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1. 发明申请

WO2012074889A3 ION IMPLANTER SYSTEM INCLUDING REMOTE DOPANT SOURCE, AND METHOD COMPRISING SAME 审中-公开
公开(公告)号：WO2012074889A3
公开(公告)日：2012-06-07
申请号：PCT/US2011/062168
申请日：2011-11-26
申请人： ADVANCED TECHNOLOGY MATERIALS, INC. , OLANDER, W., Karl , KAIM, Robert , SWEENEY, Joseph, D. , DESPRES, Joseph, R.
发明人： OLANDER, W., Karl , KAIM, Robert , SWEENEY, Joseph, D. , DESPRES, Joseph, R.
IPC分类号： H01L21/265 , H01J37/30
摘要： Dopant source gas supply arrangements and methods are described, wherein one or more dopant source gas supply vessels is contained inside an outer enclosure of an ion implantation system, e.g., in a gas box within such enclosure. In one implementation, a dopant source gas supply vessel is positioned in remote relationship to the gas box of the ion implantation system, with a dopant source gas local vessel in the gas box, and a supply line interconnecting the dopant source gas supply vessel in supply relationship to the dopant source gas local vessel, in which the supply line is adapted to flow dopant source gas from the supply vessel to the local vessel only when the ion implantation system is in a non-operational state, and to be evacuated or filled with an inert pressurized gas when the ion implantation system is in an operational state.

2. 发明申请

WO2011160105A2 ENDPOINT DETERMINATION FOR CAPILLARY-ASSISTED FLOW CONTROL 审中-公开
标题翻译：毛细管理流量控制的终点确定
公开(公告)号：WO2011160105A2
公开(公告)日：2011-12-22
申请号：PCT/US2011/041013
申请日：2011-06-18
申请人： ADVANCED TECHNOLOGY MATERIALS, INC. , SWEENEY, Joseph, D. , AVILA, Anthony, M. , WODJENSKI, Michael, J. , DESPRES, Joseph, R. , BAUM, Thomas, H.
发明人： SWEENEY, Joseph, D. , AVILA, Anthony, M. , WODJENSKI, Michael, J. , DESPRES, Joseph, R. , BAUM, Thomas, H.
IPC分类号： H01L21/66 , H01L21/02
CPC分类号： F17D3/01 , F17D3/00 , G05D7/0635 , H01J37/3171 , H01J2237/006 , H01J2237/30466 , H01L21/67017 , H01L21/67253 , Y10T137/0324 , Y10T137/86389
摘要： Apparatus and method for determining endpoint of a fluid supply vessel in which fluid flow is controlled through a flow passage disposed in an interior volume of the fluid supply vessel with a static flow restricting device and a selectively actuatable valve element upon establishing fluid flow. The endpoint determination can be employed to terminate fluid supply from the fluid supply vessel and/or to switch from a fluid-depleted supply vessel to a fresh vessel for continuity or renewal of fluid supply operation. The apparatus and method are suitable for use with fluidutilizing apparatus such as ion implanters.
摘要翻译：用于确定流体供应容器的端点的装置和方法，其中通过设置在流体供应容器的内部容积中的流动通道具有静态流动限制装置和在建立流体流动时可选择性致动的阀元件来控制流体流动。端点确定可以用于终止从流体供应容器供应的流体和/或从流体耗尽的供应容器切换到新鲜的容器，用于连续或更新流体供应操作。该设备和方法适用于离子注入机等流体化处理装置。

