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1. 发明申请

WO2010033659A1 CVD REACTOR WITH MULTIPLE PROCESSING LEVELS AND DUAL-AXIS MOTORIZED LIFT MECHANISM 审中-公开
标题翻译：具有多种加工水平和双轴电动机构的CVD反应器
公开(公告)号：WO2010033659A1
公开(公告)日：2010-03-25
申请号：PCT/US2009/057252
申请日：2009-09-17
申请人： APPLIED MATERIALS, INC. , COLLINS, Richard O. , MYO, Nyi Oo , BAUTISTA, Kevin J. , WEBB, John S. , SANCHEZ, Errol C. , HUANG, Yi-Chiau , PATALAY, Kailash Kiran , ZHOU, Zhi Yuan , YU, Wilson
发明人： COLLINS, Richard O. , MYO, Nyi Oo , BAUTISTA, Kevin J. , WEBB, John S. , SANCHEZ, Errol C. , HUANG, Yi-Chiau , PATALAY, Kailash Kiran , ZHOU, Zhi Yuan , YU, Wilson
IPC分类号： H01L21/205
CPC分类号： H01L21/67115 , C23C16/45551 , H01L21/68742 , H01L21/68792
摘要： An apparatus for processing a substrate, comprising a processing chamber and a substrate support and lift pin assembly disposed within the chamber. The substrate support and lift pin assembly are coupled to a lift mechanism that controls positioning of the substrate support and the lift pins and provides rotation for the substrate support. The lift mechanism includes at least one sensor capable of generating a signal when clearance between the substrate support and the lift pins allows rotation of the substrate support to begin. The substrate support capable of concurrent axial motion and rotation may be used in a processing chamber comprising multiple processing zones separated by edge rings. Substrates may be subjected to successive or cyclical processes by moving between the multiple processing zones.
摘要翻译：一种用于处理衬底的装置，包括处理室和设置在腔室内的衬底支撑件和提升销组件。基板支撑和提升销组件联接到升降机构，该提升机构控制基板支撑件和升降销的定位并提供用于基板支撑件的旋转。提升机构包括至少一个能够在基板支撑件和提升销之间的间隙处产生信号的传感器，允许基板支撑件的旋转开始。能够同时进行轴向运动和旋转的基板支撑件可用于包括由边缘环分开的多个处理区域的处理室。可以通过在多个处理区之间移动来对衬底进行连续或循环过程。

2. 发明申请

WO2008063980A3 INDEPENDENT RADIANT GAS PREHEATING FOR PRECURSOR DISASSOCIATION CONTROL AND GAS REACTION KINETICS IN LOW TEMPERATURE CVD SYSTEMS 审中-公开
标题翻译：独立的放射性气体预加热用于低温CVD系统中的前驱物分配控制和气体反应动力学
公开(公告)号：WO2008063980A3
公开(公告)日：2008-08-07
申请号：PCT/US2007084482
申请日：2007-11-13
申请人： APPLIED MATERIALS INC , CARLSON DAVID KEITH , KUPPURAO SATHEESH , BECKFORD HOWARD , DINIZ HERMAN , PATALAY KAILASH KIRAN , BURROWS BRIAN HAYES , CAMPBELL JEFFREY RONALD , ZHU ZOUMING , LI XIAOWEI , SANCHEZ ERROL ANTONIO
发明人： CARLSON DAVID KEITH , KUPPURAO SATHEESH , BECKFORD HOWARD , DINIZ HERMAN , PATALAY KAILASH KIRAN , BURROWS BRIAN HAYES , CAMPBELL JEFFREY RONALD , ZHU ZOUMING , LI XIAOWEI , SANCHEZ ERROL ANTONIO
IPC分类号： C23F1/00
CPC分类号： C23C16/455 , C23C16/22 , C23C16/452 , H01L21/02532 , H01L21/0262 , Y10T137/0318
摘要： A method and apparatus for delivering precursor materials to a processing chamber is described. The apparatus includes a gas distribution assembly having multiple gas delivery zones. Each zone may include a plenum having an inlet for receiving a precursor gas and at least one source of non-thermal energy, such as an infrared light source. The at least one source of non-thermal energy is may be varied to control the intensity of wavelengths from the infrared light source.
摘要翻译：描述了将前体材料输送到处理室的方法和装置。该装置包括具有多个气体输送区的气体分配组件。每个区域可以包括具有用于接收前体气体的入口和至少一个非热能源的诸如红外光源的气室。可以改变至少一个非热能源，以控制来自红外光源的波长的强度。

