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1. 发明申请

WO2004034475A8 PLASMA OSCILLATION SWITCHING DEVICE 审中-公开
标题翻译：等离子体振荡开关装置
公开(公告)号：WO2004034475A8
公开(公告)日：2004-05-13
申请号：PCT/JP0312469
申请日：2003-09-30
申请人： MATSUSHITA ELECTRIC IND CO LTD , YOSHII SHIGEO , OTSUKA NOBUYUKI , MIZUNO KOICHI , SUZUKI ASAMIRA , YOKOGAWA TOSHIYA
发明人： YOSHII SHIGEO , OTSUKA NOBUYUKI , MIZUNO KOICHI , SUZUKI ASAMIRA , YOKOGAWA TOSHIYA
IPC分类号： H01L29/812 , H01L21/338 , H01L29/20 , H01L29/778 , H01L29/80 , H01L21/336 , H01L29/66 , H01L29/78
CPC分类号： H01L29/1029 , H01L29/2003 , H01L29/7785
摘要： A plasma oscillation switching device comprises a semiconductor substrate (101), a first barrier layer (103) formed on the substrate and made of a group III-V compound semiconductor, a channel layer (104) formed on the first barrier layer and made of a group III-V compound semiconductor, a second barrier layer (105) formed on the channel layer and made of a group III-V compound semiconductor, a source electrode (107), a gate electrode (109) and a drain electrode (108), these three electrodes being formed on the second barrier layer. The first barrier layer has an n-type diffusion layer (103a) and the second barrier layer has a p-type diffusion layer (105a). The band gap of the cannel layer is smaller than those of the first and second barrier layers. Two-dimensional electron gas (EG) accumulates in a conduction band on the boundary between the first barrier layer and the channel layer, while two-dimensional hole gas (HG) accumulates in a valence band of the boundary between the second barrier layer and the channel layer. The electrodes are formed on the second barrier layer via an insulating layer (106).
摘要翻译：等离子体振荡切换装置包括半导体衬底（101），形成在衬底上并由III-V族化合物半导体制成的第一阻挡层（103），形成在第一阻挡层上的沟道层（104） III-V族化合物半导体，形成在沟道层上并由III-V族化合物半导体构成的第二阻挡层（105），源电极（107），栅电极（109）和漏电极（108）），这三个电极形成在第二阻挡层上。第一阻挡层具有n型扩散层（103a），第二阻挡层具有p型扩散层（105a）。该沟槽层的带隙比第一和第二阻挡层的带隙小。二维电子气（EG）在第一阻挡层和沟道层之间的边界上的导带中积聚，而二维空穴气体（HG）积聚在第二阻挡层和第二阻挡层之间的边界的价带中通道层。电极经由绝缘层（106）形成在第二阻挡层上。

2. 发明申请

WO03058327A8 SURFACE TYPE OPTICAL MODULATOR AND ITS MANUFACTURING METHOD 审中-公开
标题翻译：表面型光学调制器及其制造方法
公开(公告)号：WO03058327A8
公开(公告)日：2004-11-25
申请号：PCT/JP0300004
申请日：2003-01-07
申请人： MATSUSHITA ELECTRIC IND CO LTD , OTSUKA NOBUYUKI , YOSHII SHIGEO , KITOH MASAHIRO , YOKOGAWA TOSHIYA
发明人： OTSUKA NOBUYUKI , YOSHII SHIGEO , KITOH MASAHIRO , YOKOGAWA TOSHIYA
IPC分类号： G02F1/015 , G02F1/017
CPC分类号： B82Y20/00 , G02F1/015 , G02F1/017 , G02F2202/32 , G02F2203/02 , G02F2203/10
摘要： An optical modulator comprises a first conductivity type first semiconductor layer (33), second conductivity type second semiconductor layer (31) bonded to the first semiconductor layer, second conductivity type third semiconductor layer (46), a dielectric layer (111) formed between the second and third semiconductor layers, an antenna electrode (32) having conductor pieces so arranged, in the dielectric layer, as to contact both the second and third semiconductor layers, net-shaped as the whole and separated from one another at intersections of the net shape, a first electrode (8) electrically connected to the first semiconductor layer, and a second electrode (7) electrically connected to the third semiconductor layer.
摘要翻译：光调制器包括第一导电类型的第一半导体层（33），接合到第一半导体层的第二导电类型的第二半导体层（31），第二导电类型的第三半导体层（46），形成在第一半导体层第二和第三半导体层，天线电极（32），其具有如此布置在电介质层中的导体片，以便与第二和第三半导体层接触，整体呈网状，并且在网的交叉处彼此分离电连接到第一半导体层的第一电极（8）和与第三半导体层电连接的第二电极（7）。

3. 发明申请

WO0243156A3 HEMT AND COMMUNICATION SYSTEM USING THE SAME 审中-公开
标题翻译： HEMT和通信系统使用它
公开(公告)号：WO0243156A3
公开(公告)日：2002-08-29
申请号：PCT/JP0110192
申请日：2001-11-21
申请人： MATSUSHITA ELECTRIC IND CO LTD , YOKOGAWA TOSHIYA , SUZUKI ASAMIRA , DEGUCHI MASAHIRO , YOSHII SHIGEO , FURUYA HIROYUKI
发明人： YOKOGAWA TOSHIYA , SUZUKI ASAMIRA , DEGUCHI MASAHIRO , YOSHII SHIGEO , FURUYA HIROYUKI
IPC分类号： H01L21/8252 , H01L27/06 , H01L29/20 , H01L29/778 , H03F3/60 , H04M1/00
CPC分类号： H01L27/0605 , H01L21/8252 , H01L29/2003 , H01L29/7785 , H03F3/601 , H03F2200/294
摘要： A HEMT has an InAlAs layer (202), an InGaAs layer (203), a multiple -doped InAlAs layer (204) composed of n-type doped layers (204a) and undoped layers (204b) which are alternately stacked, an InP layer (205), a Schottky gate electrode (210), a source electrode (209a), and a drain electrode (209b) on an InP substrate (201). When a current flows in a region (channel region) of the InGaAs layer (203) adjacent the interface between the InGaAs layer (203) and the multiple -doped InAlAs layer (204), a breakdown voltage in the OFF state can be increased, while resistance to the movement of carriers passing through the multiple -doped InAlAs layer (204) as a carrier supplying layer is reduced.
摘要翻译： HEMT具有InAlAs层（202），InGaAs层（203），由n型掺杂层（204a）和未掺杂层（204b）构成的多掺杂InAlAs层（204），交替层叠，InP层（205），在InP衬底（201）上的肖特基栅电极（210），源电极（209a）和漏电极（209b）。当电流在与InGaAs层（203）和多重掺杂InAlAs层（204）之间的界面相邻的InGaAs层（203）的区域（沟道区域）中流动时，可以增加关断状态下的击穿电压，而通过作为载体供给层的多掺杂InAlAs层（204）的载流子的移动的阻力减小。

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