3. 发明申请

WO2011056515A2 ION IMPLANTATION SYSTEM AND METHOD 审中-公开
标题翻译：离子植入系统和方法
公开(公告)号：WO2011056515A2
公开(公告)日：2011-05-12
申请号：PCT/US2010/053977
申请日：2010-10-25
申请人： ADVANCED TECHNOLOGY MATERIALS, INC. , JONES, Edward, E. , YEDAVE, Sharad, N. , TANG, Ying , CHAMBERS, Barry, Lewis , KAIM, Robert , SWEENEY, Joseph, D. , BYL, Oleg , ZOU, Peng
发明人： JONES, Edward, E. , YEDAVE, Sharad, N. , TANG, Ying , CHAMBERS, Barry, Lewis , KAIM, Robert , SWEENEY, Joseph, D. , BYL, Oleg , ZOU, Peng
IPC分类号： H01J37/317 , H01L21/265
CPC分类号： H01L21/265 , C23C14/48 , C23C14/52 , H01J37/08 , H01J37/3171 , H01J37/32055 , H01J37/32412 , H01J37/32449 , H01J2237/006 , H01J2237/022
摘要： An ion implantation system and method, providing cooling of dopant gas in the dopant gas feed line, to combat heating and decomposition of the dopant gas by arc chamber heat generation, e.g., using boron source materials such as B2F4 or other alternatives to BF3. Various arc chamber thermal management arrangements are described, as well as modification of plasma properties, specific flow arrangements, cleaning processes, power management, eqillibrium shifting, optimization of extraction optics, detection of deposits in flow passages, and source life optimization, to achieve efficient operation of the ion implantation system.
摘要翻译：一种离子注入系统和方法，用于提供掺杂剂气体供给管线中的掺杂气体的冷却，以通过例如使用诸如B2F4之类的硼源材料或其他BF3替代物的电弧室发热来抵抗掺杂气体的加热和分解。描述了各种电弧室热管理布置，以及等离子体性质，特定流程布置，清洁过程，功率管理，平衡偏移，提取光学优化，流通道沉积物检测和源寿命优化等方面的改进，以实现高效率离子注入系统的操作。

4. 发明申请

WO2006101767A3 SYSTEM FOR DELIVERY OF REAGENTS FROM SOLID SOURCES THEREOF 审中-公开
标题翻译：用于从其固体来源递送试剂的系统
公开(公告)号：WO2006101767A3
公开(公告)日：2009-04-09
申请号：PCT/US2006008530
申请日：2006-03-09
申请人： ADVANCED TECH MATERIALS , MARGANSKI PAUL J , DIETZ JAMES I , SWEENEY JOSEPH D
发明人： MARGANSKI PAUL J , DIETZ JAMES I , SWEENEY JOSEPH D
IPC分类号： A62B7/08 , A61L9/00 , B01J7/00 , B01L99/00
CPC分类号： B01J7/00 , B01J2219/00094 , B01J2219/00141 , B01J2219/00146 , C23C14/48 , C23C14/564 , C23C16/4405 , C23C16/4481
摘要： A system (10) for delivery of reagent from a solid source thereof, comprising a structure (16, 22, 24) arranged to retain a solid source material (30) in confinement by at least a portion of the structure, for heating and generation of vapor from the solid source material by volatilization thereof, a heat source (82) arranged to heat the solid source material for such volatilization, and a vapor dispensing assembly (52, 54) arranged to discharge the vapor from the system. A high conductance valve (1510) is also described, suitable for use as a dispensing control valve for a reagent storage and dispensing vessel, e.g., a vessel containing a semiconductor manufacturing reagent that is dispensed at low pressure. The high conductance valve includes a valve body (1512) in which inlet and outlet passages are substantially perpendicular to one another, with their interior extremities communicating with a valve chamber (1536) containing a selectively positionable valve element movable between a fully open and fully closed position. Valve flow coefficient (CV) values on the order of 2.7 to 2.9 are achievable by such high conductance valve, enabling the valve to achieve superior dispensing operation even in extremely low pressure regimes, e.g., below 20 torr.
摘要翻译：一种用于从其固体源输送试剂的系统（10），包括结构（16,22,24），所述结构被布置成通过所述结构的至少一部分约束地固定固体源材料（30），用于加热和产生通过其固体来源于固体源材料的蒸汽，布置成加热用于这种挥发的固体源材料的热源（82）和布置成从系统排出蒸气的蒸气分配组件（52,54）。还描述了适用于试剂储存和分配容器的分配控制阀的高电导阀（1510），例如包含在低压下分配的半导体制造试剂的容器。高电导阀包括阀体（1512），入口和出口通道基本上彼此垂直，其内端与阀室（1536）连通，该阀室包含可选择性定位的阀元件，阀元件可在完全打开和完全关闭之间移动位置。通过这种高电导阀可以实现2.7至2.9量级的阀流量系数（CV）值，即使在极低压力条件下（例如低于二十托）也能实现优异的分配操作。

