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1. 发明申请

WO2012174367A2 DEVICE WITH INVERTED LARGE SCALE LIGHT EXTRACTION STRUCTURES 审中-公开
标题翻译：具有反射大规模光提取结构的装置
公开(公告)号：WO2012174367A2
公开(公告)日：2012-12-20
申请号：PCT/US2012/042646
申请日：2012-06-15
申请人： SENSOR ELECTRONIC TECHNOLOGY, INC. , SHATALOV, Maxim S. , DOBRINSKY, Alexander , SHUR, Michael , GASKA, Remigijus
发明人： SHATALOV, Maxim S. , DOBRINSKY, Alexander , SHUR, Michael , GASKA, Remigijus
IPC分类号： H01L33/20 , H01L33/22
CPC分类号： H01L33/20 , B82Y20/00 , H01L33/22 , H01L2933/0083 , H01L2933/0091 , H01S5/0224 , H01S5/34333
摘要： An interface including roughness components for improving the propagation of radiation through the interface is provided. The interface includes a first profiled surface of a first layer comprising a set of large roughness components providing a first variation of the first profiled surface having a first characteristic scale and a second profiled surface of a second layer comprising a set of small roughness components providing a second variation of the second profiled surface having a second characteristic scale. The first characteristic scale is approximately an order of magnitude larger than the second characteristic scale. The surfaces can be bonded together using a bonding material, and a filler material also can be present in the interface.
摘要翻译：提供了包括用于改善辐射通过界面的传播的粗糙度分量的界面。界面包括第一层的第一成型表面，其包括一组大的粗糙度部件，其提供具有第一特征标尺的第一成型表面的第一变型和第二层的第二成型表面，所述第二成型表面包括一组小的粗糙度部件，具有第二特征标尺的第二成型表面的第二变型。第一特征量级比第二特征量级大约大一个数量级。表面可以使用接合材料粘合在一起，并且填料也可以存在于界面中。

2. 发明申请

WO2012174311A2 EMITTING DEVICE WITH IMPROVED EXTRACTION 审中-公开
标题翻译：具有改进提取的发射装置
公开(公告)号：WO2012174311A2
公开(公告)日：2012-12-20
申请号：PCT/US2012/042555
申请日：2012-06-15
申请人： SENSOR ELECTRONIC TECHNOLOGY, INC. , SHATALOV, Maxim S. , DOBRINSKY, Alexander , SHUR, Michael , GASKA, Remigijus
发明人： SHATALOV, Maxim S. , DOBRINSKY, Alexander , SHUR, Michael , GASKA, Remigijus
IPC分类号： H01L33/22
CPC分类号： H01L33/60 , F21V5/002 , H01L33/0045 , H01L33/007 , H01L33/20 , H01L33/22 , H01L2933/0083 , Y10T29/49
摘要： A profiled surface for improving the propagation of radiation through an interface is provided. The profiled surface includes a set of large roughness components providing a first variation of the profiled surface having a characteristic scale approximately an order of magnitude larger than a target wavelength of the radiation. The profiled surface also includes a set of small roughness components superimposed on the set of large roughness components and providing a second variation of the profiled surface having a characteristic scale on the order of the target wavelength of the radiation.
摘要翻译：提供了用于改善辐射通过界面的传播的异型表面。成形表面包括一组大的粗糙度部件，其提供成型表面的第一变化，其特征标度比辐射的目标波长大大大大约一个数量级。成形表面还包括一组小的粗糙度部件，叠加在该组粗糙度较大的部件上，并提供具有辐射目标波长级的特征刻度的成型表面的第二变型。

