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    • 1. 发明申请
    • INFRARED RADIATION MODULATING DEVICE
    • 红外辐射调制装置
    • WO1997011402A1
    • 1997-03-27
    • PCT/GB1996002221
    • 1996-09-09
    • THE SECRETARY OF STATE FOR DEFENCERUTT, Harvey, NicholasMANNING, Paul, AntonyDONOHUE, Paul, Peter
    • THE SECRETARY OF STATE FOR DEFENCE
    • G02F01/015
    • G01J5/08G01J5/0834G01J2005/0077G02F1/0126G02F1/015G02F2001/0156
    • A non-mechanical modulating device for use in infrared detection. The device is of particular use in the 8-14 mu m range and has application in thermal imaging cameras and gas sensing systems. The modulator comprises a germanium element and a means of varying the carrier concentration. In particular, the variation of the hole concentration gives rise to the absorption of infrared radiation due to interband transitions between the light and heavy hole bands in the split valence band in germanium. The variation in hole concentration may be initiated in any convenient way, for example, by the irradiation of the germanium with visible or near infrared light, by the electrical injection of free carriers across a germanium diode structure or by electron impact on the germanium surface following acceleration under vacuum. In the case where the variation in carrier concentration is initiated by optical means, the surface of the germanium is treated so as to produce a low surface recombination velocity.
    • 用于红外检测的非机械调制装置。 该装置在8-14微米范围内特别有用,并可用于热成像相机和气体传感系统。 调制器包括锗元素和改变载流子浓度的方法。 特别地,空穴浓度的变化导致由于锗中的分裂价带中的光和重空穴带之间的带间跃迁而导致的红外辐射的吸收。 空穴浓度的变化可以以任何方便的方式启动,例如通过用可见光或近红外光照射锗,通过电子注入锗二极管结构的自由载流子或通过电子轰击锗表面上的锗表面 真空加速。 在通过光学装置引发载流子浓度的变化的情况下,处理锗的表面以产生低的表面复合速度。