5. 发明申请

WO2009002893A3 COMPONENT FOR SOLAR ADSORPTION REFRIGERATION SYSTEM AND METHOD OF MAKING SUCH COMPONENT 审中-公开
标题翻译：太阳能吸附制冷系统的组件和制造这种组件的方法
公开(公告)号：WO2009002893A3
公开(公告)日：2009-02-19
申请号：PCT/US2008067824
申请日：2008-06-22
申请人： ADVANCED TECH MATERIALS , CARRUTHERS J DONALD , BOGGS KARL , WANG LUPING , WILSON SHAUN , ARNO JOSE I , MARGANSKI PAUL J , BILODEAU STEVEN M , ZOU PENG , BOBITA BRIAN , SWEENEY JOSEPH D , EDWARDS DOUGLAS
发明人： CARRUTHERS J DONALD , BOGGS KARL , WANG LUPING , WILSON SHAUN , ARNO JOSE I , MARGANSKI PAUL J , BILODEAU STEVEN M , ZOU PENG , BOBITA BRIAN , SWEENEY JOSEPH D , EDWARDS DOUGLAS
IPC分类号： F25B17/08 , F25B30/04 , F25B35/04
CPC分类号： B01J20/26 , B01J20/20 , B01J20/28054 , B01J20/28092 , B01J20/30 , B01J20/305 , B01J20/3078 , B01J2220/445 , C09K5/047 , F25B17/08 , F25B27/007 , F25B35/04 , F25B37/00 , F25B2500/01
摘要： An adsorption structure is described that includes at least one adsorbent member formed of an adsorbent material and at least one porous member provided in contact with a portion of the adsorbent member to allow gas to enter and exit the portion of the adsorbent member. Such adsorption structure is usefully employed in adsorbent-based refrigeration systems. A method also is described for producing an adsorbent material, in which a first polymeric material is provided having a first density and a second polymeric material is provided having a second density, in which the second polymeric material is in contact with the first polymeric material to form a structure. The structure is pyrolyzed to form a porous adsorbent material including a first region corresponding to the first polymeric material and a second region corresponding to the second polymeric material, in which at least one of the pore sizes and the pore distribution differs between the first region and the second region.
摘要翻译：描述了吸附结构，其包括由吸附剂材料形成的至少一个吸附构件和与吸附构件的一部分接触设置的至少一个多孔构件，以允许气体进入和离开吸附构件的该部分。这种吸附结构在吸附剂型制冷系统中有用。描述了一种用于生产吸附材料的方法，其中提供具有第一密度的第一聚合物材料和第二聚合物材料，其具有第二密度，其中第二聚合物材料与第一聚合物材料接触，形成一个结构。该结构被热解以形成多孔吸附材料，其包括对应于第一聚合物材料的第一区域和对应于第二聚合物材料的第二区域，其中孔径和孔分布中的至少一个在第一区域和第第二个地区。

