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1. 发明申请

WO2014116304A2 METHOD AND HARDWARE FOR CLEANING UV CHAMBERS 审中-公开
标题翻译：用于清洁UV室的方法和硬件
公开(公告)号：WO2014116304A2
公开(公告)日：2014-07-31
申请号：PCT/US2013055594
申请日：2013-08-19
申请人： APPLIED MATERIALS INC
发明人： BALUJA SANJEEV , DEMOS ALEXANDROS T , CHAN KELVIN , ROCHA-ALVAREZ JUAN CARLOS , HENDRICKSON SCOTT A , KANGUDE ABHIJIT , TUREVSKY INNA , CHHABRA MAHENDRA , NOWAK THOMAS , YAO DAPING , XIE BO , RAJ DAEMIAN
IPC分类号： H01L21/302 , H01L21/02
CPC分类号： C23C16/4405 , B08B7/0021 , B08B7/0057 , C11D11/0041 , C23C16/45565 , C23C16/482
摘要： A cleaning method for a UV chamber involves providing a first cleaning gas, a second cleaning gas, and a purge gas to one or more openings in the chamber. The first cleaning gas may be an oxygen containing gas, such as ozone, to remove carbon residues. The second cleaning gas may be a remote plasma of NF3 and O2 to remove silicon residues. The UV chamber may have two UV transparent showerheads, which together with a UV window in the chamber lid, define a gas volume proximate the UV window and a distribution volume below the gas volume. A purge gas may be flowed through the gas volume while one or more of the cleaning gases is flowed into the distribution volume to prevent the cleaning gases from impinging on the UV transparent window.
摘要翻译：用于UV腔室的清洁方法涉及向腔室中的一个或多个开口提供第一清洁气体，第二清洁气体和清洁气体。第一清洁气体可以是含氧气体，例如臭氧，以去除碳残留物。第二清洁气体可以是NF3和O2的远程等离子体以去除硅残留物。 UV室可具有两个UV透明喷头，其与室盖中的UV窗口一起限定靠近UV窗口的气体体积和低于气体体积的分配体积。清洁气体可以流过气体体积，同时一种或多种清洁气体流入分配体积中以防止清洁气体撞击在UV透明窗上。

2. 发明申请

WO2011106075A3 A MICROELECTRONIC STRUCTURE INCLUDING A LOW K DIELECTRIC AND A METHOD OF CONTROLLING CARBON DISTRIBUTION IN THE STRUCTURE 审中-公开
标题翻译：一种包括低K电介质的微电子结构和一种控制结构中碳分布的方法
公开(公告)号：WO2011106075A3
公开(公告)日：2011-11-24
申请号：PCT/US2011000215
申请日：2011-02-03
申请人： APPLIED MATERIALS INC
发明人： XIE BO , DEMOS ALEXANDROS T , RAJ DAEMIAN , NGO SURE , YIM KANG SUB
IPC分类号： H01L21/3205 , H01L21/205 , H01L21/28
CPC分类号： H01L21/02274 , C23C16/30 , C23C16/45523 , H01L21/02126 , H01L21/02203 , H01L21/02211 , H01L21/02216 , H01L21/7682 , H01L21/76832 , H01L21/76835
摘要： Embodiments of the present invention pertain to the formation of microelectronic structures. Low k dielectric materials need to exhibit a dielectric constant of less than about 2.6 for the next technology node of 32 nm. The present invention enables the formation of semiconductor devices which make use of such low k dielectric materials while providing an improved flexural and shear strength integrity of the microelectronic structure as a whole.
摘要翻译：本发明的实施例涉及微电子结构的形成。对于32nm的下一个技术节点，低k电介质材料需要表现出小于约2.6的介电常数。本发明能够形成使用这种低k电介质材料的半导体器件，同时整体提供微电子结构的改进的挠曲和剪切强度完整性。

