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    • 4. 发明申请
    • FLIP-CHIP LIGHT EMITTING DIODES AND METHOD OF MANUFACTURING THEREOF
    • 闪光二极管发光二极管及其制造方法
    • WO2006006822A1
    • 2006-01-19
    • PCT/KR2005/002245
    • 2005-07-12
    • GWANGJU INSTITUTE OF SCIENCE AND TECHNOLOGYSEONG, Tae-YeonSONG, June-OKIM, Kyoung-KookHONG, Woong-Ki
    • SEONG, Tae-YeonSONG, June-OKIM, Kyoung-KookHONG, Woong-Ki
    • H01L33/00
    • H01L33/405H01L33/32
    • Provided are a flip-chip nitride-based light emitting device having an n-type clad layer, an active layer and a p-type clad layer sequentially stacked thereon, comprising a reflective layer formed on the p-type clad layer and at least one transparent conductive thin film layer made up of transparent conductive materials capable of inhibiting diffusion of materials constituting the reflective layer, interposed between the p-type clad layer and reflective layer; and a process for preparing the same. In accordance with the flip-chip nitride-based light emitting device of the present invention and a process for preparing the same, there are provided advantages such as improved ohmic contact properties with the p-type clad layer, leading to increased wire bonding efficiency and yield upon packaging the light emitting device, capability to improve luminous efficiency and life span of the device due to low specific contact resistance and excellent current- voltage properties.
    • 提供了一种倒装芯片氮化物基发光器件,其具有依次层叠在其上的n型覆盖层,有源层和p型覆盖层,包括形成在p型覆盖层上的反射层和至少一个 透明导电薄膜层,其由能够抑制构成反射层的材料的扩散的透明导电材料构成,插入在p型覆盖层和反射层之间; 及其制备方法。 根据本发明的倒装氮化物基发光器件及其制备方法,提供了与p型覆盖层的欧姆接触特性提高的优点,从而提高引线接合效率, 在封装发光器件时产生的能量,由于低比接触电阻和优异的电流 - 电压特性,能够提高器件的发光效率和寿命。