6. 发明申请

WO2009002893A8 COMPONENT FOR SOLAR ADSORPTION REFRIGERATION SYSTEM AND METHOD OF MAKING SUCH COMPONENT 审中-公开
标题翻译：用于太阳能吸附制冷系统的组件及制造该组件的方法
公开(公告)号：WO2009002893A8
公开(公告)日：2008-12-31
申请号：PCT/US2008/067824
申请日：2008-06-22
申请人： ADVANCED TECHNOLOGY MATERIALS, INC. , CARRUTHERS, J., Donald , BOGGS, Karl , WANG, Luping , WILSON, Shaun , ARNO, Jose, I. , MARGANSKI, Paul, J. , BILODEAU, Steven, M. , ZOU, Peng , BOBITA, Brian , SWEENEY, Joseph, D. , EDWARDS, Douglas
发明人： CARRUTHERS, J., Donald , BOGGS, Karl , WANG, Luping , WILSON, Shaun , ARNO, Jose, I. , MARGANSKI, Paul, J. , BILODEAU, Steven, M. , ZOU, Peng , BOBITA, Brian , SWEENEY, Joseph, D. , EDWARDS, Douglas
IPC分类号： F25B17/08 , F25B30/04 , F25B35/04
摘要： An adsorption structure is described that includes at least one adsorbent member formed of an adsorbent material and at least one porous member provided in contact with a portion of the adsorbent member to allow gas to enter and exit the portion of the adsorbent member. Such adsorption structure is usefully employed in adsorbent-based refrigeration systems. A method also is described for producing an adsorbent material, in which a first polymeric material is provided having a first density and a second polymeric material is provided having a second density, in which the second polymeric material is in contact with the first polymeric material to form a structure. The structure is pyrolyzed to form a porous adsorbent material including a first region corresponding to the first polymeric material and a second region corresponding to the second polymeric material, in which at least one of the pore sizes and the pore distribution differs between the first region and the second region.
摘要翻译：描述了一种吸附结构，其包括由吸附材料形成的至少一个吸附构件和设置成与吸附构件的一部分接触以允许气体进入和离开该部分的至少一个多孔构件的吸附构件。这种吸附结构可用于基于吸附剂的制冷系统。还描述了一种制造吸附剂材料的方法，其中提供具有第一密度的第一聚合物材料和提供具有第二密度的第二聚合物材料，其中第二聚合物材料与第一聚合物材料接触以形成形成一个结构。该结构被热解以形成多孔吸附材料，其包括对应于第一聚合物材料的第一区域和对应于第二聚合物材料的第二区域，其中孔径和孔隙分布中的至少一个在第一区域和第二个区域。

7. 发明申请

WO2007127865A3 CLEANING OF SEMICONDUCTOR PROCESSING SYSTEMS 审中-公开
标题翻译：半导体加工系统的清洁
公开(公告)号：WO2007127865A3
公开(公告)日：2008-12-11
申请号：PCT/US2007067542
申请日：2007-04-26
申请人： ADVANCED TECH MATERIALS , DIMEO FRANK JR , DIETZ JAMES , OLANDER W KARL , KAIM ROBERT , BISHOP STEVEN E , NEUNER JEFFREY W , ARNO JOSE I , MARGANSKI PAUL J , SWEENEY JOSEPH D , ELDRIDGE DAVID , YEDAVE SHARAD , BYL OLEG , STAUF GREGORY T
发明人： DIMEO FRANK JR , DIETZ JAMES , OLANDER W KARL , KAIM ROBERT , BISHOP STEVEN E , NEUNER JEFFREY W , ARNO JOSE I , MARGANSKI PAUL J , SWEENEY JOSEPH D , ELDRIDGE DAVID , YEDAVE SHARAD , BYL OLEG , STAUF GREGORY T
IPC分类号： C25F1/00 , C25F3/12
CPC分类号： C23C14/564 , C23C16/4405 , H01J37/32412 , H01J37/32862
摘要： A method and apparatus for cleaning residue from components of semiconductor processing systems used in the fabrication of microelectronic devices. To effectively remove residue, the components are contacted with a gas-phase reactive material for sufficient time and under sufficient conditions to at least partially remove the residue. When the residue and the material from which the components are constructed are different, the gas-phase reactive material is selectively reactive with the residue and minimally reactive with the materials from which the components of the ion implanter are constructed. When the residue and the material from which the components are constructed is the same, then the gas-phase reactive material may be reactive with both the residue and the component part. Particularly preferred gas-phase reactive materials utilized comprise gaseous compounds such as XeF2, XeF4, XeF6, NF3, IF5, IF7, SF6, C2F6, F2, CF4, KrF2, Cl2, HCl, ClF3, ClO2, N2F4, N2F2, N3F, NFH2, NH2F, HOBr, Br2, C3F8, C4F8, C5F8, CHF3, CH2F2, CH3F, COF2, HF, C2HF5, C2H2F4, C2H3F3, C2H4F2, C2H5F, C3F6, and organochlorides such as COCl2, CCl4, CHCl3, CH2Cl2 and CH3Cl.
摘要翻译：一种清洁残留物的方法和装置，用于制造微电子装置中使用的半导体处理系统的组件。为了有效地除去残留物，将组分与气相反应性材料接触足够的时间和足够的条件以至少部分地除去残余物。当残留物和构成组分的材料不同时，气相反应性材料与残余物选择性反应，并与构成离子注入机的组分的材料具有最低的反应性。当残留物和构成组分的材料相同时，气相反应性材料可以与残留物和组分部分反应。使用的特别优选的气相反应性材料包括气态化合物如XeF 2，XeF 4，XeF 6，NF 3，IF 5，IF 7，SF 6，C 2 F 6，F 2，CF 4，KrF 2，Cl 2，HCl，ClF 3，ClO 2，N 2 F 4，N 2 F 2，N 3 F，，NH2F，HOBr，Br2，C3F8，C4F8，C5F8，CHF3，CH2F2，CH3F，COF2，HF，C2HF5，C2H2F4，C2H3F3，C2H4F2，C2H5F，C3F6和有机氯化物，如COCl2，CCl4，CHCl3，CH2Cl2和CH3Cl。