3. 发明申请

WO2008063980A2 INDEPENDENT RADIANT GAS PREHEATING FOR PRECURSOR DISASSOCIATION CONTROL AND GAS REACTION KINETICS IN LOW TEMPERATURE CVD SYSTEMS 审中-公开
标题翻译：独立辐射气体预热技术在低温CVD系统中的前驱体脱离控制和气体反应动力学
公开(公告)号：WO2008063980A2
公开(公告)日：2008-05-29
申请号：PCT/US2007/084482
申请日：2007-11-13
申请人： APPLIED MATERIALS, INC. , CARLSON, David Keith , KUPPURAO, Satheesh , BECKFORD, Howard , DINIZ, Herman , PATALAY, Kailash Kiran , BURROWS, Brian Hayes , CAMPBELL, Jeffrey Ronald , ZHU, Zouming , LI, Xiaowei , SANCHEZ, Errol Antonio
发明人： CARLSON, David Keith , KUPPURAO, Satheesh , BECKFORD, Howard , DINIZ, Herman , PATALAY, Kailash Kiran , BURROWS, Brian Hayes , CAMPBELL, Jeffrey Ronald , ZHU, Zouming , LI, Xiaowei , SANCHEZ, Errol Antonio
IPC分类号： F25B29/00
CPC分类号： C23C16/455 , C23C16/22 , C23C16/452 , H01L21/02532 , H01L21/0262 , Y10T137/0318
摘要： A method and apparatus for delivering precursor materials to a processing chamber is described. The apparatus includes a gas distribution assembly having multiple gas delivery zones. Each zone may include a plenum having an inlet for receiving a precursor gas and at least one source of non-thermal energy, such as an infrared light source. The at least one source of non-thermal energy is may be varied to control the intensity of wavelengths from the infrared light source.
摘要翻译：描述了用于将前体材料输送到处理室的方法和设备。该设备包括具有多个气体输送区域的气体分配组件。每个区域可以包括具有用于接收前体气体的入口和至少一个非热能源（例如红外光源）的充气室。至少一个非热能源可以改变以控制来自红外光源的波长的强度。

4. 发明申请

WO2010059300A3 PYROMETRY FOR SUBSTRATE PROCESSING 审中-公开
标题翻译：用于基板处理的PYROMETRY
公开(公告)号：WO2010059300A3
公开(公告)日：2010-07-22
申请号：PCT/US2009059857
申请日：2009-10-07
申请人： APPLIED MATERIALS INC , PATALAY KAILASH KIRAN , HUNTER AARON MUIR , ADAMS BRUCE E
发明人： PATALAY KAILASH KIRAN , HUNTER AARON MUIR , ADAMS BRUCE E
IPC分类号： H01L21/00 , H01L21/02 , H01L21/324
CPC分类号： H01L21/67248
摘要： A substrate processing system includes a processing chamber, a pedestal for supporting a substrate disposed within the processing chamber, and an optical pyrometry assembly coupled to the processing chamber to measure an emitted light originating substantially from a portion of the pedestal or substrate. The optical pyrometry assembly further includes a light receiver, and an optical detector. The optical pyrometry assembly receives a portion of the emitted light, and a temperature of the substrate is determined from an intensity of the portion of the emitted light near at least one wavelength. A method of measuring a temperature of a substrate during processing, includes disposing a light pipe near a portion of the pedestal supporting the substrate or pedestal, shielding the end of the light pipe from stray light so that the end of the light pipe receives light from the portion of the pedestal or substrate, purging the end of the light pipe with a gas to reduce contamination of the end of the light pipe, detecting a portion of the light emitted from the pedestal and received by the light pipe, and determining a temperature of the substrate from the intensity of the portion of the emitted light from the pedestal or the substrate near at least one wavelength.
摘要翻译：基板处理系统包括处理室，用于支撑设置在处理室内的基板的基座和耦合到处理室的光学高温测量组件，以测量基本上从基座或基板的一部分发出的发射光。光学高温测量组件还包括光接收器和光学检测器。光学高温测量组件接收一部分发射的光，并且基于发射光的部分的强度在至少一个波长附近确定。一种在处理过程中测量基板的温度的方法，包括在支撑基板或基座的基座的一部分附近设置光管，将光管的端部遮蔽于杂散光，使得光管的端部接收来自基座或基板的部分，用气体吹扫光管的端部，以减少光管的端部的污染，检测从基座发射并由光管接收的光的一部分，并且确定温度从基板或基板的发射光的部分的强度接近至少一个波长。

