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1. 发明申请

WO2014137550A2 THERMAL COUPLED QUARTZ DOME HEAT SINK 审中-公开
标题翻译：热耦合QUARTZ DOME HEAT SINK
公开(公告)号：WO2014137550A2
公开(公告)日：2014-09-12
申请号：PCT/US2014/015731
申请日：2014-02-11
申请人： APPLIED MATERIALS, INC.
发明人： RANISH, Joseph, M. , SAMIR, Mehmet, Tugrul , BRILLHART, Paul
CPC分类号： H01L21/67115 , C23C16/4411 , C23C16/463
摘要： Embodiments described herein generally relate to apparatus for processing substrates. The apparatus generally include a process chamber having a substrate support therein. A plurality of lamps are positioned to provide radiant energy through an optically transparent window to a substrate positioned on the substrate support. The plurality of lamps are positioned in a lamp housing. A cooling channel is formed in the lamp housing. A surface of the lamp housing is spaced a distance from the optically transparent window to form a gap therebetween. The gap functions as a fluid channel and is adapted to contain a fluid therein to facilitate cooling of the optically transparent window. Turbulence inducing features, such as openings, formed in the surface of the lamp housing induce a turbulent flow of the cooling fluid, thus improving heat transfer between the optically transparent window and the lamp housing.
摘要翻译：本文描述的实施例一般涉及用于处理衬底的设备。该设备通常包括其中具有衬底支撑件的处理室。定位多个灯以通过光学透明的窗口将辐射能提供给位于基板支撑件上的基板。多个灯被定位在灯壳体中。在灯壳中形成冷却通道。灯壳的表面与光学透明窗口间隔一段距离，以在它们之间形成间隙。间隙用作流体通道并且适于在其中容纳流体以便于光学透明窗的冷却。在灯壳表面形成的诸如开口的湍流诱发特征引起冷却流体的湍流，从而改善了光学透明窗和灯壳之间的热传递。

2. 发明申请

WO2010006156A2 RAPID THERMAL PROCESSING CHAMBER WITH SHOWER HEAD 审中-公开
标题翻译：具有淋浴头的快速热处理室
公开(公告)号：WO2010006156A2
公开(公告)日：2010-01-14
申请号：PCT/US2009/050085
申请日：2009-07-09
申请人： APPLIED MATERIALS, INC. , SORABJI, Khurshed , RANISH, Joseph, M. , ADERHOLD, Wolfgang , HUNTER, Aaron, M. , LERNER, Alexander, N.
发明人： SORABJI, Khurshed , RANISH, Joseph, M. , ADERHOLD, Wolfgang , HUNTER, Aaron, M. , LERNER, Alexander, N.
IPC分类号： H01L21/324
CPC分类号： H01L21/67109 , C23C16/4404 , C23C16/45512 , C23C16/45565 , C23C16/4557 , C23C16/45572 , C23C16/4584 , C23C16/481 , F27B17/0025 , H01L21/67098 , H01L21/67115 , H01L21/67167 , H01L21/67207
摘要： Apparatus and methods for thermally processing a substrate are provided. A chamber containing a levitating support assembly configured to position the substrate at different distances from a plate during the heating and cooling of a substrate. In one embodiment a plurality of openings on the surface of the plate are configured to evenly distribute gas across a radial surface of the substrate. The distribution of gas may couple radiant energy not reflected back to the substrate during thermal processing with an absorptive region of the plate to begin the cooling of the substrate. The method and apparatus provided within allows for a controllable and effective means for thermally processing a substrate rapidly.
摘要翻译：提供了用于热处理基板的设备和方法。包含悬浮支撑组件的腔室，其构造成在衬底的加热和冷却期间将衬底定位在与板不同的距离处。在一个实施例中，板的表面上的多个开口构造成均匀地分布气体穿过衬底的径向表面。气体的分布可以在热处理期间将具有未反射回衬底的辐射能量与板的吸收区域耦合以开始冷却衬底。所提供的方法和装置允许用于快速热处理基板的可控和有效的装置。

