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    • 1. 发明申请
    • ELECTROCHEMICALLY DRIVEN MONOLITHIC MICROFLUIDIC SYSTEMS
    • 电化学驱动单晶微流体系统
    • WO2003046256A1
    • 2003-06-05
    • PCT/US2002/038056
    • 2002-11-26
    • THE RESEARCH FOUNDATION OF STATE UNIVERSITY OF NEW YORKHUA, Zonglu, SusanCHOPRA, Harsh, DeepSACHS, Frederick
    • HUA, Zonglu, SusanCHOPRA, Harsh, DeepSACHS, Frederick
    • C25B1/00
    • F16K99/0001F15C5/00F16K99/0019F16K99/0042F16K2099/0074F16K2099/008F16K2099/0084
    • A microfluidic system and method, suitable for "lab-on-a-chip" applications, by which a bubble is inflated in fluid flowing through a microfluidic channel at a predetermined location along the channel and the bubble is maintained at that location to stop flow through the channel in the manner of a valve. The microfluidic channel is formed on a semiconductor chip and a pair of electrodes is formed one on each side of the channel, whereby a bubble is electrochemically inflated between the electrodes and held in fixed position by the channel wall when a voltage is applied across the fluid incident to connecting the electrodes to a voltage source. When the voltage is removed, deflation of the bubble valve rapidly occurs to restore flow. The present invention provides flow control in a microfluidic system regardless of channel cross-sectional geometry and with no moving parts and low power consumption. Moreover, the present invention may be practiced using existing fabrication techniques.
    • 适用于“芯片实验室”应用的微流体系统和方法,通过该微流体系统和方法,气体在沿着通道的预定位置流过微流体通道的流体中膨胀,气泡保持在该位置以停止流动 通过通道以阀的方式。 微流体通道形成在半导体芯片上,并且一对电极形成在通道的每一侧上,从而在电极之间电化学膨胀气泡,并且当跨过流体施加电压时通过通道壁将其保持在固定位置 将电极连接到电压源的事件。 当去除电压时,快速发生气泡阀的放气以恢复流量。 本发明提供微流体系统中的流量控制,而不管通道截面几何形状如何,并且没有移动部件和低功耗。 此外,本发明可以使用现有的制造技术来实施。
    • 3. 发明申请
    • SELECTIVELY CONDUCTIVE STRUCTURE
    • 选择性导电结构
    • WO2006089040A3
    • 2009-04-16
    • PCT/US2006005503
    • 2006-02-16
    • UNIV NEW YORK STATE RES FOUNDCHOPRA HARSH DEEPHUA ZONGLUSULLIVAN MATTHEW RARMSTRONG JASON N
    • CHOPRA HARSH DEEPHUA ZONGLUSULLIVAN MATTHEW RARMSTRONG JASON N
    • G01R33/02G01R33/12
    • G01R33/093B82Y25/00G01R33/09
    • The invention includes a conductor (13) with a first side (16) and a second side (19). The conductor (13) may be sized to have a cros section diameter substantially similar to a Fermi wavelength of electrons in the conductor, the cross-section diameter being taken substantially perpendicular to a primary direction in which current could flow (28) through the conductor (13). The conductor size be selected so that when a magnetic field less than a threshold value is applied to the conductor (13), the first side (16) of the conductor has a first magnetic state and the second side (19) of the conductor has a second magnetic state. However, when a magnetic field of sufficient strength is applied to the magnetic conductor (13) the first side (16) and the second side (19) will be caused to have the same magnetic state. The material of the conductor (13) may be selected from those for which magnetoresistance magnitude of the material oscillates as a function of the material's cross-sectional area, and the cross-sectional area of the conductor may be selected to correspond to a peak of the function.
    • 本发明包括具有第一侧(16)和第二侧(19)的导体(13)。 导体(13)的尺寸可以具有与导体中的电子的费米波长基本相似的交叉截面直径,其截面直径基本上垂直于电流可通过导体(28)流动的主要方向(28) (13)。 选择导体尺寸,使得当小于阈值的磁场被施加到导体(13)时,导体的第一侧(16)具有第一磁状态,并且导体的第二侧(19)具有 第二磁状态。 然而,当对磁导体(13)施加足够强度的磁场时,使第一侧(16)和第二侧(19)具有相同的磁状态。 导体(13)的材料可以选自材料的磁阻大小作为材料的横截面积的函数振荡的材料,并且导体的横截面面积可以被选择为对应于 功能。
    • 6. 发明申请
    • SELECTIVELY CONDUCTIVE STRUCTURE
    • 选择性导电结构
    • WO2006089040A2
    • 2006-08-24
    • PCT/US2006/005503
    • 2006-02-16
    • THE RESEARCH FOUNDATION OF STATE UNIVERSITY OF NEW YORK AT BUFFALOCHOPRA, Harsh, DeepHUA, ZongluSULLIVAN, Matthew, R.ARMSTRONG, Jason, N.
    • CHOPRA, Harsh, DeepHUA, ZongluSULLIVAN, Matthew, R.ARMSTRONG, Jason, N.
    • G01R1/067
    • G01R33/093B82Y25/00G01R33/09
    • The invention includes a conductor with a first side and a second side. The conductor may be sized to have a cross-section diameter substantially similar to a Fermi wavelength of electrons in the conductor, the cross-section diameter being taken substantially perpendicular to a primary direction in which current could flow through the conductor. The conductor size may be selected so that when a magnetic field less than a threshold value is applied to the conductor, the first side of the conductor has a first magnetic state and the second side of the conductor has a second magnetic state. However, when a magnetic field of sufficient strength is applied to the magnetic conductor the first side and the second side will be caused to have the same magnetic state. The material of the conductor may be selected from those for which magnetoresistance magnitude of the material oscillates as a function of the material's cross-sectional area, and the cross-sectional area of the conductor may be selected to correspond to a peak of the function.
    • 本发明包括具有第一侧和第二侧的导体。 导体的尺寸可以具有与导体中的电子的费米波长基本相似的截面直径,其截面直径基本上垂直于电流可以流过导体的主要方向。 可以选择导体尺寸,使得当将小于阈值的磁场施加到导体时,导体的第一侧具有第一磁状态,并且导体的第二侧具有第二磁状态。 然而,当对磁导体施加足够强度的磁场时,将使第一侧和第二侧具有相同的磁状态。 导体的材料可以选自材料的磁阻大小作为材料的横截面积的函数振荡的材料,并且可以选择导体的横截面面积以对应于功能的峰值。