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1. 发明申请

WO2009058408A1 METHODS OF PREPARING CLUSTERBORON 审中-公开
标题翻译：聚醚砜的制备方法
公开(公告)号：WO2009058408A1
公开(公告)日：2009-05-07
申请号：PCT/US2008/012473
申请日：2008-11-03
申请人： SEMEQUIP, INC. , COOK, Kevin, S. , OXFORD, Mark
发明人： COOK, Kevin, S. , OXFORD, Mark
IPC分类号： C01B6/10
CPC分类号： C01B35/026 , C01B6/10 , C01B35/023
摘要： The invention provides new methods for synthesis of ClusterBoron (B 18 H 22 ). Preferred methods of the invention include generation of the conjugate acid of B 20 H I 8 2- and degradation of the acid in solution to produce B 18 H 22 in high yields and high purity. The invention further provides isotopically enriched boranes, particularly isotopically enriched 10 B 18 H 22 and 11 B 18 H 22 .
摘要翻译：本发明提供了用于合成ClusterBoron（B18H22）的新方法。本发明优选的方法包括生成B20HI8 2-的共轭酸，并在溶液中降解酸以产生高产率和高纯度的B18H22。本发明还提供同位素富集的硼烷，特别是同位素富集的10B18H22和11B18H22。

2. 发明申请

WO2009058405A1 METHODS OF PREPARING CLUSTERBORON 审中-公开
标题翻译：聚醚砜的制备方法
公开(公告)号：WO2009058405A1
公开(公告)日：2009-05-07
申请号：PCT/US2008/012469
申请日：2008-11-03
申请人： SEMEQUIP, INC. , COOK, Kevin, S.
发明人： COOK, Kevin, S.
IPC分类号： C01B6/10
CPC分类号： C01B6/10 , C01B35/023
摘要： The invention provides new methods for synthesis of ClusterBoron (B 18 H 22 ). Preferred methods of the invention include in situ generation of the conjugate acid of B 20 H 18 2- and degradation of the acid in solution to produce B 18 H 22 in high yields and high purity. The invention further provides isotopically enriched boranes, particularly isotopically enriched 10 B) 18 H 22 and 11 B 18 H 22 .
摘要翻译：本发明提供了用于合成ClusterBoron（B18H22）的新方法。本发明的优选方法包括原位产生B20H182-的共轭酸，并在溶液中降解酸以产生高产率和高纯度的B18H22。本发明还提供同位素富集的硼烷，特别是同位素富集的10B）18H22和11B18H22。

3. 发明申请

WO2008147846A1 METHOD AND SYSTEM FOR EXTRACTING ION BEAMS COMPOSED OF MOLECULAR IONS (CLUSTER ION BEAM EXTRACTION SYSTEM) 审中-公开
标题翻译：用于提取分子离子的离子束（聚束离子束提取系统）的方法和系统
公开(公告)号：WO2008147846A1
公开(公告)日：2008-12-04
申请号：PCT/US2008/064475
申请日：2008-05-22
申请人： SEMEQUIP, INC. , HORSKY, Thomas, N. , HAHTO, Sami, K.
发明人： HORSKY, Thomas, N. , HAHTO, Sami, K.
IPC分类号： H01J27/00
CPC分类号： H01J49/06
摘要： A new type of triode extraction system, a Cluster Ion Beam Extraction System, is disclosed for broad energy range cluster ion beam extraction applications while still being applicable to atomic and molecular ion species as well. The extraction aperture plate contours are set to minimize the beam cross over and at the same time shield the source from excess extraction electric fields thus allowing smaller values of the extraction gap. In addition, a novel focusing feature is integrated into these new optics which allows the beam to be either focused or de-focused in the non-dispersive plane by using a bipolar bias voltage of only a few kV over a broad range of beam energy. This is a superior solution to a stand-alone electrostatic lens solution, for example an einzel lens, which would require tens of kV of bias voltage in order to be able to focus an energetic beam.
摘要翻译：公开了一种新型的三极管提取系统，即群离子束提取系统，用于宽能量范围的簇离子束提取应用，同时仍适用于原子和分子离子物种。提取孔径板轮廓被设置为最小化束交叉并且同时将源遮蔽于过量的提取电场，从而允许较小的提取间隙值。此外，将新颖的聚焦特征集成到这些新的光学器件中，其允许光束在非分散平面中被聚焦或去聚焦，通过在宽范围的光束能量上使用仅几kV的双极偏置电压。这是独立静电透镜解决方案的优越解决方案，例如双面透镜，其将需要几十kV的偏置电压，以便能够聚焦能量束。

