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    • 8. 发明申请
    • GLASS-BASED SOI STRUCTURES
    • 基于玻璃的SOI结构
    • WO2005029576A2
    • 2005-03-31
    • PCT/US2004004746
    • 2004-02-17
    • CORNING INCCOUILLARD JAMES GMACH JOSEPH FGADKAREE KISHOR P
    • COUILLARD JAMES GMACH JOSEPH FGADKAREE KISHOR P
    • H01L21/20H01L21/30H01L21/46H01L21/762
    • H01L21/76254H01L21/2007
    • Semiconductor-on-insulator (SOI) structures, including large area SOI structures, are provided which have one or more regions composed of a layer (15) of a substantially single-crystal semiconductor (e.g., doped silicon) attached to a support substrate (20) composed of an oxide glass or an oxide glass-ceramic. The oxide glass or oxide glass-ceramic is preferably transparent and preferably has a strain point of less than 1000°C, a resistivity at 250°C that is less than or equal to 1016 -cm, and contains positive ions (e.g., alkali or alkaline-earth ions) which can move within the glass or glass-ceramic in response to an electric field at elevated temperatures (e.g., 300-1000°C). The bond strength between the semiconductor layer (15) and the support substrate (20) is preferably at least 8 joules/meter2. The semiconductor layer (15) can include a hybrid region (16) in which the semiconductor material has reacted with oxygen ions originating from the glass or glass-ceramic. The support substrate (20) preferably includes a depletion region (23) which has a reduced concentration of the mobile positive ions.
    • 提供了包括大面积SOI结构的绝缘体上半导体(SOI)结构,其具有一个或多个由连接到支撑衬底的基本上单晶半导体(例如,掺杂硅)的层(15)组成的区域 20)由氧化物玻璃或氧化物玻璃陶瓷构成。 氧化物玻璃或氧化物玻璃 - 陶瓷优选是透明的,并且优选具有小于1000℃的应变点,250℃下的电阻率小于或等于1016cm,并且包含正离子(例如碱或 碱土离子),其可以响应于在升高的温度(例如,300-1000℃)下的电场而在玻璃或玻璃陶瓷内移动。 半导体层(15)和支撑衬底(20)之间的结合强度优选为至少8焦耳/米2。 半导体层(15)可以包括混合区域(16),其中半导体材料已经与源自玻璃或玻璃陶瓷的氧离子反应。 支撑衬底(20)优选地包括具有降低的可移动正离子浓度的耗尽区(23)。