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1. 发明申请

WO1996025792A1 ELASTIC SURFACE WAVE FUNCTIONAL DEVICE AND ELECTRONIC CIRCUIT USING THE ELEMENT 审中-公开
标题翻译：弹性表面波功能器件和使用元件的电子电路
公开(公告)号：WO1996025792A1
公开(公告)日：1996-08-22
申请号：PCT/JP1996000339
申请日：1996-02-16
申请人： ASAHI KASEI KOGYO KABUSHIKI KAISHA , YAMANOUCHI, Kazuhiko , KUZE, Naohiro , SHIBATA, Yoshihiko , KANNO, Yasuhito
发明人： ASAHI KASEI KOGYO KABUSHIKI KAISHA
IPC分类号： H03H09/145
CPC分类号： H03H9/02574 , H03H9/02566 , H03H9/64
摘要： An elastic surface wave functional device comprises a piezoelectric substrate or a multi-layered piezoelectric substrate (1) having a large electromechanical coupling factor, an active layer (3) of a semiconductor layer having large mobility and formed on the substrate (1), and a buffer layer (2) lattice matching the active layer. Futher, an input electrode (4) and an output electrode (5) are formed on both sides of the semiconductor layer. This elastic surface wave functional device generates a large degree of amplification at a low voltage. A transmission reception circuit of a high-frequency unit of a mobile communication equipment using this elastic surface wave functional device is obtained, too.
摘要翻译：弹性表面波功能器件包括压电基片或具有大机电耦合因子的多层压电基片（1），具有较大迁移率的半导体层的有源层（3）形成在基片（1）上，以及缓冲层（2）与有源层匹配。此外，在半导体层的两侧形成有输入电极（4）和输出电极（5）。该弹性表面波功能元件在低电压下产生大的放大率。也获得了使用该弹性表面波功能器件的移动通信设备的高频单元的发送接收电路。

2. 发明申请

WO1997017757A1 SURFACE ACOUSTIC WAVE CONVERTER AND ACOUSTIC WAVE FILTER USING THE SAME 审中-公开
标题翻译：表面声波变换器和声波滤波器
公开(公告)号：WO1997017757A1
公开(公告)日：1997-05-15
申请号：PCT/JP1996003284
申请日：1996-11-08
申请人： NGK INSULATORS, LTD. , TAKEUCHI, Masao , YAMANOUCHI, Kazuhiko , ODAGAWA, Hiroyuki , TANAKA, Mitsuhiro
发明人： NGK INSULATORS, LTD.
IPC分类号： H03H09/145
CPC分类号： H03H9/14547 , H03H9/02716 , H03H9/14505 , H03H9/14517 , H03H9/14552 , H03H9/14594
摘要： A surface acoustic wave converter which is suitable for anisotropic piezoelectric substrates having the NSPUDT characteristic. The converter is provided with a converter structure having an exciting electrode structure (21) and a reflector structure (22) formed on an anisotropic piezoeletric substrate that is so cut that the substrate has an NSPUDT characteristic. The structure (21) is provided with a positive electrode (23) having a plurality of electrode fingers arranged at a pitch lambda ( lambda is the wavelength of the basic surface acoustic wave) and a negative electrode (24) having an electrode finger between the electrode fingers of the positive electrode in such a way that the center-to-center distances between the fingers is lambda /2. The reflector structure (22) has a plurality of electrode fingers so arranged that the center-to-center distances between the fingers are lambda /2. The distance Lg between the structures (21 and 22) is Lg=(2n+1) lambda /4 (n is a positive integer).
摘要翻译：一种适用于具有NSPUDT特性的各向异性压电基片的表面声波转换器。转换器设置有具有激发电极结构（21）的转换器结构和形成在各向异性压电基板上的反射器结构（22），其被切割以使得基板具有NSPUDT特性。结构（21）设置有正极（23），其具有以间距λ（λ表示基本表面声波的波长）排列的多个电极指，以及具有电极指的负极（24）正极的电极指，使得手指之间的中心到中心的距离为λ/ 2。反射器结构（22）具有多个电极指，以使得手指之间的中心到中心的距离为λ/ 2。结构（21,22）之间的距离Lg为Lg =（2n + 1）λ/ 4（n为正整数）。

3. 发明申请

WO1990004285A1 STRUCTURE OF SURFACE ACOUSTIC WAVE TRANSDUCER HAVING SMALL ELECTRODE GAPS AND METHOD OF PRODUCING THE SAME 审中-公开
标题翻译：具有小电极晶体的表面波导传感器的结构及其生产方法
公开(公告)号：WO1990004285A1
公开(公告)日：1990-04-19
申请号：PCT/JP1989001046
申请日：1989-10-12
申请人： YAMANOUCHI, Kazuhiko
IPC分类号： H03H09/145
CPC分类号： H03H9/14505 , H03H3/08 , H03H9/02818 , H03H9/14541
摘要： In a surface acoustic wave transducer having a small gap among IDT electrodes, a metal oxide that is selectively formed only on the edges of the electrodes is interposed between the electrodes, to prevent the electrodes from short-circuiting and to facilitate the production enabling the production yields to be improved.
摘要翻译：在IDT电极之间具有小间隙的表面声波传感器中，仅在电极的边缘上选择性地形成的金属氧化物被插入在电极之间，以防止电极短路并促进生产收益率有待提高。

4. 发明申请

WO1998004040A1 SURFACE ACOUSTIC WAVE FUNCTIONAL DEVICE 审中-公开
标题翻译：表面声波功能装置
公开(公告)号：WO1998004040A1
公开(公告)日：1998-01-29
申请号：PCT/JP1997002506
申请日：1997-07-18
申请人： ASAHI KASEI KOGYO KABUSHIKI KAISHA , YAMANOUCHI, Kazuhiko , ODAGAWA, Hiroyuki , SATO, Wasuke , KUZE, Naohiro , GOTO, Hiromasa
发明人： ASAHI KASEI KOGYO KABUSHIKI KAISHA
IPC分类号： H03H09/145
CPC分类号： H03H9/02976 , G06G7/195
摘要： A surface acoustic wave functional element is provided with a semiconductor layer on a piezoelectric substrate or piezoelectric thin film substrate and utilizes the interaction between surface acoustic waves propagated on the surface of the substrate and electrons in the semiconductor layer. The semiconductor layer is formed outside the propagating path of the surface acoustic waves and provided with a plurality of grating electrodes perpendicularly to the propagating path, an active layer, and a buffer layer lattice-matched with the active layer. Using this surface acoustic wave functional device, a surface acoustic wave amplifier with a high amplification degree at a practical low voltage is provided, and a surface acoustic wave convolver having such a high efficiency that has not been achieved so far, is provided.
摘要翻译：表面声波功能元件在压电基板或压电薄膜基板上设置有半导体层，并利用在基板表面上传播的表面声波与半导体层中的电子之间的相互作用。半导体层形成在表面声波的传播路径的外侧，并且与传播路径垂直的多个栅格电极，有源层和与有源层进行晶格匹配的缓冲层。使用该声表面波功能器件，提供了在实际低电压下具有高放大度的表面声波放大器，并且提供了迄今尚未实现的具有如此高效率的声表面波卷积器。

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