3. 发明申请

WO2009120729A1 TEMPERATURE MEASUREMENT AND CONTROL OF WAFER SUPPORT IN THERMAL PROCESSING CHAMBER 审中-公开
标题翻译：温度测量和控制热处理室中的支撑
公开(公告)号：WO2009120729A1
公开(公告)日：2009-10-01
申请号：PCT/US2009/038156
申请日：2009-03-25
申请人： APPLIED MATERIALS, INC. , SORABJI, Khurshed , LERNER, Alexander, N. , RANISH, Joseph, M. , HUNTER, Aaron, M. , ADAMS, Bruce, E. , BEHDJAT, Mehran , RAMANUJAM, Rajesh, S.
发明人： SORABJI, Khurshed , LERNER, Alexander, N. , RANISH, Joseph, M. , HUNTER, Aaron, M. , ADAMS, Bruce, E. , BEHDJAT, Mehran , RAMANUJAM, Rajesh, S.
IPC分类号： H01L21/324 , H01L21/683 , H01L21/687
CPC分类号： H01L21/67109 , H01L21/67115 , H01L21/67248
摘要： Apparatus and methods for achieving uniform heating or cooling of a substrate during a rapid thermal process are disclosed. More particularly, apparatus and methods for controlling the temperature of an edge ring supporting a substrate and/or a reflector plate during a rapid thermal process to improve temperature uniformity across the substrate are disclosed, which include a thermal mass or plate adjacent the edge ring to heat or cool the edge ring.
摘要翻译：公开了用于在快速热处理期间实现基板的均匀加热或冷却的装置和方法。更具体地，公开了用于在快速热处理期间控制支撑衬底和/或反射板的边缘环的温度以改善衬底上的温度均匀性的装置和方法，其包括邻近边缘环到加热或冷却边缘环。

4. 发明申请

WO2014204731A1 LIGHT PIPE WINDOW STRUCTURE FOR THERMAL CHAMBER APPLICATIONS AND PROCESSES 审中-公开
标题翻译：用于热室应用和工艺的光管窗结构
公开(公告)号：WO2014204731A1
公开(公告)日：2014-12-24
申请号：PCT/US2014/041832
申请日：2014-06-11
申请人： APPLIED MATERIALS, INC.
发明人： RANISH, Joseph, M. , HUNTER, Aaron, Muir
IPC分类号： H01L21/324 , H01L21/683 , H01L21/02
CPC分类号： H01L21/67115 , G02B6/00 , G02B6/08 , G02B6/4249 , G02B6/4296 , H01L21/67109
摘要： A processing chamber is described. The processing chamber includes a chamber having an interior volume, a light pipe window structure coupled to the chamber, the light pipe window structure having a first transparent plate disposed within the interior volume of the chamber, and a radiant heat source coupled to a second transparent plate of the light pipe window structure in a position outside of the interior volume of the chamber, wherein the light pipe window structure includes a plurality of light pipe structures disposed between the first transparent plate and the second transparent plate.
摘要翻译：描述处理室。处理室包括具有内部容积的室，耦合到室的光管窗结构，光管窗结构具有设置在室的内部空间内的第一透明板，以及耦合到第二透明的辐射热源所述光管窗结构包括设置在所述第一透明板和所述第二透明板之间的多个光管结构。

5. 发明申请

WO2010002742A2 APPARATUS AND METHOD FOR MEASURING RADIATION ENERGY DURING THERMAL PROCESSING 审中-公开
标题翻译：用于测量热处理期间的辐射能量的装置和方法
公开(公告)号：WO2010002742A2
公开(公告)日：2010-01-07
申请号：PCT/US2009/048939
申请日：2009-06-26
申请人： APPLIED MATERIALS, INC. , RANISH, Joseph, M. , KOELMEL, Blake , HUNTER, Aaron
发明人： RANISH, Joseph, M. , KOELMEL, Blake , HUNTER, Aaron
IPC分类号： H01L21/66 , H01L21/324
CPC分类号： H01L22/10 , H01L21/67115 , H01L21/67248
摘要： Embodiments of the present invention provide apparatus and method for reducing heating source radiation influence in temperature measurement during thermal processing. In one embodiment of the present invention, background radiant energy, such as an energy source of a thermal processing chamber, is marked within a selected spectrum, a characteristic of the background is then determined by measuring radiant energy at a reference wavelength within the selected spectrum and a comparing wavelength just outside the selected spectrum.
摘要翻译：本发明的实施例提供用于减少热处理期间热源辐射对温度测量的影响的设备和方法。在本发明的一个实施例中，诸如热处理室的能量源之类的背景辐射能量被标记在选定光谱内，然后通过测量所选光谱内的参考波长处的辐射能量来确定背景的特性和一个比较波长就在选定的频谱之外。

