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1. 发明申请

WO1996034393A1 SEMICONDUCTOR STORAGE DEVICE, AND METHOD AND SYSTEM FOR MODULATING PULSE USED FOR THE DEVICE 审中-公开
标题翻译：半导体存储器件，以及用于调制用于器件的脉冲的方法和系统
公开(公告)号：WO1996034393A1
公开(公告)日：1996-10-31
申请号：PCT/JP1996000972
申请日：1996-04-09
申请人： HITACHI, LTD. , AOKI, Masakazu , SHIMOHIGASHI, Katsuhiro , YAMAKIDO, Kazuo , OISHI, Kanji , SATO, Katsuyuki , YANAGISAWA, Kazumasa , HORIGUCHI, Masashi , SAKATA, Takeshi , SEKIGUCHI, Tomonori
发明人： HITACHI, LTD.
IPC分类号： G11C11/407
CPC分类号： G11C7/1018 , G11C7/1072
摘要： A semiconductor storage device is provided with an address input circuit to which a row address signal is inputted synchronously with a row address strobe signal and a column address signal is inputted synchronously with a column address strobe signal, a memory array in which a plurality of dynamic memory cells are arranged in a matrix and address selection is performed in units of bits based on the address signal inputted through the address input circuit, a modulation circuit which pulse-modulates the data read out in the units of a plurality of bits by using the column address strobe signal as a reference signal, or a clock signal as the reference clock in the case of a synchronous dynamic RAM, and a demodulation circuit which demodulates the inputted pulse-modulated write signals. Therefore, the access speed to a memory can be substantially increased by inputting/outputting a large amount of data through pulse modulation while the input/ouput interface of an existing dynamic RAM or synchronous dynamic RAM is used as it is.
摘要翻译：半导体存储装置具有与行地址选通信号同步地输入行地址信号的地址输入电路，列列地址信号与列地址选通信号同步输入;存储器阵列，其中多个动态存储单元被布置成矩阵，并且基于通过地址输入电路输入的地址信号以位为单位执行地址选择;调制电路，其通过使用多个位以单位为单位读出的数据进行脉冲调制列地址选通信号作为参考信号，或时钟信号作为同步动态RAM的情况下的基准时钟，解调电路对输入的脉冲调制写入信号进行解调。因此，当现有的动态RAM或同步动态RAM的输入/输出接口原样使用时，通过脉冲调制输入/输出大量的数据可以大大提高对存储器的访问速度。

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