3. 发明申请

WO2012116353A1 LIGHT EMITTING DIODE WITH POLARIZATION CONTROL 审中-公开
标题翻译：具有极化控制的发光二极管
公开(公告)号：WO2012116353A1
公开(公告)日：2012-08-30
申请号：PCT/US2012/026669
申请日：2012-02-25
申请人： SENSORE ELECTONIC TECHNOLOGY, INC. , SHUR, Michael , GASKA, Remigijus
发明人： SHUR, Michael , GASKA, Remigijus
IPC分类号： H01L33/04 , H01L33/06
CPC分类号： H01L33/06 , H01L33/007 , H01L33/12 , H01S5/0224 , H01S5/0422 , H01S5/3201 , H01S5/32341
摘要： An improved light emitting heterostructure is provided. The heterorestructure includes an active region having a set of barrier layers and a set of quantum wells, each of which is adjoined by a barrier layer. The quantum wells have a delta doped p-type sub-layer located therein, which results in a change of the band structure of the quantum well. The change can reduce the effects of polarization in the quantum wells, which can provide improved light emission from the active region.
摘要翻译：提供改进的发光异质结构。异构结构包括具有一组阻挡层的有源区和一组量子阱，每个量子阱与势垒层相邻。量子阱具有位于其中的δ掺杂的p型子层，这导致量子阱的带结构的变化。这种改变可以减少量子阱中的极化的影响，这可以提供来自有源区域的改进的光发射。

4. 发明申请

WO2012068066A2 OHMIC CONTACT TO SEMICONDUCTOR 审中-公开
标题翻译： OHMIC与SEMICONDUCTOR联系
公开(公告)号：WO2012068066A2
公开(公告)日：2012-05-24
申请号：PCT/US2011/060729
申请日：2011-11-15
申请人： SENSOR ELECTRONIC TECHNOLOGY, INC. , GASKA, Remigijus , SHUR, Michael
发明人： GASKA, Remigijus , SHUR, Michael
IPC分类号： H01L21/28 , H01L33/00 , H01L21/328 , H01L29/86
CPC分类号： H01L29/452 , H01L21/28575 , H01L29/155 , H01L29/2003 , H01L29/205 , H01L29/417 , H01L33/06 , H01L33/32 , H01L33/38 , H01L33/40
摘要： An ohmic contact to a semiconductor layer including a heterostructure barrier layer and a metal layer adjacent to the heterostructure barrier layer is provided. The heterostructure barrier layer can form a two dimensional free carrier gas for the contact at a heterointerface of the heterostructure barrier layer and the semiconductor layer. The metal layer is configured to form a contact with the two dimensional free carrier gas.
摘要翻译：提供了与包括异质结构阻挡层和邻近异质结构阻挡层的金属层的半导体层的欧姆接触。异质结构阻挡层可以在异质结构阻挡层和半导体层的异质界面处形成用于接触的二维自由载气。金属层被配置成与二维无载体气体形成接触。

5. 发明申请

WO2011069140A3 SEMICONDUCTOR MATERIAL DOPING 审中-公开
标题翻译：半导体材料掺杂
公开(公告)号：WO2011069140A3
公开(公告)日：2011-09-29
申请号：PCT/US2010059003
申请日：2010-12-04
申请人： SENSOR ELECTRONIC TECHNOLOGY INC , SHATALOV MAXIM S , GASKA REMIGIJUS , YANG JINWEI , SHUR MICHAEL
发明人： SHATALOV MAXIM S , GASKA REMIGIJUS , YANG JINWEI , SHUR MICHAEL
IPC分类号： H01L21/265 , H01L29/778 , H01L33/00
CPC分类号： H01L29/122 , B82Y10/00 , H01L29/155 , H01L29/2003 , H01L29/201 , H01L33/06 , H01L33/32
摘要： A solution for designing and/or fabricating a structure including a quantum well and an adjacent barrier is provided. A target band discontinuity between the quantum well and the adjacent barrier is selected to coincide with an activation energy of a dopant for the quantum well and/or barrier. For example, a target valence band discontinuity can be selected such that a dopant energy level of a dopant in the adjacent barrier coincides with a valence energy band edge for the quantum well and/or a ground state energy for free carriers in a valence energy band for the quantum well. The quantum well and the adjacent barrier can be formed such that the actual band discontinuity corresponds to the target band discontinuity.
摘要翻译：提供了一种用于设计和/或制造包括量子阱和相邻屏障的结构的解决方案。选择量子阱和相邻屏障之间的目标频带不连续性以与量子阱和/或屏障的掺杂剂的活化能一致。例如，可以选择目标价带不连续性，使得相邻势垒中的掺杂剂的掺杂剂能级与量子阱的价态能带边缘和/或价态能带中的自由载流子的基态能量一致量子阱。可以形成量子阱和相邻势垒，使得实际波段不连续性对应于目标波段不连续。

