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1. 发明申请

WO2007120573A3 PLASMA DIELECTRIC ETCH PROCESS INCLUDING EX-SITU BACKSIDE POLUMER REMOVAL FOR LOW-DIELECTRIC CONSTANT MATERIAL 审中-公开
标题翻译：等离子体电介质蚀刻工艺，包括用于低介电常数材料的EX-SITU后置式除垢器
公开(公告)号：WO2007120573A3
公开(公告)日：2008-08-21
申请号：PCT/US2007008578
申请日：2007-04-07
申请人： APPLIED MATERIALS INC
发明人： DELGADINO GERARDO A , LAHIRI INDRAJIT , SU TEH-TIEN , SHEIH BRIAN SY-YUAN , SINHA ASHOK K
IPC分类号： H01L21/311
CPC分类号： H01L21/31138 , G03F7/427 , H01J37/32357 , H01L21/0209
摘要： A plasma etch process for etching a porous carbon- doped silicon oxide dielectric layer using a photoresist mask is carried out first in an etch reactor by performing a f luoro-carbon based etch process on the workpiece to etch exposed portions of the dielectric layer while depositing protective f luoro-carbbn polymer on the photoresist mask. Then, in an ashing reactor, polymer and photoresist are removed by heating the workpiece to over 100 degrees C, exposing a peripheral portion of the backside of said workpiece, and providing products from a plasma of a hydrogen process gas to reduce carbon contained in polymer and photoresist on said workpiece until the polymer has been removed from a backside of said workpiece. The process gas preferably contains both hydrogen gas and water vapor, although the primary constituent is hydrogen gas. The wafer (workpiece) backside may be exposed by extending the wafer lift pins.
摘要翻译：首先在蚀刻反应器中通过在工件上执行基于氟的蚀刻工艺来蚀刻使用光致抗蚀剂掩模的多孔碳掺杂氧化硅介电层的等离子体蚀刻工艺，以蚀刻介电层的暴露部分，同时沉积保护性光致抗蚀剂掩模上的氟碳聚合物。然后，在灰化反应器中，通过将工件加热到超过100℃，除去聚合物和光致抗蚀剂，暴露所述工件的背面的周边部分，并提供来自氢处理气体的等离子体的产物以还原聚合物中包含的碳和所述工件上的光致抗蚀剂，直到聚合物已从所述工件的背面移除。处理气体优选含有氢气和水蒸汽，尽管主要成分是氢气。晶片（工件）背面可以通过延伸晶片提升销来暴露。

2. 发明申请

WO0219418A3 METHOD FOR ACHIEVING COPPER FILL OF HIGH ASPECT RATIO INTERCONNECT FEATURES 审中-公开
标题翻译：实现高比例互连特征铜箔的方法
公开(公告)号：WO0219418A3
公开(公告)日：2003-05-08
申请号：PCT/US0126597
申请日：2001-08-27
申请人： APPLIED MATERIALS INC
发明人： CARL DANIEL A , CHIN BARRY , CHEN LIANG , CHEUNG ROBIN , DING PEIJUN , DORDI YEZDI N , HASHIM IMRAN , HEY PETER W , SINHA ASHOK K
IPC分类号： H01L21/288 , H01L21/768
CPC分类号： H01L21/2885 , H01L21/76877
摘要： One aspect of the invention provides a consistent metal electroplating technique to form void-less metal interconnects in sub-micron high aspect ratio features on semiconductor substrates. One embodiment of the invention provides a method for filling sub-micron features (214) on a substrate, comprising reactive precleaning the substrate, depositing a barrier layer (218) on the substrate using high density plasma physical vapor deposition; depositing a seed layer (220) over the barrier layer using high density plasma physical vapor deposition; and electro-chemically depositing a metal (222) using a highly resistive electrolyte and applying a first current density during a first deposition period followed by a second current density during a second period.
摘要翻译：本发明的一个方面提供一致的金属电镀技术，以在半导体衬底上形成亚微米高纵横比特征的无空隙金属互连。本发明的一个实施例提供了一种用于在基底上填充亚微米特征（214）的方法，其包括反应性预清洗所述基底，使用高密度等离子体物理气相沉积在所述基底上沉积阻挡层（218）使用高密度等离子体物理气相沉积在阻挡层上沉积种子层（220）; 以及使用高电阻电解质电化学沉积金属（222），并且在第一周期期间在第一沉积周期期间施加第一电流密度，然后施加第二电流密度。