5. 发明申请

WO2010059300A2 PYROMETRY FOR SUBSTRATE PROCESSING 审中-公开
标题翻译：用于基板加工的色温
公开(公告)号：WO2010059300A2
公开(公告)日：2010-05-27
申请号：PCT/US2009/059857
申请日：2009-10-07
申请人： APPLIED MATERIALS, INC. , PATALAY, Kailash Kiran , HUNTER, Aaron Muir , ADAMS, Bruce E.
发明人： PATALAY, Kailash Kiran , HUNTER, Aaron Muir , ADAMS, Bruce E.
IPC分类号： H01L21/00 , H01L21/02 , H01L21/324
CPC分类号： H01L21/67248
摘要： A substrate processing system includes a processing chamber, a pedestal for supporting a substrate disposed within the processing chamber, and an optical pyrometry assembly coupled to the processing chamber to measure an emitted light originating substantially from a portion of the pedestal or substrate. The optical pyrometry assembly further includes a light receiver, and an optical detector. The optical pyrometry assembly receives a portion of the emitted light, and a temperature of the substrate is determined from an intensity of the portion of the emitted light near at least one wavelength. A method of measuring a temperature of a substrate during processing, includes disposing a light pipe near a portion of the pedestal supporting the substrate or pedestal, shielding the end of the light pipe from stray light so that the end of the light pipe receives light from the portion of the pedestal or substrate, purging the end of the light pipe with a gas to reduce contamination of the end of the light pipe, detecting a portion of the light emitted from the pedestal and received by the light pipe, and determining a temperature of the substrate from the intensity of the portion of the emitted light from the pedestal or the substrate near at least one wavelength.
摘要翻译：基板处理系统包括处理腔室，用于支撑设置在处理腔室内的基板的基座以及耦合到处理腔室的光学高温测定组件，以测量基本上源自一部分的发射光基座或基板。光学高温测定组件还包括光接收器和光学检测器。光学高温测定组件接收一部分发射光，并且基于至少一个波长附近的发射光部分的强度来确定衬底的温度。在处理期间测量基板的温度的方法包括在支撑基板或基座的基座的一部分附近布置光管，将光管的端部屏蔽以避免杂散光，从而使得光管的端部接收来自基座或基板的该部分，用气体吹扫光管的端部以减少光管端部的污染，检测从基座发射并由光管接收的一部分光，并且确定温度从基座或基板发出的光的至少一个波长附近的部分的强度确定基板的厚度。

6. 发明申请

WO2009045947A1 WAFER PROCESSING HARDWARE FOR EPITAXIAL DEPOSITION WITH REDUCED BACKSIDE DEPOSITION AND DEFECTS 审中-公开
标题翻译：具有减少背面沉积和缺陷的外延沉积的加工硬化处理
公开(公告)号：WO2009045947A1
公开(公告)日：2009-04-09
申请号：PCT/US2008/078085
申请日：2008-09-29
申请人： APPLIED MATERIALS, INC. , PATALAY, Kailash Kiran , METZNER, Craig , VATUS, Jean
发明人： PATALAY, Kailash Kiran , METZNER, Craig , VATUS, Jean
IPC分类号： C23C16/00
CPC分类号： C23C16/4585 , C23C16/45521 , H01L21/68728 , H01L21/68735
摘要： Methods and apparatus for reducing autodoping and backside defects on a substrate during epitaxial deposition processes are provided herein. In some embodiments, an apparatus for reducing autodoping and backside defects on a substrate includes a substrate support ring having a substrate holder structure configured to support the substrate in a position for processing along an edge defined by the backside of the substrate and a sidewall of the substrate or along a plurality of discrete points on or proximate to the edge; and a spacer ring for positioning the substrate support ring above a susceptor plate to define a substrate gap region between the susceptor plate and the backside of the substrate, the spacer ring comprising a plurality of openings formed therethrough that facilitate passage of a gas into and out of the substrate gap region.
摘要翻译：本文提供了在外延沉积工艺期间减少衬底上自动掺杂和背面缺陷的方法和装置。在一些实施例中，用于减少衬底上的自动掺杂和背面缺陷的装置包括衬底支撑环，衬底支撑环具有衬底保持器结构，该衬底支撑结构构造成将衬底支撑在沿着由衬底背面限定的边缘处理的位置，衬底或沿着边缘上或附近的多个离散点; 以及间隔环，用于将衬底支撑环定位在基座板上方以限定基座板和衬底背面之间的衬底间隙区域，间隔环包括穿过其中形成的多个开口，其有助于气体进入和离开的衬底间隙区域。

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