06
CPC分类号： H01L31/06 , H01L31/062 , Y02E10/50
摘要： The solid-state solar cell proposed is designed as a photo-injection cell and made up of a series of layers comprising a substrate on which is located a 100 to 1000 nm thick low-impedance collector layer with an electron affinity of 2 to 4 eV, followed by a 50 to 1000 nm thick quasi-insulating charge-transfer layer with anenergy gap of 2 to 4 eV and finally a high-absorbing photo-emitter layer 5 to 100 nm, preferably 5 to 50 nm, thick with an electron affinity of 3 to 5 eV. The photo-injection cell permits separate optimization of the individual layers as regards their functions of optical excitation and charge-carrier transport in the conversion of optical energy into electrical energy.
摘要翻译：根据形成为光注入单元，并且其中的100纳米厚的基板上至1000纳米，具有低阻抗的集电极层2电子伏特至4伏特，该厚度以上的功函数，一个50纳米至1000纳米和的能隙的层序列组成的本发明的固态的太阳能电池的具有至多4 eV的半绝缘的电荷转移层和在其上的高吸收性2 eV的，厚度为5nm至100nm，优选5nm至50nm，并且是3eV至5 eV的具有光发射极层的功函数被布置。光电池注入允许各个层的分离的优化相对于它们的功能的光学激发和在光的能量转换的载流子的传输转换成电能。

4. 发明申请

WO1998000363A1 PROCESS AND DEVICE FOR PRODUCING STABLE ENDOHEDRAL FULLERENES OF STRUCTURE Z@Cx, IN WHICH x = 60 审中-公开
标题翻译：为了生产稳定富勒烯的方法和装置的富勒烯以Z @ C中的结构X X> / = 60
公开(公告)号：WO1998000363A1
公开(公告)日：1998-01-08
申请号：PCT/DE1997001399
申请日：1997-06-27
申请人： HAHN-MEITNER-INSTITUT BERLIN GMBH , WEIDINGER, Alois , ALMEIDA MURPHY, Theo , MERTESACKER, Bernd , HÖHNE, Manfred , PAWLIK, Thomas , SPAETH, Johann-Martin , PIETZAK, Björn
发明人： HAHN-MEITNER-INSTITUT BERLIN GMBH
IPC分类号： C01B31/02
CPC分类号： B82Y40/00 , B82Y10/00 , B82Y30/00 , C01B32/15 , C01B32/152 , H01L51/001 , H01L51/0046
摘要： A process is disclosed for producing stable endohedral fullerenes of structure Z@Cx, in which x >/= 60. A Z-atom is implanted in the fullerenes and both fullerenes and low energy accelerated Z-particles are produced at the same time and interact with each other in a vacuum vessel. The fullerenes are then withdrawn from the vacuum vessel, dissolved in a solvent and dried. Atoms of non-metals and metalloids are used as Z-atoms. The fullerenes are produced by vapour phase deposition of Cx on a substrate and and the accelerated Z-particles are produced by an ion source and directed onto the growing fullerene layer on the substrate. Alternatively, the fullerenes are produced by evaporating Cx in a furnace through which flows a gas mixture which contains the material to be implanted and the accelerated Z-particles are produced by a high-voltage gas discharge in the same furnace. The disclosed device for producing endohedral fullerenes by means of a high-voltage gas discharge has a cathode which is provided with cooling means and/or has an enlarged surface.
摘要翻译：为了制备结构Ž@ C_ x，其中x> / = 60的稳定富勒烯富勒烯提供了一种方法，其中根据本发明，为Z原子在富勒烯，其中，同时在一真空容器内注入二者富勒烯和低能量加速ž颗粒并且将彼此相互作用，那么这些富勒烯从真空容器中取出，溶解在溶剂中并干燥。当非和半金属的原子Ž原子被植入。富勒烯的设置发生被C x的蒸发在基片和从离子源，其中，所述加速粒子被引导到加速Ž颗粒的规定基板富勒烯层上的生长，或者其中通过使用C x的蒸发提供富勒烯的流通与材料待注入含氧气体混合物炉并通过在同一炉的高压气体放提供加速ž颗粒。在通过高压气体放电阴极具有用于它的冷却和/或增加的区域的装置来生产的富勒烯富勒烯本发明的装置。

5. 发明申请

WO1998000362A1 ELECTRODE FOR PRODUCING HIGHER FULLERENES BY THE KRATSCHMER-HUFFMAN ARC PROCESS 审中-公开
标题翻译：电极用于生产高碳富勒烯后Krätschmer霍夫曼电弧法
公开(公告)号：WO1998000362A1
公开(公告)日：1998-01-08
申请号：PCT/DE1997001398
申请日：1997-06-27
申请人： HAHN-MEITNER-INSTITUT BERLIN GMBH , PIETZAK, Björn , MERTESACKER, Bernd , WEIDINGER, Alois
发明人： HAHN-MEITNER-INSTITUT BERLIN GMBH
IPC分类号： C01B31/02
CPC分类号： B82Y30/00 , B82Y40/00 , C01B32/15 , C01B32/152
摘要： In order to improve the yield of higher fullerenes produced by the Krätschmer-Huffman arc process, the graphite electrode contains an oxygen-gettering material whose boiling point differs only slightly from the graphite evaporation point.
摘要翻译：为了提高后Krätschmer霍夫曼电弧法更高的富勒烯的操作中，石墨电极含有sauerstoffgetterndes材料，其沸点从石墨的蒸发点仅稍微偏离。