4. 发明申请

WO2007146904A3 VAPORIZER 审中-公开
标题翻译：喷雾器
公开(公告)号：WO2007146904A3
公开(公告)日：2008-06-12
申请号：PCT/US2007070941
申请日：2007-06-12
申请人： SEMEQUIP INC , SACCO GEORGE , OVED DROR , ADAMS DOUGLAS R , HARNETT DAVID J , HORSKY THOMAS N
发明人： SACCO GEORGE , OVED DROR , ADAMS DOUGLAS R , HARNETT DAVID J , HORSKY THOMAS N
IPC分类号： H01J27/00
CPC分类号： C23C14/48 , C23C14/228 , H01J37/02 , H01J37/32412 , H01J2237/006 , H01J2237/022 , H01J2237/08 , H01J2237/31701
摘要： A vaporizer unit to heat solid feed material to a temperature that produces vapor to be ionized, has efficient construction and numerous effective safety features. The heater is located in a detachable top closure member, and serves to maintain a valve in the top closure member at temperature higher than the temperature to which the solid material is heated. The top section is a heat distributor to an interface with the bottom section, the side and bottom walls of the bottom distributing heat received from the interface to surfaces of the cavity exposed to the feed material. Borane, decarborane, carbon clusters and other large molecules are vaporized for ion implantation.
摘要翻译：将固体原料加热至产生要离子化的蒸汽的温度的蒸发器单元，具有有效的结构和许多有效的安全特征。加热器位于可拆卸顶部封闭构件中，并且用于在高于固体材料被加热的温度的温度下将阀门保持在顶部封闭构件中。顶部是与底部部分的界面的热分配器，底部的侧壁和底壁分配从暴露于进料的空腔的界面的表面接收的热量。硼烷，癸二硼烷，碳簇等大分子被蒸发用于离子注入。

5. 发明申请

WO2007146394A2 ION BEAM APPARATUS AND METHOD FOR ION IMPLANTATION 审中-公开
标题翻译：离子束设备和离子植入方法
公开(公告)号：WO2007146394A2
公开(公告)日：2007-12-21
申请号：PCT/US2007013984
申请日：2007-06-13
申请人： SEMEQUIP INC , GLAVISH HILTON F , JACOBSON DALE CONRAD , HORSKY THOMAS N , HAHTO SAMI K
发明人： GLAVISH HILTON F , JACOBSON DALE CONRAD , HORSKY THOMAS N , HAHTO SAMI K
IPC分类号： H01J33/02
CPC分类号： H01J37/3171 , H01J37/05 , H01J37/09 , H01J2237/0044 , H01J2237/0455 , H01J2237/047 , H01J2237/0492 , H01J2237/057 , H01J2237/14 , H01J2237/30477 , H01J2237/31703 , H01L21/26513
摘要： A multipurpose ion implanter beam line configuration constructed for enabling implantation of common monatomic dopant ion species and cluster ions, the beam line configuration having a mass analyzer magnet defining a pole gap of substantial width between ferromagnetic poles of the magnet and a mass selection aperture, the analyzer magnet sized to accept an ion beam from a slot-form ion source extraction aperture of at least about 80 mm height and at least about 7 mm width, and to produce dispersion at the mass selection aperture in a plane corresponding to the width of the beam, the mass selection aperture capable of being set to a mass- selection width sized to select a beam of the cluster ions of the same dopant species but incrementally differing molecular weights, the mass selection aperture also capable of being set to a substantially narrower mass-selection width and the analyzer magnet having a resolution at the mass selection aperture sufficient to enable selection of a beam of monatomic dopant ions of substantially a single atomic or molecular weight.
摘要翻译：多用途离子植入物束线配置被构造用于使得能够注入常见的单原子掺杂剂离子种类和簇离子，束线配置具有质量分析器磁体，该质量分析器磁体在磁体的铁磁极和质量选择孔之间限定相当宽度的极间距，分析器磁体的尺寸设计成接受来自至少约80mm高度和至少约7mm宽度的槽形离子源提取孔的离子束，并且在与质量选择孔的宽度相对应的平面中产生在质量选择孔处的色散光束，质量选择孔能够被设置为质量选择宽度，其大小用于选择相同掺杂物种类的簇离子的束，但是递增地不同的分子量，质量选择孔也能够被设定为基本上更窄的质量选择宽度和质量选择孔径处的分辨率足以能够选择光束的分析器磁体单原子或分子量的单原子掺杂离子。

