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    • 1. 发明申请
    • A METHOD FOR MAKING A NANO-STAMP AND FOR FORMING, WITH THE STAMP, NANO-SIZE ELEMENTS ON A SUBSTRATE
    • 用于制造纳米印章并形成印章的方法,基底上的纳米尺寸元素
    • WO2003084863A1
    • 2003-10-16
    • PCT/US2002/010020
    • 2002-04-01
    • PECHENIK, Alexander
    • PECHENIK, Alexander
    • B82B3/00
    • G03F7/0002B82Y10/00B82Y40/00Y10S977/887
    • The stamping process and a method of fabrication of nano-stamps with characteristic dimensions below 1 nm and up to 0.1 micron, which is used in making patterns of the dimensions same as those of the nano-stamp on surface of a substrate. In the process a very hard stamp is fabricated by first depositing alternating layers of two different materials (α & β), one of which has very high hardness, on a sacrificial substrate via PVD, CVD or any other deposition process that produces alternating layers of selected thickness of sub 1 nm to above 100 nm. The layered film (α & β) is then polished to atomically smooth finish perpendicular to the plane of the layers and etched to produce dips (40) in the softer layer and elevation (50) in the harder layer and forming a nano-stamp, which can be used as a mold to stamp out patterns on a substrate of lower hardness than the hardness of the elevated layers (50). The substrate can be stamped twice with turning of the stamp 90 degrees between first and second stampings, a square pattern of hills and valleys are formed, which can be used for magnetic memory storage by subsequently sputtering a magnetic material on the tops of the elevations or hills.
    • 冲压工艺和制造具有小于1nm且高达0.1微米的特征尺寸的纳米标记的方法,其用于制造尺寸与衬底表面上的纳米压印尺寸相同的图案。 在该过程中,通过首先在牺牲基板上经由PVD,CVD或任何其它沉积工艺沉积两种不同材料(α和β)的交替层,其中一种具有非常高的硬度, 选择的1nm至100nm以下的厚度。 然后将层状膜(α&β)抛光成垂直于层平面的原子光滑整理剂,并被蚀刻以在较硬层中产生浸渍(40)并在较硬层中产生高度(50)并形成纳米印模, 其可以用作模具以将硬度比升高的层(50)的硬度更低的基板上的图案压印。 可以在第一和第二冲压件之间转动印模90度冲压基板两次,形成一个正方形的丘陵和谷形图形,其可以通过随后在磁​​场顶部上溅射磁性材料而用于磁存储器存储,或 丘陵。