6. 发明申请

WO1996036990A1 SILICON-BASED SEMICONDUCTOR COMPONENT WITH A POROUS LAYER AND PROCESS FOR PRODUCING POROUS SILICON LAYERS 审中-公开
标题翻译：半导体部件基于硅以及制备多孔硅层的多孔层和方法
公开(公告)号：WO1996036990A1
公开(公告)日：1996-11-21
申请号：PCT/DE1996000914
申请日：1996-05-15
申请人： HAHN-MEITNER-INSTITUT BERLIN GMBH , DITTRICH, Thomas , FLIETNER, Hans , LEWERENZ, Hans-Joachim , RAPPICH, Jörg , RAUSCHER, Stefan , SIEBER, Ina
发明人： HAHN-MEITNER-INSTITUT BERLIN GMBH
IPC分类号： H01L21/306
CPC分类号： H01L33/346 , C25F3/12 , H01L29/16 , H01L31/028 , H01L31/1804 , Y02E10/547 , Y02P70/521
摘要： Silicon-based semiconductor components - solar cells, protodectectors, LEDs - can be made with a porous layer on the adjacent substrate surface. Porous silicon can be produced by the electrochemical surface modification of flat silicon bodies. The physical properties of ultra-thin layers with nanoporous structures and their electrical or optical and opto-electric properties of high quality can be obtained. The production processes are compatible with preparation measures for other purposes. Such porous layers UPSL are ultra-thin - 20 to 100 or 150 nm - with pore diameters of up to 10 nm. Homogeneity is attained in both features. In addition, the type of conductivity and the doping concentration of the substrate material are independent. Said material may, for example, be pure Si, SiC or SiGe; it is single or polycrystalline and p conductive (solar cell, photodetector) or n conductive (LED). Layer thicknesses can be predetermined if a 0.1 to 0.7 molar aqueous electrolyte with a pH of 3.5 +/- 0.5 is used and the maximum anodisation current is kept between 0.3 and 2.1 mA/cm depending on its concentration. The treatment time can be adjusted via a reference value of flowed electric charge per unit area.
摘要翻译：基于硅的半导体器件 - 太阳能电池，光电探测器，发光二极管 - 可与相邻基片表面上的多孔层而形成。多孔硅可以通过电化学表面改性浅硅体来生产。超薄层的物理性能，具有纳米多孔结构，以及它们的电或光学和电光学特性，可以提供具有高品质。制造过程与制备措施到其它类型的用途相容。这种多孔层是超薄UPSL - 20纳米至100纳米或150纳米 - 和具有直径达10nm的孔径。在这两方面，存在同质化。此外，存在的导电类型和基片材料的掺杂剂浓度的独立性。这例如由纯Si，SiC或SiGe构成，是单晶或多晶及p型（太阳能电池中，光电检测器）或n型（发光二极管）。层厚度可以由具有3.5的pH +/- 0.5和在其浓度，为0.3毫安/厘米<2>的最大阳极化电流的功能的0.1采用〜0.7摩尔水电解质来指定和2.1毫安/平方厘米保持<2>。治疗持续时间可以被设置为通过设定点流出的每单位面积电荷。

7. 发明申请

WO1995025186A1 SURFACE TREATMENT PROCESS FOR FLAT SILICON BODIES 审中-公开
标题翻译：方法用于处理表面FLAT硅体
公开(公告)号：WO1995025186A1
公开(公告)日：1995-09-21
申请号：PCT/DE1995000391
申请日：1995-03-17
申请人： HAHN-MEITNER-INSTITUT BERLIN GMBH , RAPPICH, Jörg , JUNGBLUT, Helmut , AGGOUR, Mohammed , LEWERENZ, Hans-Joachim
发明人： HAHN-MEITNER-INSTITUT BERLIN GMBH
IPC分类号： C25F03/30
CPC分类号： H01L21/3063 , C25F3/30
摘要： Semiconductor wafers for the production of electronic components must have a surface as perfect as possible for subsequent processes. For that purpose a flat n-Si body is electrolytically polished in a fluoride-containing electrolyte solution to which is applied an anodic potential while the surface to be treated is irradiated with light whose energy is at least equal to that of the band gap, or a flat p-Si body is similarly treated in a dark environment. At the same time, an electroanalytic monitoring process is carried out to detect the occurrence of a periodic current oscillation. The surface is polished during a few such current oscillations. The treatment comprises in particular the anodic oxidation and electrochemical etching of the surface, if required also an electric polishing process, and allows a high electronic quality characterised by the interface state density to be obtained by immediate hydrogen termination during the transient dark current that sets in.
摘要翻译：要使用的半导体晶片的制造电子元件必须具有完美的表面尽可能进行后续处理的基础。在含氟化物的电解质溶液由表面照射由n-Si构成平坦的Si-机构的电解平滑与光被处理，其中是至少等于带隙能量，或进行来自的p-Si在黑暗的地方，在所施加的阳极电位和electroanalytically监测周期性电流振荡的发展。在此期间发生更少的这样的电流振荡的表面平滑。治疗特别包括阳极化，表面的电化学蚀刻，以及任选地也电解，并且其被建立瞬态暗电流随后氢终止太高，其特征在于，界面态密度电子质量的持续时间期间执行对立即，。

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