6. 发明申请

WO2004003990A1 METHOD OF MANUFACTURING CMOS DEVICES BY THE IMPLANTATION OF N- AND P-TYPE CLUSTER IONS AND NEGATIVE IONS 审中-公开
标题翻译：通过植入N型和P型聚集体离子和负离子制造CMOS器件的方法
公开(公告)号：WO2004003990A1
公开(公告)日：2004-01-08
申请号：PCT/US2003/017839
申请日：2003-06-06
申请人： SEMEQUIP, INC. , HORSKY, Thomas, N. , JACOBSON, Dale, C. , KRULL, Wade, A.
发明人： HORSKY, Thomas, N. , JACOBSON, Dale, C. , KRULL, Wade, A.
IPC分类号： H01L21/425
CPC分类号： H01L21/823814 , H01J2237/31701 , H01L21/26513 , H01L21/26566 , H01L21/2658 , H01L21/425 , H01L21/823842
摘要： An ion implantation system (10) is described for the implantation of cluster ions into semiconductoe substrates for semiconductor device manufacturing. A method of manufacturing a semiconductor device is described, wherein clusters of N-and P-type dopants are implanted to form the transistor in CMOS devices. For example, As4Hx+ clusters and either B10Hx or B10HX+ clusters are used as sources of As and B doping, respectively, during the implants. An ion implantation system (10) is described for the implantation of cluster ions into semiconducteur substrates for semiconductor device manufacturing.
摘要翻译：描述了用于将簇离子注入用于半导体器件制造的半导体衬底中的离子注入系统（10）。描述制造半导体器件的方法，其中注入N和P型掺杂剂的簇以在CMOS器件中形成晶体管。例如，As4Hx +簇和B10Hx或B10HX +簇分别用作植入物中As和B掺杂的来源。描述了用于将簇离子注入用于半导体器件制造的半导体衬底中的离子注入系统（10）。

7. 发明申请

WO2007146942A3 VAPOR DELIVERY SYSTEM USEFUL WITH ION SOURCES AND VAPORIZERS FOR USE IN SUCH SYSTEM 审中-公开
标题翻译：使用离子源和蒸发器用于这种系统的蒸气输送系统
公开(公告)号：WO2007146942A3
公开(公告)日：2008-10-16
申请号：PCT/US2007071010
申请日：2007-06-12
申请人： SEMEQUIP INC , ADAMS DOUGLAS R , OVED DROR , HORSKY THOMAS N
发明人： ADAMS DOUGLAS R , OVED DROR , HORSKY THOMAS N
IPC分类号： F16D49/00
CPC分类号： C23C14/48 , C23C14/228 , H01J37/02 , H01J37/32412 , H01J2237/006 , H01J2237/022 , H01J2237/08 , H01J2237/31701
摘要： Vapor delivery systems and methods that control the heating and flow of vapors from solid feed material, especially material that comprises cluster molecules for semiconductor manufacture. The systems and methods safely and effectively conduct the vapor to a point of utilization, especially to an ion source for ion implantation. Ion beam implantation is shown employing ions from the cluster materials. The vapor delivery system includes reactive gas cleaning of the ion source, control systems and protocols, wide dynamic range flow-control systems and vaporizer selections that are efficient and safe. Borane, decarborane, carboranes, carbon clusters and other large molecules are vaporized for ion implantation. Such systems are shown cooperating with novel vaporizers, ion sources, and reactive cleaning systems.
摘要翻译：控制来自固体进料的蒸气的加热和流动的蒸气输送系统和方法，特别是包含用于半导体制造的聚簇分子的材料。这些系统和方法安全有效地将蒸汽传导到一个利用点，特别是离子源的离子源。示出了离子束注入使用来自簇材料的离子。蒸汽输送系统包括离子源的反应气体清洁，控制系统和协议，宽动态范围流量控制系统和有效和安全的蒸发器选择。硼烷，癸二硼烷，碳硼烷，碳簇和其他大分子蒸发用于离子注入。示出了这样的系统与新型蒸发器，离子源和反应性清洁系统协作。

