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1. 发明申请

WO2009121876A1 MOVABLE ELECTRICAL CONDUCTOR 审中-公开
标题翻译：可移动电导体
公开(公告)号：WO2009121876A1
公开(公告)日：2009-10-08
申请号：PCT/EP2009/053806
申请日：2009-03-31
申请人： ABB RESEARCH LTD , Hartmann, Samuel , Trüssel, Dominik
发明人： Hartmann, Samuel , Trüssel, Dominik
IPC分类号： H01L23/48 , H01L23/498
CPC分类号： H01L24/37 , H01L23/49811 , H01L2924/01006 , H01L2924/01033 , H01L2924/01082 , H01L2924/014 , H01L2924/1305 , H01L2924/13055 , H01L2924/15787 , H01L2924/00
摘要： An electrical conductor (1) comprises a primary electrical contact (2) and at least one secondary electrical contact (3) and a connection element (4), which electrically connects the first and the at least one secondary electrical contacts (2, 3) and which comprises at least one plate-like region (41). Each plate-like region (41) comprises at least one deflection means (44) with at least one first and at least one second pivot (452, 452', 452", 462; 462', 462"), wherein the first and second pivots (452, 452', 452", 462; 462', 462") of each deflection means (44) are arranged such that each secondary electrical contact (3) is movable relative to the primary electrical contact (2) in a deflection direction (43), without creation of a shear force.
摘要翻译：电导体（1）包括主电触点（2）和至少一个次电触点（3）和连接元件（4），其将第一和第二次电触头（2,3）电连接，并且其包括至少一个板状区域（41）。每个板状区域（41）包括至少一个具有至少一个第一和至少一个第二枢轴（452,452'，452“，462; 462'，462”）的偏转装置（44），其中第一和每个偏转装置（44）的第二枢轴（452,452'，452“，462; 462'，462”）被布置成使得每个次级电触头（3）可相对于初级电触头（2）在一个偏转方向（43），而不产生剪切力。

2. 发明申请

WO2012049087A3 SEMICONDUCTOR MODULE AND METHOD OF MANUFACTURING A SEMICONDUCTOR MODULE 审中-公开
标题翻译：半导体模块和制造半导体模块的方法
公开(公告)号：WO2012049087A3
公开(公告)日：2012-06-21
申请号：PCT/EP2011067558
申请日：2011-10-07
申请人： ABB RESEARCH LTD , SCHULZ NICOLA , HARTMANN SAMUEL
发明人： SCHULZ NICOLA , HARTMANN SAMUEL
IPC分类号： H01L21/60 , H01L23/00 , H01L23/498 , H01L23/538 , H05K1/11 , H05K3/32
CPC分类号： H01L23/49517 , H01L23/24 , H01L23/49822 , H01L23/49838 , H01L23/5383 , H01L23/5386 , H01L24/32 , H01L24/45 , H01L24/48 , H01L24/73 , H01L24/80 , H01L25/072 , H01L2224/32225 , H01L2224/45124 , H01L2224/48091 , H01L2224/48137 , H01L2224/48227 , H01L2224/48472 , H01L2224/73265 , H01L2924/01013 , H01L2924/01078 , H01L2924/01079 , H01L2924/1203 , H01L2924/1305 , H01L2924/13055 , H01L2924/1306 , H01L2924/13091 , H01L2924/14 , H01L2924/15787 , H01L2924/19107 , H05K1/11 , H05K3/328 , H05K2201/09745 , H05K2203/049 , H01L2924/00014 , H01L2924/00012 , H01L2924/00
摘要： The present invention relates to a semiconductor module (10), comprising a substrate (24), in particular formed of a ceramic insulator, and at least one metallic layer (26), in particular formed on the substrate (24), wherein the metallic layer (26) comprises a deepening (40) for placing and fixing a contact element (16), the contact element (16) being at least partially "L"-shaped and comprising a first arm (34) for fixing the contact element (16) at the deepening (40), and a second arm (36) for interconnecting the contact element (16), wherein the deepening (40) has a horizontal dimension which is about = 0,5mm bigger than the horizontal dimension of the contact element (16). Semiconductor modules (10) according to the invention exhibit improved reliability and are furthermore producible in a highly reproducible manner.
摘要翻译：本发明涉及一种半导体模块（10），该半导体模块（10）包括尤其由陶瓷绝缘体形成的衬底（24）以及特别地形成在衬底（24）上的至少一个金属层（26），其中金属（26）包括用于放置和固定接触元件（16）的加深部（40），所述接触元件（16）至少部分地为“L”形并且包括用于固定所述接触元件（16）的第一臂（34）（40）处的第一臂（36）和用于使所述接触元件（16）互连的第二臂（36），其中所述加深部（40）具有比所述接触部的水平尺寸大大约0.5mm的水平尺寸元素（16）。根据本发明的半导体模块（10）表现出改进的可靠性并且还可以以高度可重现的方式生产。