3. 发明申请

WO03029515A2 FORMATION OF COMPOSITE TUNGSTEN FILMS 审中-公开
标题翻译：形成复合陶瓷薄膜
公开(公告)号：WO03029515A2
公开(公告)日：2003-04-10
申请号：PCT/US0222585
申请日：2002-07-16
申请人： APPLIED MATERIALS INC , LAI KEN K , BYUN JEONG SOO , WU FREDERICK C , SRINIVAS RAMANUJAPURAM A , GELATOS AVGERINOS , CHANG MEI , KORI MORIS , SINHA ASHOK K , CHUNG HUA , FANG HONGBIN , MAK ALFRED W , YANG MICHAEL X , XI MING
发明人： LAI KEN K , BYUN JEONG SOO , WU FREDERICK C , SRINIVAS RAMANUJAPURAM A , GELATOS AVGERINOS , CHANG MEI , KORI MORIS , SINHA ASHOK K , CHUNG HUA , FANG HONGBIN , MAK ALFRED W , YANG MICHAEL X , XI MING
IPC分类号： C23C16/14 , C23C16/02 , C23C16/04 , C23C16/08 , C23C16/44 , C23C16/455 , H01L21/28 , H01L21/285 , H01L21/768 , C23C16/16
CPC分类号： C23C16/45525 , C23C16/0281 , C23C16/08 , C23C16/14 , C23C16/45523 , H01L21/28556 , H01L21/28562 , H01L21/76843 , H01L21/76876 , H01L21/76877
摘要： Methods for the deposition of tungsten films are provided. The methods include depositing a nucleation layer by alternatively adsorbing a tungsten precursor and a reducing gas on a substrate, and depositing a bulk layer of tungsten over the nucleation layer.
摘要翻译：提供了沉积钨膜的方法。所述方法包括通过交替地将钨前体和还原气体吸附在基底上沉积成核层，以及在成核层上沉积钨层。

4. 发明申请

WO0032835A8 ELECTRO-CHEMICAL DEPOSITION SYSTEM 审中-公开
标题翻译：电化学沉积系统
公开(公告)号：WO0032835A8
公开(公告)日：2000-08-17
申请号：PCT/US9928159
申请日：1999-11-29
申请人： APPLIED MATERIALS INC
发明人： DORDI YEZDI , OLGADO DONALD J , MORAD RATSON , HEY PETER , DENOME MARK , SUGARMAN MICHAEL , LLOYD MARK DI , STEVENS JOE , MAROHL DAN , SHIN HO SEON , RAVINOVICH EUGENE , CHEUNG ROBIN , SINHA ASHOK K , TEPMAN AVI , CARL DAN , BIRKMAIER GEORGE , SHEN BEN
IPC分类号： C25D7/12 , C25D17/00 , H01L21/288 , H05K3/24 , C23C
CPC分类号： C25D17/001 , C25D7/123 , H01L21/2885 , H05K3/241
摘要： The present invention provides an electro-chemical deposition system that is designed with a flexible architecture that is expandable to accommodate future designs and gap fill requirements and provides satisfactory throughput to meet the demands of other processing systems. The electro-chemical deposition system generally comprises a mainframe having a mainframe wafer transfer robot, a loading station disposed in connection with the mainframe, one or more processing cells disposed in connection with the mainframe, and an electrolyte supply fluidly connected to the one or more electrical processing cells. Preferably, the electro-chemical deposition system includes an edge bead removal/spin-rinse-dry (EBR/SRD) station disposed on the mainframe adjacent the loading station, a rapid thermal anneal chamber attached to the loading station, a seed layer repair station disposed on the mainframe, and a system controller for controlling the electro-chemical deposition process and the components of the electro-chemical deposition system.
摘要翻译：本发明提供了一种电化学沉积系统，其设计成具有可扩展的灵活架构以适应未来的设计和间隙填充要求，并提供令人满意的吞吐量以满足其他处理系统的需求。电化学沉积系统通常包括具有主框架晶圆传送机器人的主框架，与主框架连接设置的装载站，与主框架连接设置的一个或多个处理单元以及流体连接到主框架的一个或多个电气处理单元。优选地，电化学沉积系统包括设置在邻近装载站的主框架上的边缘珠去除/旋转冲洗干燥（EBR / SRD）站，连接到装载站的快速热退火室，种子层修复站设置在主机上;以及系统控制器，用于控制电化学沉积过程和电化学沉积系统的部件。

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