8. 发明申请

WO2007146942A2 VAPOR DELIVERY SYSTEM USEFUL WITH ION SOURCES AND VAPORIZERS FOR USE IN SUCH SYSTEM 审中-公开
标题翻译：使用离子源和蒸发器用于这种系统的蒸气输送系统
公开(公告)号：WO2007146942A2
公开(公告)日：2007-12-21
申请号：PCT/US2007/071010
申请日：2007-06-12
申请人： SEMEQUIP, INC. , ADAMS, Douglas, R. , OVED, Dror , HORSKY, Thomas, N.
发明人： ADAMS, Douglas, R. , OVED, Dror , HORSKY, Thomas, N.
IPC分类号： F24C15/18
CPC分类号： C23C14/48 , C23C14/228 , H01J37/02 , H01J37/32412 , H01J2237/006 , H01J2237/022 , H01J2237/08 , H01J2237/31701
摘要： Vapor delivery systems and methods that control the heating and flow of vapors from solid feed material, especially material that comprises cluster molecules for semiconductor manufacture. The systems and methods safely and effectively conduct the vapor to a point of utilization, especially to an ion source for ion implantation. Ion beam implantation is shown employing ions from the cluster materials. The vapor delivery system includes reactive gas cleaning of the ion source, control systems and protocols, wide dynamic range flow-control systems and vaporizer selections that are efficient and safe. Borane, decarborane, carboranes, carbon clusters and other large molecules are vaporized for ion implantation. Such systems are shown cooperating with novel vaporizers, ion sources, and reactive cleaning systems.
摘要翻译：控制来自固体进料的蒸气的加热和流动的蒸气输送系统和方法，特别是包含用于半导体制造的聚簇分子的材料。这些系统和方法安全有效地将蒸汽传导到一个利用点，特别是离子源的离子源。示出了离子束注入使用来自簇材料的离子。蒸汽输送系统包括离子源的反应气体清洁，控制系统和协议，宽动态范围流量控制系统和有效和安全的蒸发器选择。硼烷，癸二硼烷，碳硼烷，碳簇和其他大分子蒸发用于离子注入。示出了这样的系统与新型蒸发器，离子源和反应性清洁系统协作。

9. 发明申请

WO2007146395A2 ION BEAM APPARATUS AND METHOD EMPLOYING MAGNETIC SCANNING 审中-公开
标题翻译：离子束设备和使用磁性扫描的方法
公开(公告)号：WO2007146395A2
公开(公告)日：2007-12-21
申请号：PCT/US2007/013985
申请日：2007-06-13
申请人： SEMEQUIP, INC. , GLAVISH, Hilton, F. , JACOBSON, Dale, Conrad , HORSKY, Thomas, N. , HAHTO, Sami, K. , HAMAMOTO, Nariaki , NAITO, Masao , NAGAI, Nobuo
发明人： GLAVISH, Hilton, F. , JACOBSON, Dale, Conrad , HORSKY, Thomas, N. , HAHTO, Sami, K. , HAMAMOTO, Nariaki , NAITO, Masao , NAGAI, Nobuo
IPC分类号： H01J37/05
CPC分类号： H01J37/3171 , H01J37/05 , H01J37/09 , H01J2237/0044 , H01J2237/0455 , H01J2237/047 , H01J2237/0492 , H01J2237/057 , H01J2237/14 , H01J2237/30477 , H01J2237/31703 , H01L21/26513
摘要： A multipurpose ion implanter beam line configuration comprising a mass analyzer magnet followed by a magnetic scanner and magnetic collimator combination that introduce bends to the beam path, the beam line constructed for enabling implantation of common monatomic dopant ion species cluster ions, the beam line configuration having a mass analyzer magnet defining a pole gap of substantial width between ferromagnetic poles of the magnet and a mass selection aperture, the analyzer magnet sized to accept an ion beam from a slot-form ion source extraction aperture of at least about 80 mm height and at least about 7 mm width, and to produce dispersion at the mass selection aperture in a plane corresponding to the width of the beam, the mass selection aperture capable of being set to a mass-selection width sized to select a beam of the cluster ions of the same dopant species but incrementally differing molecular weights, the mass selection aperture also capable of being set to a substantially narrower mass-selection width and the analyzer magnet having a resolution at the mass selection aperture sufficient to enable selection of a beam of monatomic dopant ions of substantially a single atomic or molecular weight, the magnetic scanner and magnetic collimator being constructed to successively bend the ion beam in the same sense, which is in the opposite sense to that of the bend introduced by the analyzer magnet of the beam line.
摘要翻译：多用途离子注入机束线配置，其包括质量分析器磁体，随后是磁扫描仪和将准弯曲引导到光束路径的光束线，所述光束线被构造用于使得能够注入常见的单原子掺杂离子簇簇离子，所述束线配置具有质量分析器磁体限定磁体的铁磁极之间的相当宽度的极隙和质量选择孔，分析器磁体的尺寸设计成接受来自至少约80mm高度的槽形离子源提取孔的离子束，并且在至少约7mm的宽度，并且在与所述梁的宽度相对应的平面中的所述质量选择孔处产生分散体，所述质量选择孔能够被设置为质量选择宽度，所述质量选择宽度的尺寸被选择为选择聚束离子的束相同的掺杂剂种类但递增不同的分子量，质量选择孔径也能够被大大地设定质量选择宽度较窄的分析器磁体和质量选择孔径处的分辨率足以能够选择基本上单原子或分子量的单原子掺杂离子束，磁扫描器和磁准直器被构造为连续弯曲离子在相同意义上的光束，其与由光束线的分析器磁体引入的弯曲的方向相反。