8. 发明申请

WO2006101767A2 SYSTEM FOR DELIVERY OF REAGENTS FROM SOLID SOURCES THEREOF 审中-公开
标题翻译：用于从其固体来源递送试剂的系统
公开(公告)号：WO2006101767A2
公开(公告)日：2006-09-28
申请号：PCT/US2006/008530
申请日：2006-03-09
申请人： ADVANCED TECHNOLOGY MATERIALS, INC. , MARGANSKI, Paul, J. , DIETZ, James, I. , SWEENEY, Joseph, D.
发明人： MARGANSKI, Paul, J. , DIETZ, James, I. , SWEENEY, Joseph, D.
IPC分类号： B01J16/00
CPC分类号： B01J7/00 , B01J2219/00094 , B01J2219/00141 , B01J2219/00146 , C23C14/48 , C23C14/564 , C23C16/4405 , C23C16/4481
摘要： A system (10) for delivery of reagent from a solid source thereof, comprising a structure (16, 22, 24) arranged to retain a solid source material (30) in confinement by at least a portion of the structure, for heating and generation of vapor from the solid source material by volatilization thereof, a heat source (82) arranged to heat the solid source material for such volatilization, and a vapor dispensing assembly (52, 54) arranged to discharge the vapor from the system. A high conductance valve (1510) is also described, suitable for use as a dispensing control valve for a reagent storage and dispensing vessel, e.g., a vessel containing a semiconductor manufacturing reagent that is dispensed at low pressure. The high conductance valve includes a valve body (1512) in which inlet and outlet passages are substantially perpendicular to one another, with their interior extremities communicating with a valve chamber (1536) containing a selectively positionable valve element movable between a fully open and fully closed position. Valve flow coefficient (C V ) values on the order of 2.7 to 2.9 are achievable by such high conductance valve, enabling the valve to achieve superior dispensing operation even in extremely low pressure regimes, e.g., below 20 torr.
摘要翻译：一种用于从其固体源输送试剂的系统（10），包括结构（16,22,24），所述结构被布置成通过所述结构的至少一部分约束地固定固体源材料（30），用于加热和产生通过其固体来源于固体源材料的蒸汽，布置成加热用于这种挥发的固体源材料的热源（82）和布置成从系统排出蒸气的蒸气分配组件（52,54）。还描述了适用于试剂储存和分配容器的分配控制阀的高电导阀（1510），例如包含在低压下分配的半导体制造试剂的容器。高电导阀包括阀体（1512），入口和出口通道基本上彼此垂直，其内端与阀室（1536）连通，该阀室包含可选择性定位的阀元件，阀元件可在完全打开和完全关闭之间移动位置。通过这种高电导阀可以实现2.7至2.9级的阀流量系数（C VAL）值，即使在极低压力条件下也能实现优异的分配操作，例如低于20托。