3. 发明申请

WO2014158320A1 WET CLEANING OF CHAMBER COMPONENT 审中-公开
标题翻译：室内组件的清洁
公开(公告)号：WO2014158320A1
公开(公告)日：2014-10-02
申请号：PCT/US2014012296
申请日：2014-01-21
申请人： APPLIED MATERIALS INC
发明人： DUAN REN-GUAN , ROCHA-ALVAREZ JUAN CARLOS , BALUJA SANJEEV , RAJ DAEMIAN , TUREVSKY INNA
IPC分类号： C11D7/28 , C11D7/32 , H01L21/306
CPC分类号： C11D11/007 , B08B3/08 , B08B3/10 , B08B3/12 , C11D7/08 , C11D7/10 , C11D11/0041 , H01L21/67028
摘要： Embodiments of the invention generally provide methods for cleaning a UV processing chamber component. In one embodiment, a method for cleaning a UV processing chamber component includes soaking the chamber component having a SiCO residue formed thereon in a cleaning solution for about 1 to 10 minutes. The cleaning solution comprises about 5% by weight to about 60% weight of NH4F and about 0.5% by weight to about 10% by weight of HF. The method also includes polishing the chamber component. In another embodiment, a method of cleaning a processing chamber component fabricated from quartz includes soaking the chamber component having a SiCO residue formed thereon in a cleaning solution comprising about 36% by weight of NH4F and about 5% by weight of HF for about 3 minutes. The method also includes applying an ultrasonic power to the cleaning solution, and mechanically polishing the chamber component.
摘要翻译：本发明的实施方案通常提供用于清洁UV处理室部件的方法。在一个实施例中，用于清洁UV处理室部件的方法包括将其上形成有SiCO残留物的室部件浸泡在清洁溶液中约1至10分钟。清洁溶液包含约5重量％至约60重量％的NH 4 F和约0.5重量％至约10重量％的HF。该方法还包括抛光室部件。在另一个实施例中，清洁由石英制成的处理室部件的方法包括将其上形成有SiCO残余物的室部件浸泡在包含约36重量％NH 4 F和约5重量％HF的清洗溶液中约3分钟。该方法还包括向清洗溶液施加超声波功率，并机械抛光室部件。

4. 发明申请

WO2006026370A2 METHOD TO REDUCE PLASMA DAMAGE DURING CLEANING OF SEMICONDUCTOR WAFER PROCESSING CHAMBER 审中-公开
标题翻译：降低半导体晶圆加工室清洗过程中等离子体损伤的方法
公开(公告)号：WO2006026370A2
公开(公告)日：2006-03-09
申请号：PCT/US2005030283
申请日：2005-08-24
申请人： APPLIED MATERIALS INC , NOWAK THOMAS , XIA LI-QUN , ROCHA-ALVAREZ JUAN CARLOS , HOPPER BRIAN , TRACHUK YURI , BALASUBRAMANIAN GANESH , RAJ DAEMIAN
发明人： NOWAK THOMAS , XIA LI-QUN , ROCHA-ALVAREZ JUAN CARLOS , HOPPER BRIAN , TRACHUK YURI , BALASUBRAMANIAN GANESH , RAJ DAEMIAN
IPC分类号： C23C16/44 , B08B7/00 , H01L21/00
CPC分类号： H01J37/32357 , B08B7/0035 , C23C16/4405 , H01J2237/335
摘要： A method and apparatus for cleaning a semiconductor manufacturing chamber comprising introducing a heteroatomic fluorine containing gas to a remote plasma source, disassociating the heteroatomic fluorine containing gas, forming diatomic fluorine, transporting gas from the remote plasma source into a processing region of the chamber, and ionizing the diatomic fluorine with an in situ plasma.
摘要翻译：一种用于清洁半导体制造腔室的方法和设备，包括将含杂原子的含氟气体引入远程等离子体源，使含杂原子的含氟气体分离，形成双原子氟，将气体从远程等离子体源传输到腔室的处理区域，用原位等离子体电离双原子氟。

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