10. 发明申请

WO2005059942A3 METHOD AND APPARATUS FOR EXTENDING EQUIPMENT UPTIME IN ION IMPLANTATION 审中-公开
标题翻译：用于延长离子植入装置的方法和装置
公开(公告)号：WO2005059942A3
公开(公告)日：2005-10-13
申请号：PCT/US2004041525
申请日：2004-12-09
申请人： SEMEQUIP INC , HORSKY THOMAS N , MILGATE ROBERT W III , SACCO GEORGE P JR , JACOBSON DALE CONRAD , KRULL WADE ALLEN
发明人： HORSKY THOMAS N , MILGATE ROBERT W III , SACCO GEORGE P JR , JACOBSON DALE CONRAD , KRULL WADE ALLEN
IPC分类号： H01J20060101 , H01J7/24 , H01J37/08 , H01J37/317
CPC分类号： H01J37/3171 , C23C14/48 , C23C14/564 , H01J9/38 , H01J27/02 , H01J27/024 , H01J37/08 , H01J2209/017 , H01J2237/006 , H01J2237/022 , Y10T137/0357 , Y10T137/7759 , Y10T137/776 , Y10T137/7761 , Y10T137/85954 , Y10T137/85978 , Y10T137/85986 , Y10T137/86002
摘要： The service lifetime of an ion source (400) is enhanced or prolonged by the source having provisions for ire-situ etch cleaning of the ion source (400) and of an extraction electrode (405), using reactive halogen gases (F1, F2), and by having features that extend the service duration between cleanings. The latter include accurate vapor flow control, accurate focusing of the ion beam optics, and thermal control of the extraction electrode that prevents formation of deposits or prevents electrode destruction. An apparatus comprised of an ion source for generating dopant ions for semiconductor wafer processing is coupled to a remote plasma source which delivers F or Cl ions to the first ion source for the purpose of cleaning deposits in the first ion source and the extraction electrode. These methods and apparatus enable long equipment uptime when running condensable feed gases such as sublimated vapor sources, and are particularly applicable for use with so-called cold ion sources. Methods and apparatus are described which enable long equipment uptime when decaborane and octadecarborane are used as feed materials, as well as when vaporized elemental arsenic and phosphorus are used, and which serve to enhance beam stability during ion implantation.
摘要翻译：离子源（400）的使用寿命通过使用反应性卤素气体（F1，F2）的离子源（400）和提取电极（405）的ire-situ蚀刻清洁的源来增强或延长，，并具有延长清洁之间服务持续时间的功能。后者包括准确的蒸汽流量控制，离子束光学的精确聚焦，以及防止沉积物形成或防止电极破坏的引出电极的热控制。包括用于产生用于半导体晶片处理的掺杂剂离子的离子源的装置耦合到远程等离子体源，其将F或Cl离子递送到第一离子源，以清除第一离子源和提取电极中的沉积物。这些方法和装置在运行诸如升华蒸汽源的可冷凝进料气体时能够延长设备正常运行时间，并且特别适用于所谓的冷离子源。描述了使用十硼烷和十八碳烷烃作为原料的长设备正常运行时间以及当使用气化的元素砷和磷时能够延长设备运行时间的方法和装置，并且其用于增强离子注入期间的束稳定性。

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