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    • 1. 发明申请
    • APPARATUS AND METHOD FOR PHASE CHANGE MEMORY DRIFT MANAGEMENT
    • 相位变化管理的设备和方法
    • WO2013095385A1
    • 2013-06-27
    • PCT/US2011/066179
    • 2011-12-20
    • INTEL CORPORATIONRAMANUJAN, Raj K.SCHMISSEUR, Mark A.
    • RAMANUJAN, Raj K.SCHMISSEUR, Mark A.
    • G11C13/02G06F12/00
    • G06F12/0246G06F12/0866G06F2212/214G11C13/0004G11C13/004G11C13/0061G11C16/3418G11C2013/0054G11C2013/0057
    • A system and method are described for selecting a demarcation voltage for read and write operations. Embodiments of the invention provide a scheme to use multiple VDMs to cover the case where power-on drift is different from power-off drift of the PCMS cells. The controller automatically manages this through tracking refreshes and writes. In addition, the embodiments of the invention provide an efficient scheme to reduce the performance impact of the penalty box following a write by tracking recent write addresses through a hash-table or similar scheme. By way of example, a method in accordance with one embodiment comprises: detecting a read operation directed to a first block of a PCMS memory; determining whether a write operation has previously occurred to the first block within a specified amount of time prior to the read operation; using a first demarcation voltage (VDM) for the read operation if the write operation has previously occurred to the first block within the specified amount of time prior to the write operation; and using a second VDM for the read operation if the write operation has not previously occurred to the first block within the specified amount of time prior to the write or refresh operation.
    • 描述了用于选择用于读取和写入操作的分界电压的系统和方法。 本发明的实施例提供了使用多个VDM来覆盖上电漂移与PCMS单元的断电漂移不同的情况的方案。 控制器通过跟踪刷新和写入自动进行管理。 此外,本发明的实施例提供了一种有效的方案,以通过通过散列表或类似方案跟踪最近的写入地址来减少写入之后的惩罚盒的性能影响。 作为示例,根据一个实施例的方法包括:检测针对PCMS存储器的第一块的读取操作; 在所述读取操作之前的指定时间内确定是否先前对所述第一块发生了写入操作; 如果在写操作之前的指定时间内先前已经对第一块发生写操作,则使用第一分界电压(VDM)作为读操作; 以及如果在所述写入或刷新操作之前的所述指定时间量内的所述第一块以前没有发生写入操作,则使用第二VDM进行所述读取​​操作。