6. 发明申请

WO2006062880A3 NITRIDE-BASED LIGHT EMITTING HETEROSTRUCTURE 审中-公开
标题翻译：基于氮化物的发光结构
公开(公告)号：WO2006062880A3
公开(公告)日：2009-06-04
申请号：PCT/US2005043866
申请日：2005-12-05
申请人： SENSOR ELECTRONIC TECH INC , GASKA REMIGIJUS , ZHANG JIANPING , SHUR MICHAEL
发明人： GASKA REMIGIJUS , ZHANG JIANPING , SHUR MICHAEL
IPC分类号： H01L33/06 , H01L33/32
CPC分类号： H01L33/06 , B82Y20/00 , H01L33/32 , H01S5/105 , H01S5/2009 , H01S5/3216 , H01S5/3407 , H01S5/3415 , H01S5/34333 , H01S5/34346
摘要： An improved nitride-based light emitting heterostructure is provided. The nitride-based light emitting heterostructure includes an electron supply layer and a hole supply layer with a light generating structure disposed there between. The light generating structure includes a set of barrier layers, each of which has a graded composition and a set of quantum wells, each of which adjoins at least one barrier layer. Additional features, such as a thickness of each quantum well, can be selected/incorporated into the heterostructure to improve one or more of its characteristics. Further, one or more additional layers that include a graded composition can be included in the heterostructure outside of the light generating structure. The graded composition layer(s) cause electrons to lose energy prior to entering a quantum well in the light generating structure, which enables the electrons to recombine with holes more efficiently in the quantum well.
摘要翻译：提供了一种改进的基于氮化物的发光异质结构。氮化物系发光异质结构包括电子供给层和在其间设置有发光结构的空穴供给层。光产生结构包括一组阻挡层，每个阻挡层具有梯度组成和一组量子阱，每个量子阱邻接至少一个势垒层。诸如每个量子阱的厚度的其它特征可以被选择/并入到异质结构中以改善其特征中的一个或多个。此外，包括渐变组合物的一个或多个附加层可以包含在发光结构外部的异质结构中。渐变组分层在光生成结构中进入量子阱之前导致电子失去能量，这使得电子能够在量子阱中更有效地与空穴重新结合。

7. 发明申请

WO2008022238A2 SHAPED CONTACT LAYER FOR LIGHT EMITTING HETEROSTRUCTURE 审中-公开
标题翻译：形状接触层用于发光结构
公开(公告)号：WO2008022238A2
公开(公告)日：2008-02-21
申请号：PCT/US2007/076071
申请日：2007-08-16
申请人： SENSOR ELECTRONIC TECHNOLOGY, INC. , BILENKO, Yuriy , GASKA, Remigijus , SHUR, Michael
发明人： BILENKO, Yuriy , GASKA, Remigijus , SHUR, Michael
IPC分类号： H01L33/00
CPC分类号： H01L33/38 , H01S5/0425
摘要： An improved light emitting heterostructure and/or device is provided, which includes a contact layer having a contact shape comprising one of: a clover shape with at least a third order axis of symmetry or an H-shape. The use of these shapes can provide one or more improved operating characteristics for the light emitting devices. The contact shapes can be used, for example, with contact layers on nitride-based devices that emit light having a wavelength in at least one of: the blue spectrum or the deep ultraviolet (UV) spectrum.
摘要翻译：提供了一种改进的发光异质结构和/或器件，其包括具有接触形状的接触层，接触形状包括具有至少三阶对称轴或H形的三叶形。使用这些形状可以为发光器件提供一个或多个改进的操作特性。接触形状可以例如使用发射具有以下蓝色光谱或深紫外（UV）光谱中的至少一个的波长的光的氮化物基器件上的接触层。