3. 发明申请

WO2011067288A1 SYSTEM AND METHOD FOR CONTROLLING AT LEAST TWO POWER SEMICONDUCTORS CONNECTED IN PARALLEL 审中-公开
标题翻译：用于控制并联连接的最小二功率半导体的系统和方法
公开(公告)号：WO2011067288A1
公开(公告)日：2011-06-09
申请号：PCT/EP2010/068637
申请日：2010-12-01
申请人： ABB TECHNOLOGY AG , KLAKA, Sven , HARTMANN, Samuel
发明人： KLAKA, Sven , HARTMANN, Samuel
IPC分类号： H03K17/06 , H03K17/12
CPC分类号： H03K17/127 , H02M1/088 , H02M2001/325 , H03K17/06
摘要： The system according to the invention comprises at least two power semiconductor chips (1, 2, 3, 4) being connected in parallel and comprising each a gate terminal for switching the power semiconductor chip (1, 2, 3, 4) in a blocking- state by a first gate voltage and for switching the power semiconductor chip (1, 2, 3, 4) in a conducting- state by a second gate voltage. The system comprises further a control means (16, 57) adapted for applying the first or the second gate voltage to the gate terminals of the at least two power semiconductor chips (1, 2, 3, 4). The control means (16) is adapted for applying a third gate voltage to the gate terminal of the at least one remaining power semiconductor chip (1, 2, 3, 4) when a power semiconductor chip (1, 2, 3, 4) fails, and that the third gate voltage is higher than the second gate voltage.
摘要翻译：根据本发明的系统包括并联连接的至少两个功率半导体芯片（1,2,3,4），每个功率半导体芯片包括用于将功率半导体芯片（1,2,3,4）封闭的栅极端子 - 通过第一栅极电压状态，并且用于通过第二栅极电压将导通状态的功率半导体芯片（1,2,3,4）切换。该系统还包括适于将第一或第二栅极电压施加到至少两个功率半导体芯片（1,2,3,4）的栅极端子的控制装置（16,57）。控制装置（16）适于在功率半导体芯片（1,2,3,4）的功率半导体芯片（1,2,3,4）上施加第三栅极电压至所述至少一个剩余功率半导体芯片（1,2,3,4）的栅极端子，并且第三栅极电压高于第二栅极电压。