6. 发明申请

WO2009126529A2 APPARATUS INCLUDING HEATING SOURCE REFLECTIVE FILTER FOR PYROMETRY 审中-公开
标题翻译：装置包括用于色度计的加热源反射滤光片
公开(公告)号：WO2009126529A2
公开(公告)日：2009-10-15
申请号：PCT/US2009/039443
申请日：2009-04-03
申请人： APPLIED MATERIALS, INC. , RANISH, Joseph, M. , HUNTER, Aaron, M. , KOELMEL, Blake, R.
发明人： RANISH, Joseph, M. , HUNTER, Aaron, M. , KOELMEL, Blake, R.
IPC分类号： H01L21/324
CPC分类号： H01L21/67115 , H01L21/67248
摘要： Methods and apparatus for processing substrates and measuring the temperature using radiation pyrometry are disclosed. A reflective layer is provided on a window of a processing chamber. A radiation source providing radiation in a first range of wavelengths heats the substrate, the substrate being transparent to radiation in a second range of wavelengths within the first range of wavelengths for a predetermined temperature range. Radiation within the second range of wavelength is reflected by the reflective layer.
摘要翻译：公开了用于处理衬底和使用辐射高温测量来测量温度的方法和设备。反射层设置在处理室的窗户上。提供第一波长范围内的辐射的辐射源加热衬底，衬底对于第一波长范围内的第二波长范围内的辐射对于预定温度范围是透明的。第二波长范围内的辐射由反射层反射。

7. 发明申请

WO2005045905A1 TAILORED TEMPERATURE UNIFORMITY 审中-公开
标题翻译：定制温度均匀
公开(公告)号：WO2005045905A1
公开(公告)日：2005-05-19
申请号：PCT/US2004/034811
申请日：2004-10-20
申请人： APPLIED MATERIALS, INC. , RAMACHANDRAN, Balasubramanian , RANISH, Joseph, M. , JALLEPALLY, Ravi , RAMAMURTHY, Sundar , ACHUTHARAMAN, Raman , HAAS, Brian , HUNTER, Aaron
发明人： RAMACHANDRAN, Balasubramanian , RANISH, Joseph, M. , JALLEPALLY, Ravi , RAMAMURTHY, Sundar , ACHUTHARAMAN, Raman , HAAS, Brian , HUNTER, Aaron
IPC分类号： H01L21/00
CPC分类号： H01L21/67103
摘要： Method and apparatus for obtaining a tailored heat transfer profile in a chamber housing a microprocessor manufacturing process, including estimating heat transfer properties of the chamber; estimating heat absorptive properties of a wafer; adjusting the physical characteristics of the chamber to correct the heat transfer properties; and utilizing the chamber for manufacturing microprocessors.
摘要翻译：用于在容纳微处理器制造过程的腔室中获得定制的传热轮廓的方法和装置，包括估计腔室的传热特性; 估计晶片的吸热性能; 调整室的物理特性以校正传热性能; 并利用该腔室制造微处理器。

8. 发明申请

WO2015123022A1 UPPER DOME WITH INJECTION ASSEMBLY 审中-公开
标题翻译：带注射装置的大面积
公开(公告)号：WO2015123022A1
公开(公告)日：2015-08-20
申请号：PCT/US2015/013347
申请日：2015-01-28
申请人： APPLIED MATERIALS, INC.
发明人： BRILLHART, Paul , CHANG, Anzhong , TONG, Edric , LO, Kin, Pong , MACK, James, Francis , YE, Zhiyuan , SHAH, Kartik , SANCHEZ, Errol, Antonio, C. , CARLSON, David, K. , KUPPURAO, Satheesh , RANISH, Joseph, M.
IPC分类号： H01L21/02
CPC分类号： C30B25/14 , C30B25/08 , C30B25/10 , H01L21/67115
摘要： Embodiments provided herein generally relate to an apparatus for delivering gas to a semiconductor processing chamber. An upper quartz dome of an epitaxial semiconductor processing chamber has a plurality of holes formed therein and precursor gases are provided into a processing volume of the chamber through the holes of the upper dome. Gas delivery tubes extend from the holes in the dome to a flange plate where the tubes are coupled to gas delivery lines. The gas delivery apparatus enables gases to be delivered to the processing volume above a substrate through the quartz upper dome.
摘要翻译：本文提供的实施方案通常涉及用于将气体输送到半导体处理室的装置。外延半导体处理室的上部石英圆顶具有形成在其中的多个孔，前体气体通过上部圆顶的孔设置在腔室的处理容积中。气体输送管从圆顶的孔延伸到法兰盘，在该法兰盘中管耦合到气体输送管线。气体输送装置使得气体能够通过石英上部圆顶被输送到衬底上方的处理体积。