8. 发明申请

WO2007078349A2 MOUNTING STRUCTURE PROVIDING ELECTRICAL SURGE PROTECTION 审中-公开
标题翻译：提供电气防护的安装结构
公开(公告)号：WO2007078349A2
公开(公告)日：2007-07-12
申请号：PCT/US2006034935
申请日：2006-09-07
申请人： SENSOR ELECTRONIC TECH INC , BILENKO YURIY , GASKA REMIGIJUS , SHUR MICHAEL , SIMIN GRIGORY
发明人： BILENKO YURIY , GASKA REMIGIJUS , SHUR MICHAEL , SIMIN GRIGORY
IPC分类号： H05K1/16 , H05K3/30
CPC分类号： H01L23/62 , H01L25/167 , H01L33/62 , H01L2924/0002 , H01L2924/3011 , Y10T29/4913 , Y10T29/49169 , Y10T29/53174 , H01L2924/00
摘要： A solution for protecting an electronic device from an electrical surge using a mounting structure is provided. In particular, the mounting structure comprises a conductive material and is electrically connected to the protected electrical device. The conductive material and/or mounting structure can have one or more properties that prevent the mounting structure from adversely impacting operation of the electronic device during normal operation, but enables the mounting structure to provide an alternative electrical path during the electrical surge.
摘要翻译：提供了一种使用安装结构来保护电子设备免受电涌的解决方案。特别地，安装结构包括导电材料并且电连接到受保护的电气装置。导电材料和/或安装结构可以具有防止安装结构在正常操作期间不利地影响电子设备的操作的一个或多个特性，但是使安装结构能够在电涌期间提供替代的电路径。

9. 发明申请

WO2021081017A1 SMART VISUAL DISPLAY 审中-公开
公开(公告)号：WO2021081017A1
公开(公告)日：2021-04-29
申请号：PCT/US2020/056550
申请日：2020-10-21
申请人： SHUR, Michael
发明人： SHUR, Michael
IPC分类号： G09G3/22 , G09G3/32 , G09G3/34
摘要： One embodiment provides a computing device. The computing device is configured to couple to a display. The computing device includes an ambient detection module configured to detect a characteristic of ambient light relative to at least a portion of a display area of the display. The computing device further includes a displayed image optimization module configured to optimize a feature of at least a portion of a displayed image based, at least in part, on the characteristic of the ambient light.

10. 发明申请

WO2013023197A3 EMITTING DEVICE WITH COMPOSITIONAL AND DOPING INHOMOGENEITIES IN SEMICONDUCTOR LAYERS 审中-公开
标题翻译：在半导体层中具有组成和掺杂不均匀性的发射器件
公开(公告)号：WO2013023197A3
公开(公告)日：2013-04-18
申请号：PCT/US2012050486
申请日：2012-08-11
申请人： SENSOR ELECTRONIC TECHNOLOGY INC , SHUR MICHAEL , SHATALOV MAXIM S , DOBRINSKY ALEXANDER , GASKA REMIGIJUS , YANG JINWEI
发明人： SHUR MICHAEL , SHATALOV MAXIM S , DOBRINSKY ALEXANDER , GASKA REMIGIJUS , YANG JINWEI
IPC分类号： H01L33/04 , H01L33/06
CPC分类号： H01L29/15 , B82Y20/00 , H01L21/0254 , H01L33/06 , H01S5/0421 , H01S5/3216 , H01S5/342 , H01S5/34333
摘要： A device including one or more layers with lateral regions configured to facilitate the transmission of radiation through the layer and lateral regions configured to facilitate current flow through the layer is provided. The layer can comprise a short period superlattice, which includes barriers alternating with wells. In this case, the barriers can include both transparent regions, which are configured to reduce an amount of radiation that is absorbed in the layer, and higher conductive regions, which are configured to keep the voltage drop across the layer within a desired range.
摘要翻译：提供了一种包括一个或多个层的器件，所述层具有被配置为促进辐射穿过所述层的透射的侧向区域和被配置为促进电流流过所述层的侧向区域。该层可以包括短周期超晶格，其包括与阱交替的势垒。在这种情况下，阻挡层可以包括被配置为减少吸收在该层中的辐射量的透明区域和被配置为将穿过该层的电压降保持在期望范围内的较高导电区域两者。

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