4. 发明申请

WO2012049087A2 SEMICONDUCTOR MODULE AND METHOD OF MANUFACTURING A SEMICONDUCTOR MODULE 审中-公开
标题翻译：半导体模块和制造半导体模块的方法
公开(公告)号：WO2012049087A2
公开(公告)日：2012-04-19
申请号：PCT/EP2011/067558
申请日：2011-10-07
申请人： ABB RESEARCH LTD , SCHULZ, Nicola , HARTMANN, Samuel
发明人： SCHULZ, Nicola , HARTMANN, Samuel
IPC分类号： H01L23/00
CPC分类号： H01L23/49517 , H01L23/24 , H01L23/49822 , H01L23/49838 , H01L23/5383 , H01L23/5386 , H01L24/32 , H01L24/45 , H01L24/48 , H01L24/73 , H01L24/80 , H01L25/072 , H01L2224/32225 , H01L2224/45124 , H01L2224/48091 , H01L2224/48137 , H01L2224/48227 , H01L2224/48472 , H01L2224/73265 , H01L2924/01013 , H01L2924/01078 , H01L2924/01079 , H01L2924/1203 , H01L2924/1305 , H01L2924/13055 , H01L2924/1306 , H01L2924/13091 , H01L2924/14 , H01L2924/15787 , H01L2924/19107 , H05K1/11 , H05K3/328 , H05K2201/09745 , H05K2203/049 , H01L2924/00014 , H01L2924/00012 , H01L2924/00
摘要： The present invention relates to a semiconductor module (10), comprising a substrate (24), in particular formed of a ceramic insulator, and at least one metallic layer (26), in particular formed on the substrate (24), wherein the metallic layer (26) comprises a deepening (40) for placing and fixing a contact element (16), the contact element (16) being at least partially "L"-shaped and comprising a first arm (34) for fixing the contact element (16) at the deepening (40), and a second arm (36) for interconnecting the contact element (16), wherein the deepening (40) has a horizontal dimension which is about ≤ 0,5mm bigger than the horizontal dimension of the contact element (16). Semiconductor modules (10) according to the invention exhibit improved reliability and are furthermore producible in a highly reproducible manner.
摘要翻译：本发明涉及一种半导体模块（10），其包括特别由陶瓷绝缘体形成的衬底（24），以及特别形成在衬底（24）上的至少一个金属层（26），其中金属层（26）包括用于放置和固定接触元件（16）的加深（40），所述接触元件（16）至少部分地为“L”形并且包括用于固定接触元件的第一臂（34） 16），以及用于互连接触元件（16）的第二臂（36），其中所述加深件（40）的水平尺寸比接触件的水平尺寸大约= 0.5mm 元件（16）。根据本发明的半导体模块（10）表现出改进的可靠性，并且还可以以高度可重复的方式生产。

5. 发明申请

WO2011036307A1 CIRCUIT ARRANGEMENT AND MANUFACTURING METHOD THEREOF 审中-公开
标题翻译：电路布置及其制造方法
公开(公告)号：WO2011036307A1
公开(公告)日：2011-03-31
申请号：PCT/EP2010/064377
申请日：2010-09-28
申请人： ABB TECHNOLOGY AG , SCHULZ, Nicola , HARTMANN, Samuel
发明人： SCHULZ, Nicola , HARTMANN, Samuel
IPC分类号： H01L25/07 , H01L23/00
CPC分类号： H01L24/01 , H01L23/4985 , H01L24/37 , H01L24/40 , H01L24/48 , H01L24/49 , H01L24/73 , H01L25/072 , H01L25/18 , H01L2224/37599 , H01L2224/40137 , H01L2224/40139 , H01L2224/48091 , H01L2224/48195 , H01L2224/48229 , H01L2224/4846 , H01L2224/49111 , H01L2224/49175 , H01L2224/73219 , H01L2224/73221 , H01L2924/00014 , H01L2924/01006 , H01L2924/01013 , H01L2924/0102 , H01L2924/01023 , H01L2924/01029 , H01L2924/01033 , H01L2924/01042 , H01L2924/01047 , H01L2924/01078 , H01L2924/01082 , H01L2924/014 , H01L2924/1305 , H01L2924/13055 , H01L2924/15787 , H01L2924/19107 , H01L2924/30107 , H01L2924/00 , H01L2224/45099 , H01L2224/05599 , H01L2224/37099
摘要： The invention relates to a circuit arrangement (10) in which a power functional device (16) and a conductor element (18) are mounted, the arrangement (10) comprising a substrate (12), a wiring layer (14) provided on the substrate (12) and electrically connected to the functional device (16) and to the conductor element (18) and an intermediate electric contact device, which is mounted on the wiring layer (14) to provide on the side opposite to the wiring layer a contact region for contacting the conductor element (18). According to the invention the conductor element (18) is contacting the intermediate electric contact device in the contact region which is opposite to an area, in which the electric contact device is fixed to the wiring layer. The invention further relates to a corresponding manufacturing method of a circuit arrangement.
摘要翻译：本发明涉及一种其中安装了功率功能器件（16）和导体元件（18）的电路装置（10），该装置（10）包括一个衬底（12），一个布线层（14）基板（12）并与功能元件（16）和导体元件（18）电连接，并且中间电接点器件安装在布线层（14）上以在与布线层（a）相对的一侧接触区域用于接触导体元件（18）。根据本发明，导体元件（18）使接触区域中的中间电接触器件与电接触器件固定到布线层的区域相对。本发明还涉及电路装置的相应制造方法。

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