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1. 发明申请

WO2013055410A1 N-DOPING OF ORGANIC SEMICONDUCTORS BY BIS-METALLOSANDWICH COMPOUNDS 审中-公开
标题翻译：有机半导体通过双金属化合物进行N掺杂
公开(公告)号：WO2013055410A1
公开(公告)日：2013-04-18
申请号：PCT/US2012/042287
申请日：2012-06-13
申请人： GEORGIA TECH RESEARCH CORPORATION , THE TRUSTEES OF PRINCETON UNIVERSITY , BARLOW, Stephen , QI, Yabing , KAHN, Antoine , MARDER, Seth , KIM, Sang Bok , MOHAPATRA, Swagat K. , GUO, Song
发明人： BARLOW, Stephen , QI, Yabing , KAHN, Antoine , MARDER, Seth , KIM, Sang Bok , MOHAPATRA, Swagat K. , GUO, Song
IPC分类号： H01L51/00
CPC分类号： H01L51/009 , H01L51/0002 , H01L51/002 , H01L51/0083 , H01L51/0084 , H01L51/0085 , H01L51/0086 , Y02E10/549
摘要： The various inventions disclosed, described, and/or claimed herein relate to the field of methods for n-doping organic semiconductors with certain bis-metallosandwich compounds, the doped compositions produced, and the uses of the doped compositions in organic electronic devices. Metals can be manganese, rhenium, iron, ruthenium, osmium, rhodium, or iridium. Stable and efficient doping can be achieved.
摘要翻译：本文公开，描述和/或要求保护的各种发明涉及具有某些双金属化合物的n掺杂有机半导体的方法领域，所产生的掺杂组合物以及掺杂组合物在有机电子器件中的用途。金属可以是锰，铼，铁，钌，锇，铑或铱。可以实现稳定高效的掺杂。

2. 发明申请

WO2013055410A9 N-DOPING OF ORGANIC SEMICONDUCTORS BY BIS-METALLOSANDWICH COMPOUNDS 审中-公开
标题翻译：双金属硅化合物对有机半导体的N掺杂
公开(公告)号：WO2013055410A9
公开(公告)日：2013-07-11
申请号：PCT/US2012042287
申请日：2012-06-13
申请人： GEORGIA TECH RES INST , UNIV PRINCETON , BARLOW STEPHEN , QI YABING , KAHN ANTOINE , MARDER SETH , KIM SANG BOK , MOHAPATRA SWAGAT K , GUO SONG
发明人： BARLOW STEPHEN , QI YABING , KAHN ANTOINE , MARDER SETH , KIM SANG BOK , MOHAPATRA SWAGAT K , GUO SONG
IPC分类号： H01L51/00
CPC分类号： H01L51/009 , H01L51/0002 , H01L51/002 , H01L51/0083 , H01L51/0084 , H01L51/0085 , H01L51/0086 , Y02E10/549
摘要： The various inventions disclosed, described, and/or claimed herein relate to the field of methods for n-doping organic semiconductors with certain bis-metallosandwich compounds, the doped compositions produced, and the uses of the doped compositions in organic electronic devices. Metals can be manganese, rhenium, iron, ruthenium, osmium, rhodium, or iridium. Stable and efficient doping can be achieved.
摘要翻译：本文公开，描述和/或要求保护的各种发明涉及用某些双金属三角形化合物对有机半导体进行n掺杂，所制备的掺杂组合物以及掺杂组合物在有机电子器件中的用途的方法领域。金属可以是锰，铼，铁，钌，锇，铑或铱。稳定和有效的兴奋剂可以实现。

3. 发明申请

WO1996041932A1 METHOD OF ROOF CONTROL IN AN UNDERGROUND MINE 审中-公开
标题翻译：地下矿山屋顶控制方法
公开(公告)号：WO1996041932A1
公开(公告)日：1996-12-27
申请号：PCT/US1996009803
申请日：1996-06-07
申请人： JENNMAR CORPORATION , STANKUS, John, C. , GUO, Song
发明人： JENNMAR CORPORATION
IPC分类号： E21D21/00
CPC分类号： E21F17/185 , E21C39/00 , E21D9/14 , E21D20/00
摘要： Stresses in an underground mine are determined by analyzing mechanical properties of mine site stratum (Figure 1, numerals 2, 4, 6 and 8) including orthotropic properties of at least one of Young's modules and Poisson's ratio. The mechanical properties of the mine site are combined with a physical layout of the mine that includes one or more of an entry and a pillar arrangement formed in a stratum of material being mined (Figure 1, numeral 10). The physical layout may also include an array of roof bolts in a roof of the mine. A finite element analysis (FEA) (Figure 2) is performed on the combined mechanical properties and physical layout to obtain a stress analysis of the mine site. The stress analysis is analyzed to determine if the layout of the mine is sufficient to provide a desired degree of support while maximizing the removal of material being mined. If the desired degree of support is not provided, the physical layout and/or the array of roof bolts is adjusted and subsequent FEA performed until the desired degree of support is provided.
摘要翻译：通过分析矿场地层的机械性能（图1，数字2,4,6和8）来确定地下矿井的应力，包括至少一个杨氏模量和泊松比的正交各向异性。矿场的机械性能与矿井的物理布局相结合，其中包括形成在开采材料层（图1，数字10）中的一个或多个入口和柱状排列。物理布局还可以包括在矿山屋顶中的一系列屋顶螺栓。对组合的机械性能和物理布局进行有限元分析（FEA）（图2），以获得矿场的应力分析。分析应力分析，以确定矿山的布局是否足以提供所需的支撑度，同时最大限度地移除被开采的材料。如果没有提供所需的支撑程度，则调整车身螺栓的物理布局和/或阵列，并进行后续的有限元分析，直到提供所需的支撑度。

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