9. 发明申请

WO2005043588A3 GAS-USING FACILITY INCLUDING PORTABLE DRY SCRUBBER SYSTEM AND/OR OVER-PRESSURE CONTROL ARRANGEMENT 审中-公开
标题翻译：气体使用设备，包括便携式干燥系统和/或超压控制装置
公开(公告)号：WO2005043588A3
公开(公告)日：2005-11-17
申请号：PCT/US2004033916
申请日：2004-10-14
申请人： ADVANCED TECH MATERIALS , MARGANSKI PAUL J , SWEENEY JOSEPH D , SHREVE THEODORE A , OLANDER KARL W
发明人： MARGANSKI PAUL J , SWEENEY JOSEPH D , SHREVE THEODORE A , OLANDER KARL W
IPC分类号： B01D53/04 , H01L21/00 , F01N3/00 , B32B27/02
CPC分类号： H01L21/67046 , B01D53/0415 , B01D2251/30 , B01D2251/40 , B01D2251/60 , B01D2253/1124 , B01D2257/93 , B01D2258/0216 , B01D2259/40009 , B01D2259/40084 , B01D2259/402 , B01D2259/4525 , B01D2259/4541
摘要： A gas-using facility including a portable dry scrubber system and/or over-pressure control arrangement. The portable dry scrubber system is of a unitary modular form, accommodating transport and ready set-up, take-down, and redeployment in the process facility. The over-pressure control arrangement provides capability for release of over-pressure gas from a compressed gas storage vessel during an over-pressure event, e.g., overheating of a compressed gas cylinder during a semiconductor foundry fire, while avoiding the bulk release of the entire vessel contents that occurs when conventional pressure relief devices are employed.
摘要翻译：包括便携式干式洗涤器系统和/或过压控制装置的气体使用设备。便携式干式洗涤器系统具有单一的模块化形式，可以在过程设施中提供运输和准备安装，拆卸和重新部署。过压控制装置提供了在过压事件期间从压缩气体储存容器释放过压气体的能力，例如在半导体铸造火灾期间压缩气瓶的过热，同时避免了整体的大量释放当使用常规的压力释放装置时发生的容器内容物。

10. 发明申请

WO2005029542A3 APPARATUS AND METHOD FOR POINT-OF-USE TREATMENT OF EFFLUENT GAS STREAMS 审中-公开
公开(公告)号：WO2005029542A3
公开(公告)日：2005-03-31
申请号：PCT/US2004/029519
申请日：2004-09-09
申请人： ADVANCED TECHNOLOGY MATERIALS, INC. , ARNO, Jose, I. , STURM, Edward, A. , SWEENEY, Joseph, D.
发明人： ARNO, Jose, I. , STURM, Edward, A. , SWEENEY, Joseph, D.
IPC分类号： B01J8/04 , B01J19/30 , B01D53/34 , B01D53/40 , B01D53/68 , B01D53/78 , C01B17/00
摘要： Multi-stage abatement systems and methods of use to remove final traces of pollutants and hazardous substances such as fluorinated species from effluents generated by semiconductor manufacturing operations. The effluent is treated in a main abatement tool, in combination with a secondary polishing scrubber that utilizes a high efficiency abatement technique to remove the final traces of pollutants from the effluent gas. The polishing scrubber can utilize treatment units such as high retention time scrubber vessels, recirculating post scrubber beds, dry post scrubbers, catalytic systems for OF2 abatement, and/or UV radiation systems for OF2 abatement.

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