9. 发明申请

WO2014179010A1 APPARATUS AND METHODS FOR LOW TEMPERATURE MEASUREMENT IN A WAFER PROCESSING SYSTEM 审中-公开
标题翻译：在WAFER加工系统中低温测量的装置和方法
公开(公告)号：WO2014179010A1
公开(公告)日：2014-11-06
申请号：PCT/US2014/033534
申请日：2014-04-09
申请人： APPLIED MATERIALS, INC.
发明人： RANISH, Joseph, M.
IPC分类号： H01L21/324 , H01L21/02
CPC分类号： G05D23/27 , H01L21/67115 , H01L21/67248
摘要： Implementations disclosed herein relate to methods and apparatus for zoned temperature control during a film forming process. In one implementation, a substrate processing apparatus is provided. The substrate processing apparatus comprises a vacuum chamber, a plurality of power supplies coupled with the plurality of thermal laps and a controller that adjusts the power supplies based on input from radiation sensors. The chamber includes a sidewall defining a processing region. A plurality of thermal lamps is positioned external to the processing region. A window is positioned between the plurality of thermal lamps and the processing region. A radiation source is disposed within the sidewall and oriented to direct radiation toward an area proximate a substrate support. A radiation sensor is disposed on the side of the substrate support opposite the plurality of thermal lamps to receive emitted radiation from the radiation source.
摘要翻译：本文公开的实施方式涉及在成膜过程中用于分区温度控制的方法和装置。在一个实施方式中，提供了一种基板处理装置。基板处理装置包括真空室，与多个热圈耦合的多个电源和基于辐射传感器的输入来调节电源的控制器。腔室包括限定加工区域的侧壁。多个热灯位于处理区域的外部。窗口位于多个热灯和处理区域之间。辐射源设置在侧壁内并且被定向成将辐射引向靠近衬底支撑件的区域。放射线传感器设置在与多个热灯相对的基板支架的侧面，以接收来自辐射源的辐射。

10. 发明申请

WO2009094275A3 APPARATUS AND METHOD FOR SUPPORTING, POSITIONING AND ROTATING A SUBSTRATE IN A PROCESSING CHAMBER 审中-公开
公开(公告)号：WO2009094275A3
公开(公告)日：2009-07-30
申请号：PCT/US2009/030996
申请日：2009-01-14
申请人： APPLIED MATERIALS, INC. , KOELMEL, Blake , LERNER, Alexander, N. , RANISH, Joseph, M. , SANGAM, Kedarnath , SORABJI, Khurshed
发明人： KOELMEL, Blake , LERNER, Alexander, N. , RANISH, Joseph, M. , SANGAM, Kedarnath , SORABJI, Khurshed
IPC分类号： H01L21/683 , H01L21/687 , H01L21/205 , H01L21/324
摘要： Embodiments of the invention contemplate a method, apparatus and system that are used to support, position, and rotate a substrate during processing. Embodiments of the invention may also include a method of controlling the transfer of heat between a substrate and substrate support positioned in a processing chamber. The apparatus and methods described herein remove the need for complex, costly and often unreliable components that would be required to accurately position and rotate a substrate during one or more processing steps, such as an rapid thermal processing (RTP) process, a chemical vapor deposition (CVD) process, a physical vapor deposition (PVD) process, atomic layer deposition (ALD) process, dry etching process, wet clean, and/or laser annealing process.

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